公开(公告)号：US09537045B2

公开(公告)日：2017-01-03

申请号：US14796421

申请日：2015-07-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hun Heo ,  Yeo Jin Yoon ,  Joo Won Choi ,  Joon Hee Lee ,  Chang Yeon Kim ,  Su Young Lee

IPC: H01L29/20 ,  H01L33/00 ,  H01L27/15 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.

Abstract translation: 制造半导体器件的方法包括在氮化镓衬底上形成包括掩模区域和开放区域的绝缘图案，生长氮化镓半导体层以覆盖绝缘图案，以及图案化半导体层以形成分离的多个半导体堆叠 所述多个半导体堆叠通过所述绝缘图案与所述氮化镓衬底电隔离。

公开(公告)号：US09202968B2

公开(公告)日：2015-12-01

申请号：US14083856

申请日：2013-11-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Tae Kyoon Kim ,  Tae Hyuk Im

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/0079

Abstract: Provided is a method of fabricating a vertical light emitting diode (LED). Initially, a semiconductor structure layer including an active layer is formed on a front surface of a growth substrate. A conductive support substrate is formed on the semiconductor structure layer. A rear surface of the growth substrate is abraded to reduce the thickness of the growth substrate. The rear surface of the growth substrate whose thickness is reduced due to the abrasion is dry etched to remove the growth substrate.

Abstract translation: 提供一种制造垂直发光二极管（LED）的方法。 首先，在生长衬底的前表面上形成包括有源层的半导体结构层。 在半导体结构层上形成导电支撑基板。 研磨生长衬底的后表面以减小生长衬底的厚度。 干燥蚀刻由于磨损而使厚度减小的生长衬底的后表面以除去生长衬底。

公开(公告)号：US20140367722A1

公开(公告)日：2014-12-18

申请号：US14368268

申请日：2012-12-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk Im ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。