Characterization of impaired intervals in a voice over packet session using audio frame loss concealment
    132.
    发明授权
    Characterization of impaired intervals in a voice over packet session using audio frame loss concealment 有权
    使用音频帧丢失隐藏来表征在分组会话中的语音中的间隔

    公开(公告)号:US07433358B1

    公开(公告)日:2008-10-07

    申请号:US11177939

    申请日:2005-07-08

    Abstract: An embodiment may include an apparatus comprising a dejitter buffer to receive packets containing audio data, a codec coupled with the dejitter buffer, the codec to receive coded audio frames from the dejitter buffer and decode them, and a concealed seconds meter coupled with the dejitter buffer, the concealed seconds meter to record concealment events by the decoder to provide an objective measure of media impairment. Another exemplary embodiment may be a method comprising receiving packets containing audio information at a dejitter buffer, decomposing the packets to coded audio frames, sending the coded audio frames to a decoder and decoding the frames, generating a concealment output stream if the decoder does not receive a valid frame from the dejitter buffer, and recording concealment events to provide an objective measure of media impairment.

    Abstract translation: 一个实施例可以包括一个装置,它包括一个去抖动缓冲器,用于接收包含音频数据的数据包,一个与该去抖动缓冲器耦合的编解码器,该编解码器用于从该去抖动缓冲器接收编码的音频帧并对它们进行解码,以及一个与该去抖动缓冲器耦合的隐藏秒表 ,隐形秒表由解码器记录隐藏事件,以提供媒体损害的客观量度。 另一个示例性实施例可以是一种方法,包括在去抖动缓冲器处接收包含音频信息的分组,将分组分解成编码音频帧,将编码音频帧发送到解码器并解码该帧,如果解码器没有接收到,则产生隐藏输出流 来自去抖动缓冲器的有效帧,以及记录隐藏事件以提供媒体损害的客观测量。

    Method And System For Alert Throttling In Media Quality Monitoring
    136.
    发明申请
    Method And System For Alert Throttling In Media Quality Monitoring 有权
    媒体质量监控中的警示调节方法与系统

    公开(公告)号:US20070248022A1

    公开(公告)日:2007-10-25

    申请号:US11379312

    申请日:2006-04-19

    Abstract: A method for alert throttling in media quality monitoring, includes monitoring a plurality of active communication sessions. Each active communication session is between at least two endpoints. The method also includes detecting at least one quality-impacted communication session out of the plurality of active communication sessions. The method also includes generating a first alert for each detected quality-impacted communication session out of the plurality of active communication sessions until a first throttling number of quality-impacted communication sessions is detected out of the plurality of active communication sessions. Upon detecting the first throttling number of quality-impacted communication sessions, the method includes generating a second alert for each group of additional second number of quality-impacted communication sessions detected out of the plurality of active communication sessions.

    Abstract translation: 一种用于在媒体质量监测中进行警报节流的方法,包括监视多个主动通信会话。 每个活动通信会话在至少两个端点之间。 该方法还包括从多个主动通信会话中检测至少一个受质量影响的通信会话。 该方法还包括为多个活动通信会话中的每个检测到的受质量影响的通信会话生成第一警报,直到从多个主动通信会话中检测到受质量影响的通信会话的第一节流数量。 在检测到受质量影响的通信会话的第一节流数量时,该方法包括为从多个主动通信会话中检测到的对质量影响的通信会话的每组额外的第二数量生成第二警报。

    Power switches having positive-channel high dielectric constant insulated gate field effect transistors
    137.
    发明申请
    Power switches having positive-channel high dielectric constant insulated gate field effect transistors 有权
    具有正通道高介电常数绝缘栅场效应晶体管的电源开关

    公开(公告)号:US20070236850A1

    公开(公告)日:2007-10-11

    申请号:US11394810

    申请日:2006-03-31

    CPC classification number: H01L27/088

    Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    Abstract translation: 公开了用于微电子器件的功率开关单元。 一方面,微电子器件可以包括功能电路,以及电源开关单元,用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管,其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面,可以将过驱动电压施加到这种晶体管的栅极,以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

    MODULAR FORCE SENSOR
    139.
    发明申请
    MODULAR FORCE SENSOR 有权
    模块式传感器

    公开(公告)号:US20070151391A1

    公开(公告)日:2007-07-05

    申请号:US11553303

    申请日:2006-10-26

    Abstract: A modular force sensor apparatus, method, and system are provided to improve force and torque sensing and feedback to the surgeon performing a telerobotic surgery. In one embodiment, a modular force sensor includes a tube portion including a plurality of strain gauges, a proximal tube portion for operably coupling to a shaft of a surgical instrument that may be operably coupled to a manipulator arm of a robotic surgical system, and a distal tube portion for proximally coupling to a wrist joint coupled to an end portion.

    Abstract translation: 提供了一种模块式力传感器装置,方法和系统,以改善对外科医生执行远程外科手术的力和转矩检测和反馈。 在一个实施例中,模块化力传感器包括包括多个应变计的管部分,用于可操作地联接到外科器械的轴的近侧管部分,其可操作地联接到机器人手术系统的操纵臂,以及 用于向近侧联接到联接到端部的腕关节的远端管部分。

    Gate wiring layout for silicon-carbide-based junction field effect transistor
    140.
    发明授权
    Gate wiring layout for silicon-carbide-based junction field effect transistor 有权
    基于碳化硅的结型场效应晶体管的栅极布线布局

    公开(公告)号:US07164154B2

    公开(公告)日:2007-01-16

    申请号:US10995566

    申请日:2004-11-24

    CPC classification number: H01L29/8083 H01L29/1608

    Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

    Abstract translation: 碳化硅半导体器件包括:包括第一和第二栅极层,沟道层,源极层和沟槽的半导体衬底; 栅极布线,具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层,并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状,并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

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