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    TOUCHSCREEN SYSTEM HAVING ON-PANEL TOUCH DRIVER CIRCUITRY
    141.
    发明申请
    TOUCHSCREEN SYSTEM HAVING ON-PANEL TOUCH DRIVER CIRCUITRY 审中-公开
    具有面板触摸驱动电路的触控系统

    公开(公告)号：US20140225840A1

    公开(公告)日：2014-08-14

    申请号：US13767242

    申请日：2013-02-14

    Applicant: APPLE INC.

    Inventor： Abbas Jamshidi-Roudbari ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Shih Chang Chang

    IPC: G06F3/041

    CPC classification number: G06F3/044 ,  G06F3/0412

    Abstract: A touchscreen system has a light transparent panel, a region of display elements below the panel, and a transparent conductor plate that overlays the region of display elements. The transparent conductor plate is made of a number of electrode segments. Touch driver circuits are positioned on the panel and in a border region thereof. Each touch driver circuit has a respective latch and a respective output stage. The output stage is coupled to a respective one of the electrode segments and has a signal input to receive a touch stimulus signal. The touch driver circuits may be operated in shift register fashion so that the touch stimulus signal is pulsed sequentially to the electrode segments. Other embodiments are also described and claimed.

    Abstract translation: 触摸屏系统具有透光面板，面板下方的显示元件区域和覆盖显示元件区域的透明导体板。 透明导体板由多个电极段构成。 触摸驱动器电路位于面板上及其边界区域中。 每个触摸驱动器电路具有相应的锁存器和相应的输出级。 输出级耦合到相应的一个电极段，并且具有用于接收触摸激励信号的信号输入。 触摸驱动器电路可以以移位寄存器方式操作，使得触摸激励信号顺序地脉冲到电极段。 还描述和要求保护其他实施例。

    Thin film transistor with increased doping regions
    142.
    发明授权
    Thin film transistor with increased doping regions 失效
    掺杂区域增加的薄膜晶体管

    公开(公告)号：US08704232B2

    公开(公告)日：2014-04-22

    申请号：US13629531

    申请日：2012-09-27

    Applicant: Apple Inc.

    Inventor： Abbas Jamshidi Roudbari ,  Cheng-Ho Yu ,  Shih Chang Chang ,  Ting-Kuo Chang

    IPC: H01L29/10

    CPC classification number: H01L29/78675 ,  H01L27/1222 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78696

    Abstract: A transistor that may be used in electronic displays to selectively activate one or more pixels. The transistor includes a metal layer, a silicon layer deposited on at least a portion of the metal layer, the silicon layer includes an extension portion that extends a distance past the metal layer, and at least three lightly doped regions positioned in the silicon layer. The at least three lightly doped regions have a lower concentration of doping atoms than other portions of the silicon layer forming the transistor.

    Abstract translation: 可用于电子显示器中以选择性地激活一个或多个像素的晶体管。 晶体管包括金属层，沉积在金属层的至少一部分上的硅层，硅层包括延伸距离金属层的延伸部分和位于硅层中的至少三个轻掺杂区域。 所述至少三个轻掺杂区域具有比形成晶体管的硅层的其它部分更低的掺杂原子浓度。

    Connection to First Metal Layer in Thin Film Transistor Process
    143.
    发明申请
    Connection to First Metal Layer in Thin Film Transistor Process 有权
    连接薄膜晶体管工艺中的第一金属层

    公开(公告)号：US20140084292A1

    公开(公告)日：2014-03-27

    申请号：US13629547

    申请日：2012-09-27

    Applicant: APPLE INC.

    Inventor： Ming-Chin Hung ,  Young Bae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

    IPC: H01L29/786 ,  H01L21/20

    CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606

    Abstract: A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.

    Abstract translation: 一种在半导体流程中连接到第一金属层的方法。 公开的实施例通过蚀刻通孔的第一部分通过蚀刻停止层和栅极绝缘层连接到第一金属层，以到达第一金属层，沉积第二金属层，使得第二金属层与第一金属层接触， 所述通孔，并且通过第一钝化层和有机层蚀刻所述通孔的第二部分以到达所述第二金属层。

    Back Channel Etch Metal-Oxide Thin Film Transistor and Process
    144.
    发明申请
    Back Channel Etch Metal-Oxide Thin Film Transistor and Process 有权
    背沟道蚀刻金属氧化物薄膜晶体管和工艺

    公开(公告)号：US20130337596A1

    公开(公告)日：2013-12-19

    申请号：US13913373

    申请日：2013-06-07

    Applicant: Apple Inc.

    Inventor： Ming-Chin Hung ,  Shih Chang Chang ,  Vasudha Gupta ,  Young Bae Park

    IPC: H01L51/56

    CPC classification number: H01L51/56 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L2227/323

    Abstract: A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.

    Abstract translation: 提供了一种用于制造有机发光二极管（OLED）显示器的方法。 该方法包括形成包括第一金属层和第二金属层的薄膜晶体管（TFT）基板。 该方法还包括在第二金属层上沉积第一钝化层，以及在沟道区域和存储电容器区域上形成第三金属层。 第三金属层被配置为连接到第二金属层的第一部分，其被构造成通过栅极绝缘体和第一钝化层在第一通孔中连接到第一金属层。 该方法还包括在第三金属层上沉积第二钝化层，以及在第二钝化层上形成阳极层。 阳极被配置为连接到第三金属层的第二部分，其被配置为在第一钝化层和第二钝化层的第二通孔中连接到第二金属层。

    Common bus design for a TFT-LCD display
    145.
    发明授权
    Common bus design for a TFT-LCD display 有权
    普通总线设计用于TFT-LCD显示屏

    公开(公告)号：US08497967B2

    公开(公告)日：2013-07-30

    申请号：US13656580

    申请日：2012-10-19

    Applicant: Apple Inc.

    Inventor： Shih Chang Chang ,  John Z. Zhong

    IPC: G02F1/1343

    CPC classification number: G02F1/136286 ,  G02F2001/134345 ,  G02F2001/134372 ,  G02F2201/40

    Abstract: Embodiments of the present invention provide for a FFS TFT LCD with a high refresh rate without limiting the aperture of individual pixels. More specifically, embodiments of the invention provide for the use of common bus lines to reduce the effective resistance of the common electrode and to therefore allow for higher refresh rates of the display. Furthermore, the common bus lines can be positioned in such a manner so that they do not further reduce the aperture of the display. More specifically, the common bus lines can be positioned above or below existing elements of the display that are already opaque. Thus, adding the common bus lines need not reduce the aperture. The above can be achieved by, for example, placing the common bus lines above or below existing non-transparent lines, such as gate lines or data lines.

    Abstract translation: 本发明的实施例提供了一种具有高刷新率的FFS TFT LCD，而不限制各个像素的孔径。 更具体地，本发明的实施例提供了使用公共总线线路来降低公共电极的有效电阻并因此允许显示器的更高刷新率。 此外，公共总线线路可以以这样的方式定位，使得它们不会进一步减小显示器的孔径。 更具体地，公共总线可以位于显示器的已经不透明的现有元件的上方或下方。 因此，添加公共总线不需要减小孔径。 上述可以通过例如将公共总线放置在现有的不透明线路之上或之下，例如栅极线或数据线来实现。

    Display With Light-Emitting Diodes
    147.
    发明申请
    Display With Light-Emitting Diodes 有权

    公开(公告)号：US20250022423A1

    公开(公告)日：2025-01-16

    申请号：US18904525

    申请日：2024-10-02

    Applicant: Apple Inc.

    Inventor： Chin-Wei Lin ,  Hung Sheng Lin ,  Shih Chang Chang ,  Shinya Ono

    IPC: G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/12 ,  H01L29/786

    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

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