公开(公告)号：US20010019934A1

公开(公告)日：2001-09-06

申请号：US09044146

申请日：1998-03-19

Inventor： MATSUOMI NISHIMURA ,  OSAMU IKEDA ,  SATOSHI OHTA ,  SHINZO UCHIYAMA

IPC: B24B049/00 ,  B24B051/00 ,  B24B029/00

CPC classification number: B24B57/02 ,  B24B37/04 ,  B24B41/047 ,  B24B49/00

Abstract: The present invention provides a polishing apparatus comprising a holding means for holding a polished body with a polished surface thereof facing upwardly, and a polishing head for holding a polishing pad having a polishing surface having an area smaller than an area of the polished surface while contacting the polishing pad with the polished surface and for rotating the polishing pad around its rotation axis, and wherein the polishing head is provided with a drive means for revolving the polishing pad around a revolution axis, and the revolution axis and the rotation axis are positioned so that a distance between the revolution axis and the rotation axis becomes smaller than a radius of the polishing pad.

Abstract translation: 本发明提供了一种抛光装置，包括：保持装置，用于保持其抛光表面朝上的抛光体;以及抛光头，用于保持具有抛光表面的抛光垫，该抛光垫的面积小于抛光表面的面积，同时接触 所述抛光垫具有抛光表面并用于围绕其旋转轴线旋转抛光垫，并且其中所述抛光头设置有用于使所述抛光垫围绕旋转轴线旋转的驱动装置，并且所述旋转轴线和所述旋转轴线被定位成 旋转轴和旋转轴之间的距离变得小于抛光垫的半径。

公开(公告)号：US20010016466A1

公开(公告)日：2001-08-23

申请号：US09838298

申请日：2001-04-18

Inventor： Gurtej S. Sandhu ,  Trung Tri Doan

IPC: B24B049/00 ,  B24B001/00 ,  B24B051/00

CPC classification number: B24B37/107 ,  B23Q15/013 ,  B23Q15/12 ,  B24B13/015 ,  B24B37/013 ,  B24B37/015 ,  B24B37/12 ,  B24B37/205 ,  B24B49/003 ,  B24B49/02 ,  B24B49/04 ,  B24B49/10 ,  B24B49/12 ,  B24B57/02 ,  G05B19/404 ,  G05B2219/34403 ,  G05B2219/37398 ,  G05B2219/37602 ,  G05B2219/45026 ,  G05B2219/45199 ,  G05B2219/45232 ,  G05B2219/49052 ,  G05B2219/49057

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

公开(公告)号：US20010003083A1

公开(公告)日：2001-06-07

申请号：US09741462

申请日：2000-12-19

Inventor： Douglas J. Roberts ,  Jonathan Dooley ,  Lawrence Wolfson ,  Michael J. Goulet ,  Jeffrey Murray

IPC: B24B051/00

CPC classification number: B24B13/01 ,  B24D13/142 ,  Y10S451/913 ,  Y10S451/921

Abstract: A retainer for retaining an abrasive pad on a lens making machine and an abrasive pad adapted to such retention comprises a retainer nestable with a lap of a lens making machine wherein when such retainer is nested, a pad placed upon said lap before nesting will be trapped in the desired position. The pad of the invention includes radially outwardly extending members beyond the working area of the pad whose purpose is to be trapped by the retainer. The invention enables automatic loading and unloading of pads on the lens making machine.

Abstract translation: 用于将研磨垫保持在镜片制造机上的保持器和适于这种保持的研磨垫包括可与镜片制造机的一圈嵌套的保持器，其中当这种保持器嵌套时，在嵌套之前放置在所述搭接部上的垫将被捕获 在所需的位置。 本发明的垫包括超出垫的工作区域的径向向外延伸的构件，其目的是被保持器夹住。 本发明能够自动装载和卸载镜片制造机上的垫。

公开(公告)号：US20040242123A1

公开(公告)日：2004-12-02

申请号：US10869719

申请日：2004-06-15

Applicant: Applied Materials, Inc.

Inventor： Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00 ,  B24B007/19

CPC classification number: G01B11/06 ,  B24B37/04 ,  B24B49/12 ,  B24D7/12 ,  G01B9/02021 ,  G01B9/02027

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract translation: 在化学机械抛光期间原位测量基底上的层的厚度。 光束通过抛光垫中的窗口分割，并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。 监测由反射离开衬底的光束产生的干涉信号，并且从干扰信号中提取多个强度测量值。 每个强度测量对应于穿过衬底表面的路径中的采样区域。 对于每个采样区域确定径向位置，并且根据径向位置将强度测量值分成多个径向范围。 从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

公开(公告)号：US20040214508A1

公开(公告)日：2004-10-28

申请号：US10674373

申请日：2003-09-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Yehiel Gotkis

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B1/005 ,  B24B37/013 ,  B24B49/105 ,  B24B57/02 ,  H01L21/67253

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. A head capable of being positioned at a proximate location over a polishing pad includes an input and an output defined in the head. The input is capable of delivering a fluid at the proximate location on the surface of a polishing pad. The output being oriented adjacent to the input is capable of removing at least part of the fluid delivered onto the surface of the polishing pad. A method for controlling properties of a film over a polishing pad surface is also provided.

Abstract translation: 提供了一种用于化学机械平面化（CMP）系统的设备。 能够定位在抛光垫上方的邻近位置的头部包括限定在头部中的输入和输出。 该输入能够在抛光垫的表面上的邻近位置输送流体。 靠近输入端定向的输出能够去除输送到抛光垫表面上的至少一部分流体。 还提供了一种用于控制抛光垫表面上的膜的性质的方法。

公开(公告)号：US20040209551A1

公开(公告)日：2004-10-21

申请号：US10830567

申请日：2004-04-23

Applicant: Toho Engineering Kabushiki Kaisha

Inventor： Tatsutoshi Suzuki

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B37/26 ,  B23B27/04 ,  B23B2210/02 ,  B23B2210/022 ,  B23B2220/12 ,  B23B2251/50 ,  B23C5/08 ,  B23C5/10 ,  B23Q1/52 ,  B23Q16/04 ,  B24D18/00 ,  Y10T29/49995 ,  Y10T29/5168 ,  Y10T82/10 ,  Y10T83/0304 ,  Y10T407/2202 ,  Y10T407/2206 ,  Y10T407/2208 ,  Y10T407/23 ,  Y10T407/25

Abstract: Disclosed is a turning tool for cutting circumferential grooves into a surface of a polishing pad formed of a resin material and utilized for polishing semiconductor devices. The turning tool comprising a cutting part arranged to have a tooth width within a range of 0.005-1.0 mm, a wedge angle within a range of 15-35 degrees, and a front clearance angle within a range of 65-45 degrees. A polishing pad effectively formed by using the turning tool, and an apparatus and a method of producing such a polishing pad by utilizing the turning tool are also disclosed.

公开(公告)号：US20040209550A1

公开(公告)日：2004-10-21

申请号：US10829593

申请日：2004-04-21

Inventor： In Kwon Jeong

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00 ,  B24B007/19

CPC classification number: B24B37/345 ,  B24B51/00

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more polishing surfaces, multiple wafer carriers and at least one load-and-unload cup. The load-and-unload cup may be configured to move to and from the wafer carriers in a pivoting manner. The load-and-unload cup may be configured to move to and from the wafer carriers in a linear reciprocating manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a pivoting manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a linear reciprocating manner.

Abstract translation: 用于抛光诸如半导体晶片的物体的装置和方法利用一个或多个抛光表面，多个晶片载体和至少一个装载和卸载杯。 负载和卸载杯可以被配置成以枢转方式移动到晶片载体和从晶片载体移动。 负载和卸载杯可以被配置为以线性往复运动方式移动到晶片载体和从晶片载体移动。 晶片载体可以构造成以枢转的方式移动到和从装载和卸载杯移动。 晶片载体可以被配置成以线性往复运动的方式移动到装载和卸载杯中和从其卸载。

公开(公告)号：US20040209546A1

公开(公告)日：2004-10-21

申请号：US10823167

申请日：2004-04-13

Applicant: Fujitsu Limited

Inventor： Teruaki Nishioka ,  Kazuo Yokoi ,  Yoshiaki Yanagida ,  Shunsuke Sone

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/005 ,  B24B37/048 ,  B24B49/00 ,  B24B51/00

Abstract: A lapping machine comprises a lapping surface plate (1) rotated by a rotating mechanism, a lapping jig (28) having a plurality of projections to bottom surfaces of which a work (30) to be lapped by a lapping surface on the lapping surface plate (1) is fitted, amount-of-projection adjusting elements (29) for adjusting the variation of the plurality of projections (28c) to the lapping surface plate (1) individually, and a control circuit (36) for outputting variation-of-projection control signals to the variation-of-projection adjusting elements (29).

Abstract translation: 研磨机包括由旋转机构旋转的研磨表面板（1），具有多个突起到底面的研磨夹具（28），研磨表面板上的研磨表面上的研磨表面研磨的工件（30） （1）配置有用于分别调整多个突起（28c）与研磨表面板（1）的变化量的投影量调节元件（29），以及用于输出变化的控制电路（36） - 投影控制信号到投影变化调整元件（29）。

公开(公告)号：US20040192171A1

公开(公告)日：2004-09-30

申请号：US10809523

申请日：2004-03-26

Applicant: HOYA CORPORATION

Inventor： Kesahiro Koike

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B49/00 ,  B24B37/042 ,  G03F1/60

Abstract: A method of producing a glass substrate for a mask blank has the steps of measuring a convex/concave profile of a surface of the glass substrate, controlling a flatness of the surface of the glass substrate to a value not greater than a predetermined reference value by specifying the degree of convexity of a convex portion present on the surface of the glass substrate with reference to a result of measurement obtained in the profile measuring step and executing local machining upon the convex portion under a machining condition depending upon the degree of convexity, and polishing, after the flatness control step, the surface of the glass substrate subjected to the local machining by the action of a machining liquid interposed between the surface of the glass substrate and a surface of a polishing tool without direct contact therebetween.

Abstract translation: 制造掩模坯料用玻璃基板的方法具有以下步骤：测量玻璃基板的表面的凸/凹形轮廓，将玻璃基板的表面的平坦度控制为不大于预定基准值的值，由 参照在轮廓测量步骤中获得的测量结果指定存在于玻璃基板表面上的凸部的凸度，并根据凸度在加工条件下对凸部进行局部加工，以及 在平坦度控制步骤之后，通过介于玻璃基板的表面和抛光工具的表面之间的机械液体的作用进行局部加工的玻璃基板的表面，而不会直接接触。

公开(公告)号：US20040192168A1

公开(公告)日：2004-09-30

申请号：US10480807

申请日：2004-05-14

Inventor： Peter Faustmann ,  Walter Glashauser ,  Andreas Purath ,  Benno Utess

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B53/017 ,  B24B49/02 ,  B24B49/16

Abstract: An in-situ measurement of thickness profiles of polishing pads (1) used in chemical mechanical polishing (CMP) is enabled by arranging sensors (7) for measuring distances together with a conditioner (6). The sensors (7) are provided as e.g. laser sensors (7a-c) performing an indirect measurement from a calibrated height level above the pad (1) surface or as e.g. laser (7a-c) or ultrasonic sensors (7e) performing a direct thickness measurement from the pad surface to the pad-platen contact surface. A thickness profile (10) is obtained by co-moving the sensor (7a, 7b) with the conditioner (6) during conditioning or by leading a sensor (7c) along a guide-rail (14) above the pad surface (1) with e.g. a constant distance. A reference distance measurement to the polishing platen (2) can be achieved by a second sensor (7d) mounted at a position, where there is no pad on the platen (2), e.g. a hole the edge. Using the arrangement a disadvantageous thickness profile (10) with a steep slope resulting in polishing inhomogeneities affecting semiconductor device (4) surfaces can be detected and a warning signal be issued. A destructing micrometer measurement is not necessary, thus prolonging the pad (1) lifetime and increasing the device yield.

Abstract translation: 化学机械抛光（CMP）中使用的抛光垫（1）的厚度分布的原位测量能够通过布置与调节器（6）一起测量距离的传感器（7）来实现。 传感器（7）例如被提供。 激光传感器（7a-c）从垫（1）表面上方的校准高度水平执行间接测量。 激光器（7a-c）或超声波传感器（7e），其执行从焊盘表面到焊盘 - 台板接触表面的直接厚度测量。 通过在调节期间将传感器（7a，7b）与调节器（6）共同移动或通过沿着垫表面（1）上方的导轨（14）引导传感器（7c）来获得厚度轮廓（10） 与例如 恒定的距离。 可以通过安装在压板（2）上没有垫的位置处的第二传感器（7d）来实现对抛光台板（2）的参考距离测量。 一个洞的边缘。 使用该布置可以检测到具有影响半导体器件（4）表面的抛光不均匀性的陡峭斜率的不利厚度分布（10），并且发出警告信号。 不需要进行破坏性千分尺测量，从而延长焊盘（1）的寿命并提高器件的产量。