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141.发明申请公开(公告)号：US20080220381A1
公开(公告)日：2008-09-11
申请号：US12071804
申请日：2008-02-26
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided.The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（1）表示的重复单元的聚合物。
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公开(公告)号：US07368218B2
公开(公告)日：2008-05-06
申请号：US11101591
申请日：2005-04-08
申请人： Jun Hatakeyama , Tatsushi Kaneko
发明人： Jun Hatakeyama , Tatsushi Kaneko
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111 , Y10S430/115
摘要： A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development. The composition also has excellent dry etching resistance.
摘要翻译： 使用由具有桥环内酯基的（甲基）丙烯酸酯与具有酸性离去基团的具有六氟醇基的（甲基）丙烯酸酯）组合获得的聚合物作为基础树脂，以配制正极抗蚀剂组合物 能量辐射和发展，显示出高灵敏度，高分辨率和最小的线边缘粗糙度由于开发过程中控制膨胀。 该组合物还具有优异的耐干蚀刻性。
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143.发明申请Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process 有权具有可聚合阴离子的锍盐，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US20080102407A1
公开(公告)日：2008-05-01
申请号：US11976564
申请日：2007-10-25
CPC分类号： G03F7/0045 , C08F20/22 , C08F20/38 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use in radiation-sensitive resist compositions is derived.
摘要翻译： 具有可聚合阴离子的锍盐在暴露于高能量辐射下产生强烈的磺酸，从而有助于在化学增强的抗蚀剂组合物中有效地分裂酸不稳定基团。 作为衍生用于辐射敏感性抗蚀剂组合物的基础树脂的单体是有用的。
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144.发明申请公开(公告)号：US20080038662A1
公开(公告)日：2008-02-14
申请号：US11822805
申请日：2007-07-10
申请人： Jun Hatakeyama , Toshihiko Fujii , Takanobu Takeda
发明人： Jun Hatakeyama , Toshihiko Fujii , Takanobu Takeda
CPC分类号： G03F7/091
摘要： There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.
摘要翻译： 公开了用于光刻的多层抗蚀剂膜的底部抗蚀剂层组合物，其包含至少包含由以下通式（1）表示的重复单元的聚合物。 因此，可以提供一种底部抗蚀剂层组合物，其在暴露于较短波长时表现出最佳n值和k值，在蚀刻基板的条件下具有优异的耐蚀刻性，并且有希望形成用于多层抗蚀剂工艺的底部抗蚀剂层 例如含硅双层抗蚀剂工艺或使用含硅中间抗蚀剂层的三层抗蚀剂工艺。
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公开(公告)号：US07303855B2
公开(公告)日：2007-12-04
申请号：US10952834
申请日：2004-09-30
申请人： Jun Hatakeyama , Satoshi Watanabe
发明人： Jun Hatakeyama , Satoshi Watanabe
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： An undercoat-forming material comprising a novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has an absorptivity coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2. BCl3 gases for substrate processing.
摘要翻译： 包含具有芴或四氢螺二茚结构的酚醛清漆树脂的底涂层形成材料，任选与具有抗反射效果的中间层组合的有机溶剂，酸产生剂和交联剂具有足以提供抗反射效果的吸收系数 至少200nm的厚度和高耐蚀刻性，如通过CF 4 / CH 3 3和Cl 2 2的缓蚀刻速率所证明的。 BCl 3 3气体用于基板处理。
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146.发明授权Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method 有权光生酸化合物，化学放大阳性抗蚀剂材料和图案形成方法公开(公告)号：US07303852B2
公开(公告)日：2007-12-04
申请号：US10375773
申请日：2003-02-27
CPC分类号： G03F7/0045 , C07C311/48 , C07D333/46 , C07D335/02 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.
摘要翻译： 本发明提供了一种高分辨率抗蚀剂材料，其包括相对于300nm以下的高能量射线具有高灵敏度和高分辨率的酸发生剂，具有小的线边缘粗糙度，并且具有优异的热稳定性和储存稳定性 ，并提供使用该抗蚀剂材料的图案形成方法。 本发明还提供了一种化学放大正性抗蚀剂材料，其包括基础树脂，酸产生剂和其中酸产生剂产生含氟基团的亚烷基亚胺酸的溶剂，并且提供了图案形成方法，包括将抗蚀剂材料施加到 基板，通过热处理后的光掩模进行曝光于波长为300nm以下的高能射线的工序，以及通过热处理后的显影液进行显影的工序。
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公开(公告)号：US07255973B2
公开(公告)日：2007-08-14
申请号：US11101568
申请日：2005-04-08
申请人： Jun Hatakeyama , Tatsushi Kaneko
发明人： Jun Hatakeyama , Tatsushi Kaneko
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.
摘要翻译： 使用包含衍生自外型酯的单体和由具有两个六氟异丙醇基团的酯衍生的单元的聚合物作为基础树脂，以配制正型抗蚀剂组合物，其通过光刻曝光和显影时通过溶胀使线边缘粗糙度最小化 在开发过程中和残渣发育后，粘附性得到改善。
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公开(公告)号：US07232638B2
公开(公告)日：2007-06-19
申请号：US10427939
申请日：2003-05-02
IPC分类号： G03F7/004
CPC分类号： G03F7/0758 , G03F7/0397
摘要： Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.
摘要翻译： 包含通过使含硅单体与LogP或cLogP值高达0.6的极性单体和任选的羟基苯乙烯，光酸产生剂和有机溶剂共聚获得的聚合物的化学扩增的正性抗蚀剂组合物对高能辐射敏感， 在小于300nm的波长下具有高灵敏度和分辨率，并且改善了耐氧等离子体蚀刻的耐受性。
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公开(公告)号：US07179581B2
公开(公告)日：2007-02-20
申请号：US10849476
申请日：2004-05-20
申请人： Takeru Watanabe , Jun Hatakeyama
发明人： Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： Resist compositions comprising nitrogen heterocyclic compounds having a pyrrole or nitrogen-bearing 5-membered ring structure and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.
摘要翻译： 包含具有吡咯或含氮五元环结构和极性官能团的氮杂环化合物的抗蚀剂组合物具有优异的分辨率和优异的聚焦余量，并且可用于使用电子束或深紫外光的微细加工。
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公开(公告)号：US07135269B2
公开(公告)日：2006-11-14
申请号：US10765919
申请日：2004-01-29
申请人： Jun Hatakeyama , Takanobu Takeda , Osamu Watanabe
发明人： Jun Hatakeyama , Takanobu Takeda , Osamu Watanabe
CPC分类号： G03F7/0395 , C08F220/28 , C08F222/20 , C08F230/08 , C08F232/08 , G03F7/0397 , G03F7/0758
摘要： A polymer comprising recurring units containing silicon and recurring units having a substituent group of formula (1) is novel wherein A1 is a divalent group selected from furandiyl, tetrahydrofurandiyl and oxanorbornanediyl, R1 and R2 are selected from monovalent C1–C10 hydrocarbon groups, or R1 and R2 taken together may form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent C1–C10 hydrocarbon group which may contain a hetero atom. The polymer is useful as a base resin to formulate a resist composition which is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength of less than 300 nm as well as satisfactory oxygen plasma etching resistance.
摘要翻译： 含有硅的重复单元和具有式（1）的取代基的重复单元的聚合物是新颖的，其中A 1是选自呋喃二基，四氢呋喃基和氧杂甘露二烷基的二价基团，R 1， SUP>和R 2选自单价C 1 -C 10烃基或R 1和R 2 一起可以与碳原子一起形成脂族烃环，R 3是氢或一价C 1 -C 1 - 10个可以含有杂原子的烃基。 聚合物可用作基础树脂以配制对高能辐射敏感的抗蚀剂组合物，并且在小于300nm的波长下具有优异的灵敏度和分辨率以及满意的氧等离子体耐蚀刻性。
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