公开(公告)号：US06524620B2

公开(公告)日：2003-02-25

申请号：US09119323

申请日：1998-07-20

Applicant: Chih-Ming Chen ,  Xiu Xiu Cheng ,  Steve Jan

Inventor： Chih-Ming Chen ,  Xiu Xiu Cheng ,  Steve Jan

IPC: A61K952

CPC classification number: A61K9/5078 ,  A61K9/5084 ,  A61K31/554 ,  Y10S514/97

Abstract: A controlled release diltiazem dosage formulation comprising a plurality of active pellets coated with an extended release coating wherein the active pellets contain diltiazem or a pharmaceutically acceptable salt, a pharmaceutically acceptable inert seed and a binder and the extended release coating contains a water insoluble water permeable polymer, a channeling agent, a lubricant and optionally a surfactant. A single batch intermittent method of manufacturing a heterogeneous population of extended release pellets for use as a dosage formulation is also disclosed.

Abstract translation: 一种受控释放的地尔硫卓剂量制剂，其包含涂覆有延长释放包衣的多个活性粒剂，其中活性丸剂含有地尔硫卓或其药学上可接受的盐，药学上可接受的惰性种子和粘合剂，并且延长释放包衣含有水不溶性水可渗透聚合物 沟道剂，润滑剂和任选的表面活性剂。 还公开了制造用作剂量制剂的不同种群的延长释放丸剂的单批次间歇方法。

公开(公告)号：US06495162B2

公开(公告)日：2002-12-17

申请号：US10016556

申请日：2001-11-01

Applicant: Xiu Xiu Cheng ,  Chih-Ming Chen ,  Steve Jan ,  Joseph Chou

Inventor： Xiu Xiu Cheng ,  Chih-Ming Chen ,  Steve Jan ,  Joseph Chou

IPC: A61K920

CPC classification number: A61K9/2866 ,  A61K9/0004 ,  A61K9/2072 ,  A61K9/282 ,  A61K9/2886 ,  A61K31/155

Abstract: A controlled release antihyperglycemic tablet that does not contain an expanding polymer and comprising a core containing the antihyperglycemic drug, a semipermeable membrane coating the core and at least one passageway in the membrane.

Abstract translation: 一种不含膨胀聚合物并包含含有抗高血糖药物的核心的控释抗高血糖药片，包被芯的半透膜和膜中的至少一个通道。

公开(公告)号：US06261906B1

公开(公告)日：2001-07-17

申请号：US09365733

申请日：1999-08-03

Applicant: Cheng-Yuan Hsu ,  Chih-Ming Chen

Inventor： Cheng-Yuan Hsu ,  Chih-Ming Chen

IPC: H01L21336

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/7883

Abstract: The method for forming a flash memory cell mainly includes the steps as follows. At first, a semiconductor substrate having isolation regions thereon and having a well region provided between the isolation regions is provided. A tunnel oxide layer is formed on the well region and a first silicon layer is formed over the substrate. A dielectric layer is formed on the first silicon layer and a portion of the first silicon layer and the dielectric layer is removed to define a control gate opening within the first silicon layer on a portion of the well region. Next, the substrate is doped in the region under the control gate opening to adjust a threshold voltage of the flash memory cell. A gate oxide layer is grown from the substrate in the control gate opening and a second silicon layer is formed on the substrate to fill within the control gate opening and to cover the remaining dielectric layer. The second silicon layer, the dielectric layer, and the first silicon layer are then patterned to form a gate structure of the flash memory cell, and to leave a drain opening exposing a portion of the tunnel oxide on the well region. Finally, the substrate is doped to form a drain region in the substrate between the gate structure and one of the isolation regions.

Abstract translation: 形成闪存单元的方法主要包括以下步骤。 首先，提供其上具有隔离区域并且在隔离区域之间设置有阱区的半导体衬底。 在阱区上形成隧道氧化物层，在衬底上形成第一硅层。 在第一硅层上形成电介质层，去除第一硅层和电介质层的一部分以在阱区的一部分上的第一硅层内限定控制栅极开口。 接下来，在控制栅极开口下的区域中掺杂衬底，以调整闪存单元的阈值电压。 在控制栅极开口中从衬底生长栅极氧化物层，并且在衬底上形成第二硅层，以填充控制栅极开口内并覆盖剩余的电介质层。 然后对第二硅层，电介质层和第一硅层进行构图以形成闪存单元的栅极结构，并且留下漏极开口，暴露隧道氧化物在阱区上的一部分。 最后，衬底被掺杂以在栅极结构和隔离区之一之间的衬底中形成漏区。

公开(公告)号：US06193482B1

公开(公告)日：2001-02-27

申请号：US09422962

申请日：1999-10-22

Applicant: Chih-Ming Chen

Inventor： Chih-Ming Chen

IPC: F04B3910

CPC classification number: F04B39/042 ,  F04B39/0016

Abstract: The present invention relates to an improved structure of a piston for air-filing device by making use of air pressure formed as a result of the reciprocation action of piston within the cylinder to urge an air-tightness disc mounted at the top of the piston to close rapidly and to open instantaneously. At the simultaneous reciprocation action of the piston, the cylinder is provided with a rapid flowing in of air without passing through an air-inlet valve and the air is compressible. This facilitates the speed of compression of the entry air, and avoids the installation of the air-inlet valve.

Abstract translation: 本发明涉及一种利用由于活塞在气缸内的往复运动而形成的空气压力而使安装在活塞顶部的气密性盘的空气压力的空气压缩装置的活塞的改进结构， 快速关闭并立即打开。 在活塞的同时往复运动的作用下，气缸被提供有快速流入空气中而不通过进气阀并且空气是可压缩的。 这有助于进入空气的压缩速度，并避免进气阀的安装。

公开(公告)号：US6111788A

公开(公告)日：2000-08-29

申请号：US382078

申请日：1999-08-24

Applicant: Chih-Ming Chen ,  Min-Hwa Chi

Inventor： Chih-Ming Chen ,  Min-Hwa Chi

IPC: G11C16/10 ,  G11C16/14 ,  G11C16/04

CPC classification number: G11C16/14 ,  G11C16/10

Abstract: A method of programming and erasing a triple-poly split-gate flash memory. The memory cell is programmed by substrate hot-electron injection and erased by the tunneling effect and an inversion layer near the drain region. Such programming/erasing procedures can achieve uniform injection with low programming current and high injection efficiency.

Abstract translation: 一种编程和擦除三重分裂门闪存的方法。 通过衬底热电子注入来编程存储单元，并通过隧道效应擦除存储单元，并在漏极区附近反转层。 这种编程/擦除程序可以实现均匀的注入，低编程电流和高注入效率。

公开(公告)号：US06066875A

公开(公告)日：2000-05-23

申请号：US63032

申请日：1998-04-20

Applicant: Chih-Ming Chen

Inventor： Chih-Ming Chen

IPC: H01L29/423 ,  H01L29/788

CPC classification number: H01L29/42324 ,  H01L29/7885

Abstract: A split-gate source side injection flash EEPROM array structure and method of fabrication that utilizes the same polysilicon layer to form the control gate and the floating gate. Furthermore, there is a tunneling oxide layer underneath the floating gate, a gate oxide layer underneath the control gate, and that the tunneling oxide layer has a thickness smaller than the gate oxide layer. Since the control gate and the floating gate are formed on a silicon layer through the same patterning process, polysilicon spacers can be used to control the gap width between the control gate and the floating gate. Therefore, a reliable and reproducible flash cell array can be produced.

Abstract translation: 分闸门源注入快闪EEPROM阵列结构和制造方法利用相同的多晶硅层形成控制栅极和浮栅。 此外，在浮置栅极下方存在隧道氧化物层，在控制栅极下方的栅极氧化物层，并且隧道氧化物层具有小于栅极氧化物层的厚度。 由于通过相同的构图工艺在硅层上形成控制栅极和浮置栅极，因此可以使用多晶硅间隔物来控制控制栅极和浮置栅极之间的间隙宽度。 因此，可以生产可靠且可重现的闪存单元阵列。

公开(公告)号：US5922352A

公开(公告)日：1999-07-13

申请号：US792001

申请日：1997-01-31

Applicant: Chih-Ming Chen ,  Joseph C.H. Chou

Inventor： Chih-Ming Chen ,  Joseph C.H. Chou

IPC: A61K9/20 ,  A61K9/24

CPC classification number: A61K9/209 ,  A61K9/2077

Abstract: A controlled release dosage form which comprises:(a) a homogeneous compressed core which comprises a compressed granulation of:(i) particles of a calcium channel blocker compound coated with an enteric polymer that are dispersed onto a solid pharmaceutical filler; and(b) a continuous compressed outer layer around said homogeneous compressed core which comprises a compressed granulation of:(i) one or more pharmaceutically acceptable polymers which form a hydrogel in which calcium channel blocker compound is dispersed.

Abstract translation: 一种控释剂型，其包含：（a）均质压制芯，其包含压缩造粒物：（i）涂覆有肠溶性聚合物的钙通道阻断剂化合物颗粒分散在固体药物填料上; 和（b）围绕所述均质压缩芯的连续压缩外层，其包含压缩造粒：（i）形成钙通道阻断剂化合物分散的水凝胶的一种或多种药学上可接受的聚合物。

公开(公告)号：US5918121A

公开(公告)日：1999-06-29

申请号：US113019

申请日：1998-07-09

Applicant: Wen-Ying Wen ,  Chih-Ming Chen

Inventor： Wen-Ying Wen ,  Chih-Ming Chen

IPC: H01L21/02 ,  H01L27/08 ,  H01L29/86 ,  H01L29/72 ,  H01L21/76

CPC classification number: H01L28/10 ,  H01L27/08 ,  H01L29/86

Abstract: A method for making planar silicon-based inductor structure with improved Q is disclosed. This method includes the steps of: (a) providing a lightly-doped P-type substrate as a starting wafer; (b) forming a preliminary oxide layer on the lightly-doped P-type substrate; (c) forming a first oxide layer from the preliminary oxide layer enclosing a predetermined epitaxial area; (d) depositing an epitaxial layer in the epitaxial area using intrinsic doping; (e) forming a second oxide layer which covers both the epitaxial layer and the first oxide layer, and is merged with the first oxide layer to thus form a contiguous inter-connected inductor oxide layer; (f) forming a metal line according to a planar inductor pattern so as to form a silicon-based inductor structure. The epitaxial layer has a resistivity of at least 2 K ohm-cm. The planar silicon-based inductor improves the Q value by reducing or stopping current losses into the substrate.

Abstract translation: 公开了一种制造具有改进Q的平面硅基电感器结构的方法。 该方法包括以下步骤：（a）提供轻掺杂的P型衬底作为起始晶片; （b）在轻掺杂的P型衬底上形成预氧化物层; （c）从包围预定外延区域的预备氧化物层形成第一氧化物层; （d）使用本征掺杂在外延区中沉积外延层; （e）形成覆盖所述外延层和所述第一氧化物层的第二氧化物层，并且与所述第一氧化物层合并从而形成连续的相互连接的电感器氧化物层; （f）根据平面电感器图案形成金属线以形成硅基电感器结构。 外延层具有至少2KΩ·cm的电阻率。 平面硅基电感器通过减少或阻止电流损耗进入衬底来提高Q值。

公开(公告)号：US5458888A

公开(公告)日：1995-10-17

申请号：US205005

申请日：1994-03-02

Applicant: Chih-Ming Chen

Inventor： Chih-Ming Chen

IPC: A61K9/20 ,  A61K9/26 ,  A61K9/32 ,  A61K9/22

CPC classification number: A61K9/2095 ,  A61K9/2081

Abstract: The present invention provides a controlled release dosage form which may be made using a blend having an internal drug containing phase and an external phase which comprises a polyethylene glycol polymer which has a weight average molecular weight of from 3000 to 10000. The dosage formulation may be pressed into tablets or it may be formed directly into discrete orally administrable shapes by pressing the blend into a cavity which is sized to accept a volume of the blend which is equivalent to one dosage unit. A plurality of cavities may be formed in a strip of plastic which may be sealed after the blend of the invention is pressed in place to form a plurality of unit doses of a drug.

Abstract translation: 本发明提供了可以使用具有内部药物含有相和外部相的共混物制备的控释剂型，其包含重均分子量为3000至10000的聚乙二醇聚合物。剂型可以是 压制成片剂，或者可以通过将共混物压入空腔中直接形成离散的可口服形式，该空腔的尺寸适于接受相当于一个剂量单位的一定体积的共混物。 多个空腔可以形成在塑料条中，其可以在将本发明的共混物压在适当位置以形成多个单位剂量的药物之后被密封。

公开(公告)号：US5419917A

公开(公告)日：1995-05-30

申请号：US195377

申请日：1994-02-14

Applicant: Chih-Ming Chen ,  Charles S. L. Chiao

Inventor： Chih-Ming Chen ,  Charles S. L. Chiao

IPC: A61K9/20 ,  A61K9/22 ,  A61K9/26 ,  A61K47/38

CPC classification number: A61K9/2054 ,  A61K9/2009

Abstract: The invention is directed to a method for the modification of the rate of release of a drug from a hydrogel which is based on the use of an effective amount of a pharmaceutically acceptable ionizable compound that is capable of providing a substantially zero-order release rate of drug from the hydrogel.

Abstract translation: 本发明涉及一种用于从水凝胶中改变药物释放速率的方法，其基于使用有效量的药学上可接受的可电离化合物，其能够提供基本上零级的释放速率 药物从水凝胶。