Abstract:
A semiconductor package includes a wire board, a plurality of semiconductor chips configured to be stacked over the wire board and to be electrically coupled with the wire board, and at least one shielding unit configured to be formed between the plurality of semiconductor chips and to be maintained at a predetermined voltage.
Abstract:
A method of fabricating an organic electroluminescent device (OELD) according to the present invention has steps of repairing a pixel region by irradiating a laser on a drain contact hole of a passivation layer in a pixel region in need of the repair; and disabling the connection between an organic electroluminescent diode and a drain electrode of a driving thin film transistor (TFT), where the pixel region of the OELD has i) the driving TFT comprising the drain electrode, ii) the passivation layer covering the driving TFT, while comprising the drain contact hole exposing the drain electrode of the driving TFT, and iii) the organic electroluminescent diode connected to the drain electrode of the driving TFT via the drain contact hole.
Abstract:
A semiconductor integrated circuit can include a first voltage pad, a second voltage pad, and a voltage stabilizing unit that is connected between the first voltage pad and the second voltage pad. The first voltage pad can be connected to a first internal circuit, and the second voltage pad can be connected to a second internal circuit.
Abstract:
A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.
Abstract:
A thermoelectric material including: a nanostructure; a discontinuous area disposed in the nanostructure, and an uneven portion disposed on the nano structure.
Abstract:
A method and a system for providing a Wireless Fidelity (Wi-Fi) service, in which when multiple counterpart devices are selected based on manufacturer information and support information on supported functions and capability defined in a service information field of each beacon message or each probe response message, a final device is determined by checking multiple pieces of signal information of the selected counterpart devices, are provided. The method includes receiving messages from multiple counterpart devices, selecting one or more counterpart devices, each of which supports a requested service, from an identical manufacturer when the messages are received, checking multiple pieces of signal information of the selected counterpart devices when the number of the selected counterpart devices is greater than one, and determining a device having the signal information satisfying set conditions as a final device.
Abstract:
A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.
Abstract:
An OLED device and a method for fabricating the same are disclosed, capable of improving yield and preventing decomposition of organic layers by moisture. An organic passivation layer having excellent morphology is applied to prevent a short circuit between an anode electrode and a cathode electrode. A Ca layer is applied to remove moisture from the inside of the device, thereby increasing the lifespan of the device. Accordingly, generation of dark sports by the short circuit caused by protrusions on a poor-morphology layer can be prevented. In addition, moisture absorbent layers are formed between the passivation layers and the partitions to remove outside moisture and the moisture outgassed from the inside, that is, partitions and organic layers, thereby elongating the lifespan of the OLED device.
Abstract:
Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.
Abstract:
Provided are an active node, and a system and method of transmitting contents using the active node. When contents to be transmitted from a contents server to a terminal are received, resource information of the terminal is identified, the contents transmitted from the contents server are transformed into a pertinent format to the terminal based on the resource information, information included in a header of the contents is transformed into information about the transformed contents and is transmitted to the terminal, thereby reducing load according to contents transformation of a contents server.