公开(公告)号：US20070096210A1

公开(公告)日：2007-05-03

申请号：US11594759

申请日：2006-11-09

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L27/1274 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L21/8213 ,  H01L29/02 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78687 ,  H01L29/78696

摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region. A process for fabricating the device is also disclosed.

摘要翻译： 一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或者所述区域包括具有比所述沟道区大的带隙的材料。 还公开了一种用于制造该器件的工艺。

公开(公告)号：US07160792B2

公开(公告)日：2007-01-09

申请号：US10765865

申请日：2004-01-29

申请人： Hongyong Zhang ,  Koichiro Tanaka

发明人： Hongyong Zhang ,  Koichiro Tanaka

IPC分类号： H01L21/428

CPC分类号： H01L21/02686 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268

摘要： In an annealing process of illuminating a semiconductor thin film with laser light, in the case where the laser illumination is performed at an energy level that is lower than an output energy range that allows a laser apparatus to operate most stably, the laser output is fixed somewhere in the above output energy range and the illumination energy is changed by inserting or removing a light attenuation filter into or from the laser illumination optical path. As a result, the time required for the laser processing can be shortened.

摘要翻译： 在用激光照射半导体薄膜的退火处理中，在能够使激光装置稳定运行的输出能量范围低的能量级进行激光照射的情况下，激光输出固定 在上述输出能量范围的某处，并且通过将光衰减滤光器插入到激光照射光路中或从激光照射光路中移除光衰减滤波器来改变照明能量。 结果，可以缩短激光加工所需的时间。

公开(公告)号：US07148542B2

公开(公告)日：2006-12-12

申请号：US10805327

申请日：2004-03-22

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L27/01

CPC分类号： H01L27/1274 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L21/8213 ,  H01L29/02 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78687 ,  H01L29/78696

摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region.A process for fabricating the device is also disclosed.

摘要翻译： 一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或者所述区域包括具有比所述沟道区大的带隙的材料。 还公开了一种用于制造该器件的工艺。

公开(公告)号：US20060227232A1

公开(公告)日：2006-10-12

申请号：US11418279

申请日：2006-05-04

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Yurika Satou

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Yurika Satou

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14643 ,  G02F1/1345 ,  G02F1/136286 ,  G02F2001/13312 ,  H01L27/124 ,  H01L27/14634

摘要： To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.

公开(公告)号：US07109108B2

公开(公告)日：2006-09-19

申请号：US10938500

申请日：2004-09-13

申请人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

发明人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L21/4763

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78696 ,  Y10S257/90

摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.

摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘附到暴露的源极和漏极区域，并且允许金属与硅反应来获得。 可以实现高性能TFT。 金属硅化物层实现与源极和漏极的良好接触，并且由于其具有比硅更低的电阻率，所以源极和漏极区域之间的寄生电阻可以显着降低。

公开(公告)号：US20060203139A1

公开(公告)日：2006-09-14

申请号：US11417202

申请日：2006-05-04

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

IPC分类号： G02F1/136

CPC分类号： H04N1/00129 ,  G02F1/133345 ,  G02F1/135 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136286 ,  G02F2001/13312 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/14665 ,  H04M1/0264 ,  H04M1/0266 ,  H04N1/00127 ,  H04N1/028 ,  H04N1/02805

摘要： A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.

公开(公告)号：US20060192202A1

公开(公告)日：2006-08-31

申请号：US11321640

申请日：2005-12-30

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L29/786

CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

摘要： In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

公开(公告)号：US20060146266A1

公开(公告)日：2006-07-06

申请号：US11276977

申请日：2006-03-20

申请人： Hongyong Zhang ,  Takeshi Fukunaga

发明人： Hongyong Zhang ,  Takeshi Fukunaga

IPC分类号： G02F1/1339

CPC分类号： G02F1/13392 ,  G02F1/1341 ,  G02F1/1362 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/133388

摘要： To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth of the pixel pitch, whereby the high image quality liquid crystal display device with no occurrence of image display failure caused by disturbances of an electric field such as disclination, can be realized.

摘要翻译： 为了提供制造高画质液晶显示装置的技术，用于保持液晶层的单元间隙的设定范围根据像素间距的距离来限制，其中单元间隙被设定为 距离为像素间距的十分之一，由此可以实现由于诸如旋错的电场的干扰而引起的不产生图像显示故障的高图像质量的液晶显示装置。

公开(公告)号：US07046282B1

公开(公告)日：2006-05-16

申请号：US09156461

申请日：2000-09-05

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Yurika Satou

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Yurika Satou

IPC分类号： H04N3/14

CPC分类号： H01L27/14643 ,  G02F1/1345 ,  G02F1/136286 ,  G02F2001/13312 ,  H01L27/124 ,  H01L27/14634

摘要： To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.

摘要翻译： 为了以低成本制造与图像传感器集成的有源矩阵型显示装置，并没有复杂的过程，在光接收矩阵上形成层叠有TFT和光接收单元的图像传感器，显示矩阵布置有TFT和像素 形成有用作黑矩阵的电极层的电极，受光单元的下电极由与黑矩阵相同的起始膜形成，形成用于固定上电极的电位的端子 通过开始与信号线相同的膜，电极层或像素电极和端子也用作光接收单元的侧面的屏蔽电极，因为其电位固定。

公开(公告)号：US07026200B2

公开(公告)日：2006-04-11

申请号：US10289313

申请日：2002-11-07

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L21/84

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02631 ,  H01L21/2022 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603

摘要： A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.