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    Low profile wideband antenna
    133.
    发明授权
    Low profile wideband antenna 有权

    公开(公告)号：US10944176B2

    公开(公告)日：2021-03-09

    申请号：US16089352

    申请日：2017-03-28

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

    Inventor： Yugang Ma ,  Pankaj Sharma ,  Ser Wah Oh

    IPC: H01Q9/40 ,  H01Q1/48 ,  H01Q9/42 ,  H01Q13/16

    Abstract: A low-profile wideband monopole antenna is provided. The antenna may include a radiating element configured in a bent monopole arrangement to provide a vertical polarization such that an omni-directional radiating characteristic is achieved. The radiating element may include a plurality of slots formed at or edged from each side of the radiating element to increase the effective current path length of the radiating element. The antenna may include a feed and a feeding structure extending from the radiating element to the feed. The antenna may further include a ground plane. The radiating element may be arranged substantially parallel to the ground plane. The surface area of the radiating element may be smaller than the ground plane.

    OPTICAL DEVICE, GAS SENSOR, METHODS OF FORMING AND OPERATING THE SAME
    134.
    发明申请
    OPTICAL DEVICE, GAS SENSOR, METHODS OF FORMING AND OPERATING THE SAME 有权

    公开(公告)号：US20210063658A1

    公开(公告)日：2021-03-04

    申请号：US16961011

    申请日：2019-01-16

    Applicant: Agency for Science, Technology and Research

    Inventor： Lennon Yao Ting Lee ,  Lionel You Liang Wong ,  Alex Yuandong Gu

    IPC: G02B6/42 ,  G01N21/3504

    Abstract: Various embodiments may relate to an optical device. The device may include an elongate substrate, an emitter portion at a distal end portion of the elongate substrate, the emitter portion configured to emit light, and an actuator portion at a proximal end portion of the elongate substrate opposite the distal end portion of the elongate substrate. The emitter portion may include a first electrode, a second electrode, and an active layer between the first electrode and the second electrode so that the light is emitted due to an increase in a temperature of the active layer upon application of a first potential difference between the first electrode and the second electrode. The active layer may be patterned to form a photonic crystal layer for enhancing directionality of the emitted light.

    Memory cell, memory array, method of forming and operating memory cell
    136.
    发明授权
    Memory cell, memory array, method of forming and operating memory cell 有权

    公开(公告)号：US10923648B2

    公开(公告)日：2021-02-16

    申请号：US16478195

    申请日：2018-01-17

    Applicant: Agency for Science, Technology and Research

    Inventor： Karim Ali Abdeltawwab Ahmed ,  Sunny Yan Hwee Lua ,  Fei Li

    IPC: G11C11/00 ,  H01L43/02 ,  G11C11/16 ,  G11C11/56 ,  H01F10/32 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

    Abstract: Various embodiments may relate to a memory cell. The memory cell may include a first cell electrode, a first insulator layer and a first magnetic free layer between the first cell electrode and the first insulator layer. The memory cell may also include a second cell electrode, a second insulator layer, and a second magnetic free layer between the second cell electrode and the second insulator layer. A magnetic pinned layer may be between the first insulator layer and the second insulator layer. A direction of magnetization of the first magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the first cell electrode. A direction of magnetization of the second magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the second cell electrode.

    METHOD AND SYSTEM FOR GENERATING A KECCAK MESSAGE AUTHENTICATION CODE (KMAC) BASED ON WHITE-BOX IMPLEMENTATION
    137.
    发明申请
    METHOD AND SYSTEM FOR GENERATING A KECCAK MESSAGE AUTHENTICATION CODE (KMAC) BASED ON WHITE-BOX IMPLEMENTATION 有权

    公开(公告)号：US20210036864A1

    公开(公告)日：2021-02-04

    申请号：US17042548

    申请日：2019-03-29

    Applicant: Agency for Science, Technology and Research

    Inventor： Jiqiang Lu ,  Huaqun Guo

    IPC: H04L9/32 ,  H04L9/06 ,  H04L9/00

    Abstract: There is provided a method of generating a Keccak message authentication code (KMAC) based on white-box implementation, using at least one processor. The method includes: obtaining a white-box implementation of a round function of a KMAC algorithm; receiving an input message; obtaining a plurality of message blocks based on the input message; and for each of the plurality of message blocks at a plurality of iterations, respectively: modifying a current state of the KMAC algorithm based on the message block to produce a modified current state of the KMAC algorithm; inputting the modified current state to a state transformation function including the white-box implementation of the round function; and executing the white-box implementation of the round function based on the modified current state to obtain an updated state of the KMAC algorithm as an output of the state transformation function. In particular, the modified current state inputted to the state transformation function and the updated state outputted from the state transformation function are each white-box protected based on a same set of white-box operations. There is also provided a corresponding system for generating a KMAC based on white-box implementation.

    MEMORY CELL AND METHOD OF FORMING THE SAME
    140.
    发明申请
    MEMORY CELL AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210013407A1

    公开(公告)日：2021-01-14

    申请号：US16977411

    申请日：2019-03-08

    Applicant: Agency for Science, Technology and Research ,  National University of Singapore

    Inventor： Wen Xiao ,  Wendong Song ,  Jun Ding ,  Ernult Franck Gerard

    IPC: H01L45/00

    Abstract: Various embodiments may provide a memory cell. The memory cell may include an active electrode including an active electrode material. The memory cell may also include a first noble electrode contact with the active electrode, the first noble electrode being a patterned electrode including a noble electrode material. The memory cell may further include a resistive switching layer in contact with the active electrode and the first noble electrode. The memory cell may additionally include a second noble electrode including a noble electrode material, the second noble electrode in contact with the resistive switching layer.

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