公开(公告)号：US08691623B2

公开(公告)日：2014-04-08

申请号：US12699240

申请日：2010-02-03

申请人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

发明人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC分类号： H01L21/00 ,  H01L21/16

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US08592861B2

公开(公告)日：2013-11-26

申请号：US13537408

申请日：2012-06-29

申请人： Kengo Akimoto ,  Hisashi Ohtani ,  Misako Hirosue

发明人： Kengo Akimoto ,  Hisashi Ohtani ,  Misako Hirosue

IPC分类号： H01L29/66

CPC分类号： H01L27/124 ,  H01L27/3244 ,  H01L2227/323

摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.

摘要翻译： 本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。 根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一种导电类型的杂质区域接触的布线层，其设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

公开(公告)号：US08502216B2

公开(公告)日：2013-08-06

申请号：US12612700

申请日：2009-11-05

申请人： Kengo Akimoto ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Shunpei Yamazaki

IPC分类号： H01L29/26

CPC分类号： H01L29/66742 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.

摘要翻译： 本发明的目的是防止诸如水分和氧气的杂质混入氧化物半导体中并抑制其中使用氧化物半导体的半导体器件的半导体特性的变化。 另一个目的是提供一种具有高可靠性的半导体器件。 提供在具有绝缘表面的衬底上的栅极绝缘膜，设置在栅极绝缘膜上的源极和漏极，设置在源电极和漏极上的第一氧化物半导体层，以及源极和漏极区 设置在源电极和漏电极之间以及第一氧化物半导体层。 提供与第一氧化物半导体层接触的阻挡膜。

公开(公告)号：US08492758B2

公开(公告)日：2013-07-23

申请号：US12887646

申请日：2010-09-22

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US08481363B2

公开(公告)日：2013-07-09

申请号：US13227585

申请日：2011-09-08

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC分类号： H01L21/34

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.

摘要翻译： 该半导体器件包括薄膜晶体管，该薄膜晶体管包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的源极电极层和漏极电极层，源电极层上的缓冲层和 漏极电极层和缓冲层上的半导体层。 与栅电极层重叠的半导体层的一部分与栅极绝缘层相接触并且设置在源极电极层和漏极电极层之间。 半导体层是含有铟，镓和锌的氧化物半导体层。 缓冲层含有具有n型导电性的金属氧化物。 半导体层和源极和漏极电极层通过缓冲层彼此电连接。

公开(公告)号：US08436359B2

公开(公告)日：2013-05-07

申请号：US13159449

申请日：2011-06-14

申请人： Kengo Akimoto

发明人： Kengo Akimoto

IPC分类号： H01L27/14

CPC分类号： H01L27/12 ,  H01L27/105 ,  H01L27/11293 ,  H01L27/1214 ,  H01L27/1266

摘要： The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electrically connected to the other of the source region and the drain region; a second interlayer insulating film formed over the first interlayer insulating film, the first electrode, and the second electrode; a first wiring electrically connected to one of the first electrode and the second electrode, on the second interlayer insulating film; and a second wiring not electrically connected to the other of the first electrode and the second electrode, on the second interlayer insulating film; in which the second wiring is not electrically connected to the other of the first electrode and the second electrode by a separation region formed in the second interlayer insulating film.

公开(公告)号：US08421083B2

公开(公告)日：2013-04-16

申请号：US12846556

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki ,  Hideaki Kuwabara

IPC分类号： H01L29/04 ,  H01L21/00 ,  G02F1/135

CPC分类号： H01L33/0041 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.

摘要翻译： 在使用第一氧化物半导体层和第二氧化物半导体层的堆叠的底栅极薄膜晶体管中，形成作为沟道保护层的氧化物绝缘层，与氧化物半导体层的与 栅电极层。 在与绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的叠层的周边部分（包括侧面）的氧化物绝缘层。

公开(公告)号：US08378344B2

公开(公告)日：2013-02-19

申请号：US12869327

申请日：2010-08-26

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L29/10

CPC分类号： H01L27/1225 ,  H01L27/322 ,  H01L27/3262

摘要： It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.

摘要翻译： 本发明的目的是提供一种在一个衬底上形成多种电路的发光器件，并且提供与多种电路的特性对应的多种薄膜晶体管。 将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管，并且将沟道蚀刻薄膜晶体管用于驱动器电路。 像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。

公开(公告)号：US08344372B2

公开(公告)日：2013-01-01

申请号：US12570498

申请日：2009-09-30

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/124 ,  G09G3/3233 ,  G09G2310/0286 ,  G09G2310/0297 ,  H01L21/02565 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518

摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced.

摘要翻译： 随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。 栅极线和信号线的数量的增加使得难以安装具有用于通过接合等驱动栅极线和信号线的驱动电路的IC芯片，这导致制造成本的增加。 驱动像素部的像素部和驱动电路设置在同一基板上。 像素部分和驱动电路的至少一部分使用薄膜晶体管形成，其中每个使用氧化物半导体。 像素部分和驱动电路均设置在相同的基板上，由此降低了制造成本。

公开(公告)号：US08334540B2

公开(公告)日：2012-12-18

申请号：US13173559

申请日：2011-06-30

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

摘要翻译： 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。