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Patent Agency Ranking
公开(公告)号：US20160190434A1
公开(公告)日：2016-06-30
申请号：US14584001
申请日：2014-12-29
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/08 , G11C11/161 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.
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公开(公告)号：US20140264664A1
公开(公告)日：2014-09-18
申请号：US13800966
申请日：2013-03-13
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： David W. Abraham , John K. De Brosse , Philip L. Trouilloud , Daniel C. Worledge
CPC classification number: H01L43/12 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.
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公开(公告)号：US08835889B1
公开(公告)日：2014-09-16
申请号：US13800966
申请日：2013-03-13
Applicant: International Business Machines Corporation
Inventor： David W. Abraham , John K. De Brosse , Philip L. Trouilloud , Daniel C. Worledge
CPC classification number: H01L43/12 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.
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公开(公告)号：US20140217524A1
公开(公告)日：2014-08-07
申请号：US13761792
申请日：2013-02-07
Applicant: The Board of Trustees of the University of Alabama , INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Marcin J. Gajek , Daniel C. Worledge , William H. Butler
CPC classification number: H01L43/02 , H01F10/002 , H01L43/08 , H01L43/10 , H01L43/12 , H03K19/168
Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
Abstract translation: 磁逻辑单元包括第一电极部分，布置在第一电极上的磁性部分，磁性部分包括反铁磁材料或铁磁材料，布置在磁性部分上的电介质部分和布置在磁性部分上的第二电极部分 电介质部分。
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公开(公告)号：US20140169080A1
公开(公告)日：2014-06-19
申请号：US13717079
申请日：2012-12-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Daniel C. Worledge , Guohan Hu
CPC classification number: G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/08 , Y10S977/933 , Y10S977/935
Abstract: A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.
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