公开(公告)号：US20070292802A1

公开(公告)日：2007-12-20

申请号：US11659371

申请日：2005-07-12

申请人： Tsutomu Sato

发明人： Tsutomu Sato

IPC分类号： G03F7/039 ,  G03F7/00 ,  G03F7/004

CPC分类号： B41C1/1008 ,  B41C2210/02 ,  B41C2210/06 ,  B41C2210/22 ,  B41C2210/24

摘要： There is provided a positive photosensitive composition which requires no burning, makes it possible to obtain necessary and sufficient adhesion when it is applied under a humidity of 25 to 60%, can be developed at a low alkali intensity, makes it possible to carry out development with keeping high sensitivity while forming no residue, ensures sharp edges, can provide a very hard resist film and is improved in scratch resistance in the handling before development. The composition comprises (A) an alkali-soluble high molecular substance having in the molecule thereof at least one carboxyl group, (B) a photo-thermal conversion material which absorbs infrared rays from an image exposure light source to convert the rays to heat, and (C) a thiol compound.

摘要翻译： 提供了不需要燃烧的正性感光性组合物，可以在25〜60％的湿度下使用时获得必要且充分的粘合性，可以以低的碱强度显影，可以进行显影 在不形成残留物的同时保持高灵敏度，确保锋利的边缘，可以提供非常硬的抗蚀剂膜，并且在显影前的处理中提高了耐擦伤性。 该组合物包含（A）在其分子中具有至少一个羧基的碱溶性高分子物质，（B）从图像曝光光源吸收红外线以将光线转换成热的光热转换材料， 和（C）硫醇化合物。

公开(公告)号：US20070269224A1

公开(公告)日：2007-11-22

申请号：US11749275

申请日：2007-05-16

申请人： Tsutomu Sato

发明人： Tsutomu Sato

IPC分类号： G03G15/00 ,  G03G15/08

CPC分类号： G03G15/0875 ,  G03G15/0863 ,  G03G15/0877

摘要： A toner cartridge inserted in an image forming apparatus and supplying toner to the image forming apparatus, the cartridge comprises a toner container that contains toner, and a protrusion for showing a type of the toner cartridge, wherein the protrusion forms a ramp inclining toward a direction the toner cartridge is inserted in the image forming apparatus.

摘要翻译： 一种插入图像形成装置中的调色剂盒，并将调色剂供给到图像形成装置，所述盒包括容纳调色剂的调色剂容器和用于显示调色剂盒类型的突起，其中所述突起形成朝向方向倾斜的斜面 调色剂盒插入图像形成装置中。

公开(公告)号：US20070222912A1

公开(公告)日：2007-09-27

申请号：US11688929

申请日：2007-03-21

申请人： Tsutomu Sato ,  Masayuki Yanagihara ,  Koichi Fukuda

发明人： Tsutomu Sato ,  Masayuki Yanagihara ,  Koichi Fukuda

IPC分类号： G02F1/1333

CPC分类号： G02F1/133528

摘要： The present invention realizes both the reduction of thickness of a liquid crystal panel and the acquisition of a sufficient strength of the liquid crystal display panel simultaneously. A display device including a display panel includes a first substrate, a second substrate which is arranged to face the first substrate in an opposed manner on a side closer to a viewer than the first substrate, an upper polarizer which is arranged on the side closer to the viewer than the second substrate, and a resin film which is arranged on the side closer to the viewer than the upper polarizer and is brought into close contact with the upper polarizer by adhesion, wherein an outer periphery of the upper polarizer is arranged more inside than an outer periphery of the second substrate, and an outer periphery of the resin film is arranged more outside than the outer periphery of the upper polarizer as viewed from a front surface of the display panel, and a cushion material which is brought into close contact with the second substrate and the resin film is interposed between the second substrate and the resin film more outside than the outer periphery of the upper polarizer.

摘要翻译： 本发明同时实现了液晶面板的厚度的减小和液晶显示面板的充分强度的获取。 包括显示面板的显示装置包括第一基板，第二基板，其布置成相对于第一基板在比观察者更靠近的一侧以相对的方式面对第一基板;上偏振器，其布置在更靠近 观看者比第二基板和布置在比上偏振片更靠近观察者的一侧的树脂膜，并且通过粘合与上偏振片紧密接触，其中上偏振器的外周更内侧 与第二基板的外周相比，从显示面板的前表面观察，树脂膜的外周配置在比上偏振片的外周更多的外侧，并且紧密接触的缓冲材料 第二基板和树脂膜介于第二基板和树脂膜之间比上偏振器的外周更外侧。

公开(公告)号：US07187035B2

公开(公告)日：2007-03-06

申请号：US10237206

申请日：2002-09-09

申请人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Hisato Oyamatsu

发明人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Hisato Oyamatsu

IPC分类号： H01L27/12

CPC分类号： H01L27/1203 ,  H01L21/84

摘要： A method of manufacturing a semiconductor device substrate is disclosed, which comprises forming a mask layer patterned on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the insulating layer, etching a protective layer deposited thinner on the semiconductor substrate than the thickness of the insulating layer to form a sidewall protective film which covers a side surface of the trench, etching the insulating layer from a bottom surface of the trench to the semiconductor substrate; and growing a single-crystalline layer from the surface of the semiconductor substrate exposed as a result of etching the insulating layer.

摘要翻译： 公开了一种制造半导体器件衬底的方法，其包括通过电绝缘层形成在半导体层与半导体衬底的表面绝缘的图案化的掩模层，根据掩模层的图案蚀刻半导体层以形成 导通绝缘层的沟槽，蚀刻比半导体衬底更薄的保护层比绝缘层的厚度形成覆盖沟槽侧表面的侧壁保护膜，从绝缘层的底表面蚀刻绝缘层 沟槽到半导体衬底; 以及从蚀刻绝缘层而暴露的半导体衬底的表面生长单晶层。

公开(公告)号：US07148543B2

公开(公告)日：2006-12-12

申请号：US10828337

申请日：2004-04-21

申请人： Takashi Yamada ,  Hajime Nagano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Hisato Oyamatsu ,  Shinichi Nitta

发明人： Takashi Yamada ,  Hajime Nagano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Hisato Oyamatsu ,  Shinichi Nitta

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L29/00 ,  H01L29/04 ,  H01L29/06

CPC分类号： H01L27/10894 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/10832 ,  H01L27/10861 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.

摘要翻译： 半导体芯片包括基底基板，在基底基板的一部分上具有体积生长层的体器件区域，在基底基板上具有埋入绝缘体的SOI器件区域和埋入绝缘体上的硅层，以及边界层 位于体器件区域和SOI器件区域之间的边界处。 本体装置区域具有第一装置制造表面，其中大块装置位于本体生长层上。 SOI器件区域具有第二器件制造表面，其中SOI器件位于硅层上。 第一和第二装置制造表面被定位在基本均匀的水平。

公开(公告)号：US20060234478A1

公开(公告)日：2006-10-19

申请号：US11455735

申请日：2006-06-20

申请人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Hisato Oyamatsu

发明人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Hisato Oyamatsu

IPC分类号： H01L21/36

CPC分类号： H01L27/1203 ,  H01L21/84

摘要： A method of manufacturing a semiconductor device substrate includes forming a mask layer pattern on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the insulating layer, etching a protective layer on the semiconductor substrate having a thickness less than the thickness of the insulating layer to form a sidewall protective film which covers a side surface of the trench, etching the insulating layer from a bottom surface of the trench to the semiconductor substrate; and growing a single-crystalline layer from the surface of the semiconductor substrate exposed as a result of etching the insulating layer.

摘要翻译： 一种制造半导体器件基板的方法包括：通过电绝缘层在与半导体衬底的表面绝缘的半导体层上形成掩模层图案，根据掩模层的图案蚀刻半导体层，形成通向 绝缘层，蚀刻具有小于绝缘层厚度的厚度的半导体衬底上的保护层，以形成覆盖沟槽侧表面的侧壁保护膜，从沟槽的底表面蚀刻绝缘层至 半导体衬底; 以及从蚀刻绝缘层而暴露的半导体衬底的表面生长单晶层。

公开(公告)号：US20060222998A1

公开(公告)日：2006-10-05

申请号：US10557798

申请日：2004-06-25

申请人： Tsutomu Sato

发明人： Tsutomu Sato

IPC分类号： G03C1/00

CPC分类号： B41C1/1008 ,  B41C2210/02 ,  B41C2210/06 ,  B41C2210/22 ,  B41C2210/24 ,  B41C2210/26 ,  B41C2210/262

摘要： There is provided a positive photosensitive composition which requires no burning, makes it possible to obtain necessary and sufficient adhesion when it is applied under a humidity of 25 to 60%, can be developed at a low alkali intensity, makes it possible to carry out development with keeping high sensitivity while forming no residue, ensures sharp edges, can provide a very hard resist film and is improved in scratch resistance in the handling before development. The positive photosensitive composition comprises, as essential components, (A) a high molecular substance having at least one carboxyl group in a molecule and (B) a photo-thermal conversion material that absorbs infrared rays from an image exposure light source to convert them into heat.

摘要翻译： 提供了不需要燃烧的正性感光性组合物，可以在25〜60％的湿度下使用时获得必要且充分的粘合性，可以以低的碱强度显影，可以进行显影 在不形成残留物的同时保持高灵敏度，确保锋利的边缘，可以提供非常硬的抗蚀剂膜，并且在显影前的处理中提高了耐擦伤性。 正型感光性组合物作为必要成分包含（A）分子中具有至少一个羧基的高分子物质和（B）吸收来自图像曝光光源的红外线的光热转换材料，将其转换为 热。

公开(公告)号：US20060131651A1

公开(公告)日：2006-06-22

申请号：US11340594

申请日：2006-01-27

申请人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

发明人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

IPC分类号： H01L27/12

CPC分类号： H01L27/10805 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1225 ,  G02B2006/12097 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78639

摘要： To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.

摘要翻译： 通过在半导体衬底的表面上二维地形成沟槽，然后对半导体衬底进行热处理，将多个沟槽改变为一个平坦的空间。

公开(公告)号：US20060065914A1

公开(公告)日：2006-03-30

申请号：US10711637

申请日：2004-09-29

申请人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

发明人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/28052 ,  H01L21/28079 ,  H01L21/7624 ,  H01L29/1045 ,  H01L29/165 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single-crystal semiconductor alloy which are disposed on opposite sides of the gate stack. Each of the semiconductor alloy regions is spaced a first distance from the gate stack. The source region and drain region of the FET are at least partly disposed in respective ones of the semiconductor alloy regions, such that the source region and the drain region are each spaced a second distance from the gate stack by a first spacer of the pair of first spacers, the second distance being different from the first distance.

公开(公告)号：US07019365B2

公开(公告)日：2006-03-28

申请号：US10637665

申请日：2003-08-11

申请人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

发明人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/10897 ,  H01L27/1203 ,  H01L27/1207

摘要： A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.