公开(公告)号：US20120028414A1

公开(公告)日：2012-02-02

申请号：US13262830

申请日：2010-04-02

申请人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

发明人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

IPC分类号： H01L21/50

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

摘要翻译： 制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离粘合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的反面的至少一部分，以露出电导体的底部。

公开(公告)号：US07944564B2

公开(公告)日：2011-05-17

申请号：US12642446

申请日：2009-12-18

申请人： Norihiko Utsunomiya ,  Mitsuro Sugita ,  Satoru Nishiuma ,  Takao Yonehara

发明人： Norihiko Utsunomiya ,  Mitsuro Sugita ,  Satoru Nishiuma ,  Takao Yonehara

IPC分类号： G01N22/00

CPC分类号： G01N21/554 ,  G01N21/648 ,  G01N2021/258 ,  G01N2201/0635 ,  G01N2201/0636

摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.

摘要翻译： 一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其 要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上 使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

公开(公告)号：US07772078B2

公开(公告)日：2010-08-10

申请号：US12198838

申请日：2008-08-26

申请人： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

发明人： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

IPC分类号： H01L21/76

CPC分类号： H01L29/518 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/94

摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

摘要翻译： 锗电路型结构方便。 在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。 在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。 这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

公开(公告)号：US20100197054A1

公开(公告)日：2010-08-05

申请号：US12669790

申请日：2008-10-01

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L33/0079

摘要： A method for manufacturing a light emitting device according to the present invention has the steps of: preparing a first member which has an emission layer on a substrate having a compound semiconductor layer through an etch stop layer and a sacrifice layer; forming a bonded structure by bonding the first member on a second member including a silicon layer so that the emission layer is positioned in the inner side; providing a through groove in the substrate so that the etch stop layer is exposed, by etching the first member from the reverse side of the emission layer; and removing the substrate having the through groove provided therein from the bonded structure by etching the sacrifice layer.

摘要翻译： 根据本发明的制造发光器件的方法具有以下步骤：通过蚀刻停止层和牺牲层来制备在具有化合物半导体层的衬底上具有发光层的第一构件; 通过将第一构件粘合在包括硅层的第二构件上以使得发射层位于内侧来形成接合结构; 通过从发射层的相反侧蚀刻第一构件，在衬底中提供通孔，使得蚀刻停止层暴露; 并且通过蚀刻牺牲层从接合结构去除其中设置有通孔的基板。

公开(公告)号：US07732238B2

公开(公告)日：2010-06-08

申请号：US11381267

申请日：2006-05-02

申请人： Yoshinobu Sekiguchi ,  Takao Yonehara

发明人： Yoshinobu Sekiguchi ,  Takao Yonehara

IPC分类号： H01L21/00

CPC分类号： H01L21/00 ,  H01L27/10 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687

摘要： A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member and a second member is provided. The first member has a first surface on the side of the bonding interface between the first member and the second member and a second surface on the opposite side of the bonding interface. The second member has a third surface on the bonding interface side and a fourth surface on the opposite side of the bonding interface. The first member includes photoelectric conversion elements which are formed on the first surface before the first member is bonded to the second member. The second member includes circuit elements which are formed on the third surface before bonding.

摘要翻译： 提供一种具有可以简化其制造过程的三维结构的固态图像感测装置。 提供了通过接合第一构件和第二构件形成的固态图像感测装置。 第一构件具有在第一构件和第二构件之间的接合界面侧的第一表面和在接合界面的相对侧上的第二表面。 第二构件在接合界面侧具有第三表面和在接合界面的相对侧上的第四表面。 第一构件包括在第一构件接合到第二构件之前形成在第一表面上的光电转换元件。 第二构件包括在接合之前形成在第三表面上的电路元件。

公开(公告)号：US20100097612A1

公开(公告)日：2010-04-22

申请号：US12642446

申请日：2009-12-18

申请人： Norihiko Utsunomiya ,  Mitsuro Sugita ,  Satoru Nishiuma ,  Takao Yonehara

发明人： Norihiko Utsunomiya ,  Mitsuro Sugita ,  Satoru Nishiuma ,  Takao Yonehara

IPC分类号： G01N21/55

CPC分类号： G01N21/554 ,  G01N21/648 ,  G01N2021/258 ,  G01N2201/0635 ,  G01N2201/0636

摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.

摘要翻译： 一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其 要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上 使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

公开(公告)号：US20100026779A1

公开(公告)日：2010-02-04

申请号：US12442902

申请日：2007-10-25

申请人： Takao Yonehara ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

发明人： Takao Yonehara ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

IPC分类号： B41J2/45 ,  H01L21/18 ,  H01L29/06 ,  H01L21/306 ,  H01L33/00 ,  H01L21/762

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L21/7806 ,  H01L21/784 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/00

摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

摘要翻译： 提供了一种新颖的半导体制品制造方法等。 制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和 半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025） 半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

公开(公告)号：US07341923B2

公开(公告)日：2008-03-11

申请号：US11039845

申请日：2005-01-24

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L21/30

CPC分类号： H01L21/76259 ,  H01L21/76254

摘要： A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.

摘要翻译： 在分离层上形成具有分离层和Ge层的第一衬底的步骤，以及通过绝缘层将第一衬底粘合到第二衬底上而形成键合衬底叠层的步骤，以及将第 进行分离层的键合衬底叠层，从而获得具有GOI结构的衬底。

公开(公告)号：US07272290B2

公开(公告)日：2007-09-18

申请号：US10571696

申请日：2004-11-08

申请人： Mitsuro Sugita ,  Takao Yonehara

发明人： Mitsuro Sugita ,  Takao Yonehara

IPC分类号： G02B6/10

CPC分类号： B82Y20/00 ,  G02B6/12 ,  G02B6/12002 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B6/14

摘要： A method for production of an optical element includes preparing a first member having formed on the surface of a first substrate 101 a first layer 103 by at least one of epitaxial growth and pore-making (micropore-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer by at least one of epitaxial growth and pore-making (micropore-making), bonding the first layer 103 and the second layer, separating the second substrate 104 and the second layer of the second member from each other at the porous layer for layer separation in the second member, to form a laminated structure on the first substrate 101, forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.

摘要翻译： 一种光学元件的制造方法包括：通过外延生长和制孔（微孔制造）中的至少一种，制备第一部件，该第一部件在第一基板101的表面上形成第一层103，第二部件具有多孔 在第二基板104上形成的用于层间分离的层，并且通过外延生长和制孔（微孔制造）中的至少一个在其上形成第二层，将第一层103和第二层接合，分离第二基板104和 所述第二构件的第二层在所述第二构件中用于层分离的多孔层处彼此形成，以在所述第一基板101上形成层压结构，形成折射率分布图案，所述折射率分布图案由 第一层103和第二层中的至少一个。

公开(公告)号：US20070031108A1

公开(公告)日：2007-02-08

申请号：US10571696

申请日：2004-11-08

申请人： Mitsuro Sugita ,  Takao Yonehara

发明人： Mitsuro Sugita ,  Takao Yonehara

IPC分类号： G02B6/00

CPC分类号： B82Y20/00 ,  G02B6/12 ,  G02B6/12002 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B6/14

摘要： A method for production of an optical element includes preparing a first member having formed on the surface of a first substrate 101 a first layer 103 by at least one of epitaxial growth and pore-making (micropore-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer by at least one of epitaxial growth and pore-making (micropore-making), bonding the first layer 103 and the second layer, separating the second substrate 104 and the second layer of the second member from each other at the porous layer for layer separation in the second member, to form a laminated structure on the first substrate 101, forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.