摘要:
A semiconductor device includes a wafer comprising a chip that passes a test and a chip that does not pass a test, one or more first stacked chips that are stacked over the chip that passes a test, and one or more second stacked chips that are stacked over the chip that does not pass a test, wherein the second stacked chips comprise at least one between an chip that does not pass a test and a dummy chip.
摘要:
An integrated circuit for controlling data output impedance includes an address decoder, a selection signal decoder, and a transfer control unit. The address decoder is configured to decode an address signal and generate a selection mode signal and a first adjustment mode signal. The selection signal decoder is configured to decode a selection signal and generate an enable signal and a disable signal. The transfer control unit is configured to transfer a pull-up signal and a pull-down signal as a selection pull-up signal and a selection pull-down signal.
摘要:
A semiconductor memory apparatus includes a data bus inversion (DBI) section configured to receive a plurality of input data and decide whether to invert or output, without an inversion, the plurality of input data depending upon logic levels of the plurality of data, and further configured to generate a plurality of inversion data based on the decision; and a data output section configured to receive the plurality of inversion data, invert or output, without an inversion the plurality of inversion data in response to a mode signal, and generate a plurality of output data.
摘要:
A digital-to-analogue converting circuit includes a driver leg having a plurality of resistance elements between a power supply voltage terminal and a ground voltage terminal, wherein at least one of the plurality of resistance elements is a variable resistor, and a code level changing unit for outputting a level-changed code to a control terminal of the variable resistor based on an activation of a digital code, wherein the level-changed code is produced by converting a level of the digital code.
摘要:
Provided is directed to a circuit for controlling data and a data strobe driver in a semiconductor memory device, including: a first delay unit for outputting a data signal with a variable delay; a DQ driver for outputting a data signal according to the data signal passed through the first delay unit and a driver select signal; a second delay unit for outputting a data strobe signal with a variable delay; and a DQS driver for outputting the data strobe signal passed through the second delay unit by being driven according to the driver select signal.
摘要:
An apparatus for generating a reference voltage of a semiconductor integrated circuit includes a resistance control unit that adjusts at least one an adjustment code such that at least one set of resistors, which have resistances determined according to the at least one adjustment code have predetermined resistances, a voltage level control unit that generates a selection code for selecting the level of a final reference voltage under external control and outputs the generated selection code, and a reference voltage generating unit that converts a power supply voltage according to the adjustment code and the selection code and outputs the final reference voltage.
摘要:
Disclosed is an internal voltage generator, which includes a detecting means for detecting a level of an internal voltage, an oscillator for generating a driving pulse signal in response to an output signal of the detecting means, a first driving unit for outputting a first pulse signal after receiving the driving pulse signal, a second driving unit for outputting a second pulse signal after receiving the driving pulse signal, and a pumping unit for changing a potential level of the internal voltage after selectively receiving one of the first pulse signal and the second pulse signal.
摘要:
A circuit for controlling driver strengths of a data and a data strobe in a semiconductor device comprising: a control signal generating unit which generates a first control signal in response to a first address code, generates a second control signal in response to a second address code, and generates a third control signal in response to a third address code; a data driver strength control unit which is selected in response to the first control signal, controls a driver strength of an input data in response to the second control signal, and finely adjusts the driver strength of the input data in response to the third control signal; and a data strobe driver strength control unit which is selected in response to the first control signal, controls a driver strength of an input data strobe in response to the second control signal, and finely adjusts the driver strength of the input data strobe in response to the third control signal.
摘要:
A synchronous memory device is capable of reducing the number of address pins by changing address input. The synchronous memory device includes at least one common pin receiving a first signal and a second signal, latch circuits coupled to the common pin, wherein the latch circuit latches the first and second signals and one of the latch circuits selectively outputs the first or second signal in response to first or second internal clock pulses, and a clock pulse generator for receiving an external clock signal and for producing the first and second internal clock pulses from the external clock signal.
摘要:
A semiconductor integrated circuit can include a first voltage pad, a second voltage pad, and a voltage stabilizing unit that is connected between the first voltage pad and the second voltage pad. The first voltage pad can be connected to a first internal circuit, and the second voltage pad can be connected to a second internal circuit.