摘要:
A method of dissipating heat from a heat source includes providing a plurality of heat flux paths in a plane of the heat source to remove heat from the heat source.
摘要:
An integrated circuit includes a plurality of processor cores and a readable non-volatile memory that stores information expressive of at least one operating characteristic for each of the plurality of processor cores. Also disclosed is a method to operate a data processing system, where the method includes providing a multicore processor that contains a plurality of processor cores and a readable non-volatile memory that stores information, determined during a testing operation, that is indicative of at least a maximum operating frequency for each of the plurality of processor cores. The method further includes operating a scheduler coupled to an operating system and to the multicore processor, where the scheduler is operated to be responsive at least in part to information read from the memory to schedule the execution of threads to individual ones of the processor cores for a more optimal usage of energy.
摘要:
In one embodiment, the invention is a method and apparatus for dynamic measurement of across-chip temperatures. One embodiment of a method for measuring temperatures across an integrated circuit chip includes generating a plurality of surface images of the integrated circuit chip, deriving power values across the integrated circuit chip from the surface images, computing the temperatures across the integrated circuit chip in accordance with the power values, and outputting the temperatures.
摘要:
A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with first contacts to the devices and wiring levels on a first side to the first contacts, removing a lower silicon layer to expose the buried oxide layer, forming second contacts to the devices through the buried oxide layer and forming wiring levels over the buried oxide layer to the second contacts.
摘要:
A heat spreader attached to a heat source that includes a semiconductor chip includes a silicon structure that provides a plurality of heat flux paths, including a lateral, in-plane heat flux path. The heat spreader is mounted in-plane with the heat source.
摘要:
A mechanism is provided in a cache for emulating larger linesize in a substrate with smaller linesize using gang fetching and gang replacement. Gang fetching fetches multiple lines on a cache miss to ensure that all smaller lines that make up the larger line are resident in cache at the same time. Gang replacement evicts all smaller lines in cache that would have been evicted had the cache linesize been larger. The mechanism provides adaptive linesize using set dueling by dynamically selecting between multiple linsizes depending on which linesize performs the best at runtime. Set dueling dedicates a portion of sets of the cache to always use smaller linesize and dedicates one or more portions of the sets of cache to always emulate larger linesizes. One or more counters keep track of which linesize has the best performance. The cache uses that linesize for the remainder of the sets.
摘要:
A design structure for a 3D chip having at least one I/O layer connected to other 3D chip layers by a vertical bus such that the I/O layer(s) may accommodate protection and off-chip device drive circuits, customization circuits, translation circuits, conversions circuits and/or built-in self-test circuits capable of comprehensive chip or wafer level testing wherein the I/O layers function as a testhead. Substitution of I/O circuits or structures may be performed using E-fuses or the like responsive to such testing.
摘要:
An integrated circuit and a design structure are disclosed. An integrated circuit may comprise: a data retaining device; a charge storing device coupled to the data retaining device such that a use of the data retaining device triggers a charging of the charge storing device by a charge source; and means for measuring a potential of the charge storing device, the measuring means being communicatively coupled to a calculating mean which determines a relative amount of usage of the data retaining device based on the measured potential.
摘要:
A system for determining a relative amount of usage of a data retaining device are disclosed. A charge storing device is coupled to a data retaining device in a manner that a use of the data retaining device triggers a charging of the charge storing device. In a period that the data retaining device idles, charges in the charge storing device decay due to natural means. As such, a potential of the charge storing device may be used to indicate an amount of usage of the data retaining device. A comparison of the potentials of two charge storing devices coupled one-to-one to two data retaining devices may be used as a basis to determine a relative amount of usage of each of the two data retaining devices comparing to the other.
摘要:
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.