公开(公告)号：US07433037B2

公开(公告)日：2008-10-07

申请号：US11458934

申请日：2006-07-20

Applicant: Guoheng Zhao ,  Kenneth P. Gross ,  Rodney Smedt ,  Mehrdad Nikoonahad

Inventor： Guoheng Zhao ,  Kenneth P. Gross ,  Rodney Smedt ,  Mehrdad Nikoonahad

IPC: G01B11/04 ,  G01J4/00

CPC classification number: G01N21/21 ,  G01B11/00 ,  G01N21/4788 ,  G01N21/956

Abstract: A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals. At least one of the orientations of the plane of polarization is substantially stationary when the detection takes place. To have as small a footprint as possible, one employs an optical device that includes a first element directing a polychromatic beam of electromagnetic radiation to the structure and a second optical element collecting radiation from the structure where the two elements form an integral unit or are attached together to form an integrated unit. To reduce the footprint, the measurement instrument and the wafer are both moved. In one embodiment, both the apparatus and the wafer undergo translational motion transverse to each other. In a different arrangement, one of the two motions is translational and the other is rotational. Any one of the above-described embodiments may be included in an integrated processing and detection apparatus which also includes a processing system processing the sample, where the processing system is responsive to the output of any one of the above embodiments for adjusting a processing parameter.

公开(公告)号：US20080226157A1

公开(公告)日：2008-09-18

申请号：US11724905

申请日：2007-03-15

Applicant: Stanley E. Stokowski

Inventor： Stanley E. Stokowski

IPC: G06K9/00

CPC classification number: G03F7/705

Abstract: Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.

Abstract translation: 公开了用于在掩模版上发现光刻显着缺陷的装置和方法。 通常，使用检查装置获得所述掩模版的至少一对相关强度图像。 获得强度图像，使得每个图像对于掩模版经历不同的焦点设置，使得在图像的两个焦点值之间存在恒定的聚焦偏移。 然后分析这些图像以获得掩模版的透射函数。 然后将该透射函数输入到光刻系统的模型（例如，步进器，扫描仪或其它相关的光刻系统）中，以产生标线图案的空中图像。 然后可以将产生的空间图像输入到光致抗蚀剂模型，以产生对应于使用掩模版印刷到基板上的图像图案的“抗蚀剂建模图像”。 然后将该抗蚀剂建模的图像与参考图像进行比较以获得缺陷信息。 特别地，由于引入了光刻工具和光致抗蚀剂模型，该缺陷信息涉及光刻显着的缺陷。

公开(公告)号：US20080204678A1

公开(公告)日：2008-08-28

申请号：US11690813

申请日：2007-03-24

Applicant: Tony DiBiase ,  Mei H. Sun ,  Mark Wiltse

Inventor： Tony DiBiase ,  Mei H. Sun ,  Mark Wiltse

IPC: G03B27/52 ,  G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70633

Abstract: A method for reducing overlay error in a photolithographic process, by providing a substrate having a permanent layer with a first pattern disposed therein, coating the substrate with photoresist, exposing the photoresist to a second pattern, while measuring temperatures at a plurality of different first positions across the substrate, developing the second pattern in the photoresist, measuring overlay errors between the first and second patterns at a plurality of different second positions across the substrate, correlating the overlay errors with temperatures by position on the substrate, determining any relationship indicated between the correlated overlay errors and temperatures, and adjusting at least one temperature controlling aspect of the photolithographic process in response to any relationship determined.

Abstract translation: 一种通过提供具有设置在其中的具有第一图案的永久层的基板的衬底，用光致抗蚀剂涂覆衬底，将光致抗蚀剂暴露于第二图案，同时测量多个不同的第一位置处的温度的方法，用于减小光刻工艺中的覆盖误差的方法 跨越衬底，在光致抗蚀剂中显影第二图案，测量穿过衬底的多个不同第二位置处的第一和第二图案之间的重叠误差，将重叠误差与衬底上的位置的温度相关联，确定在衬底上指示的任何关系 相关重叠误差和温度，以及响应于确定的任何关系调整光刻工艺的至少一个温度控制方面。

公开(公告)号：US20080192221A1

公开(公告)日：2008-08-14

申请号：US12101757

申请日：2008-04-11

Applicant: Walter Mieher ,  Thaddeus G. Dziura ,  Ady Levy ,  Chris A. Mack

Inventor： Walter Mieher ,  Thaddeus G. Dziura ,  Ady Levy ,  Chris A. Mack

IPC: G03B27/52 ,  G01J3/00

CPC classification number: G03F7/70625 ,  G03F7/70641

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract translation: 公开了一种用于确定光刻系统的一个或多个工艺参数设置的方法。

公开(公告)号：US07394069B1

公开(公告)日：2008-07-01

申请号：US11280829

申请日：2005-11-15

Applicant: Kirk J. Bertsche

Inventor： Kirk J. Bertsche

IPC: G21K1/00

CPC classification number: H01J37/28 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1474 ,  H01J37/3174 ,  H01J2237/1501 ,  H01J2237/1508 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/24485

Abstract: One embodiment relates to a charged-particle beam apparatus. The apparatus includes at least a source for generating the charged-particle beam, a first deflector, and a second deflector. The first deflector is configured to scan the charged-particle beam in a first dimension. The second deflector is configured to deflect the scanned beam such that the scanned beam impinges telecentrically (perpendicularly) upon a surface of a target substrate. Other embodiments are also disclosed.

Abstract translation: 一个实施例涉及带电粒子束装置。 该装置至少包括用于产生带电粒子束的源，第一偏转器和第二偏转器。 第一偏转器被配置成在第一维度扫描带电粒子束。 第二偏转器被配置为使扫描的光束偏转，使得扫描的光束以中心（垂直）方向照射到目标衬底的表面上。 还公开了其他实施例。

公开(公告)号：US20080106740A1

公开(公告)日：2008-05-08

申请号：US11974033

申请日：2007-10-10

Applicant: Zongqiang Yu

Inventor： Zongqiang Yu

IPC: G01N21/00

CPC classification number: G03F1/84 ,  G01N21/95607

Abstract: A method and apparatus for inspecting patterned substrates, such as photomasks, for unwanted particles and features occurring on the transmissive as well as pattern defects. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate. The defect identification of the substrate is performed using transmitted and reflected light signals from a baseline comparison between two specimens, or one specimen and a database representation, to form a calibration pixelated training set including a non-defective region. This calibration pixilated training set is compared to a transmitted-reflected plot map of the subject specimen to assess surface quality.

Abstract translation: 用于检查诸如光掩模的图案化衬底的方法和装置，用于在透射以及图案缺陷上出现的不期望的颗粒和特征。 透射式衬底由激光器通过由激光扫描系统，单独透射和反射光收集光学器件组成的光学系统照射，并且检测器收集和产生表示由衬底透射和反射的光的信号。 使用来自两个样本之间的基线比较的透射和反射光信号，或一个样本和数据库表示来执行衬底的缺陷识别，以形成包括无缺陷区域的校准像素化训练集。 将该校准像素化训练集与主体样本的透射反射曲线图进行比较，以评估表面质量。

公开(公告)号：US07365834B2

公开(公告)日：2008-04-29

申请号：US10874861

申请日：2004-06-22

Applicant: Isabella Lewis ,  Mehdi Vaez-Iravani

Inventor： Isabella Lewis ,  Mehdi Vaez-Iravani

IPC: G01N21/00

CPC classification number: G01N21/95623 ,  G01N21/474 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501

Abstract: A surface inspection of the system applies a first oblique illumination beam and may also apply a second illumination beam to illuminate a surface either sequentially or simultaneously. Radiation reflected or scattered is collected by preferably three collection channels and detected by three corresponding detector arrays, although a different number of channels and detector arrays may be used. One or both illumination beams are focused to a line on the surface to be inspected and each line is imaged onto one or more detector arrays in the up to three or more detection and collection channels. Relative motion is caused between the lines and the surface inspected in a direction perpendicular to the lines, thereby increasing throughput while retaining high resolution and sensitivity. The same detection channels may be employed by detecting scattered or reflected radiation from both illumination beams. Fourier filters may be employed to filter out diffraction at one or more different spatial frequencies.

Abstract translation: 系统的表面检查应用第一倾斜照明光束并且还可以施加第二照明光束以顺序地或同时地照射表面。 尽管可以使用不同数量的通道和检测器阵列，但优选地通过三个收集通道收集反射或散射的辐射并且由三个对应的检测器阵列检测。 一个或两个照明光束被聚焦到要检查的表面上的线，并且每条线被成像到多达三个或更多个检测和收集通道中的一个或多个检测器阵列上。 在垂直于线路的方向上在线和表面之间产生相对运动，从而在保持高分辨率和灵敏度的同时增加产量。 可以通过检测来自两个照明光束的散射或反射辐射来采用相同的检测通道。 可以使用傅立叶滤波器来滤出在一个或多个不同空间频率处的衍射。

公开(公告)号：US20080077894A1

公开(公告)日：2008-03-27

申请号：US11857301

申请日：2007-09-18

Applicant: Michael Adel ,  Ellis Chang

Inventor： Michael Adel ,  Ellis Chang

IPC: G06F17/50

CPC classification number: G03F7/70633 ,  G03F7/70533

Abstract: The invention is a method for generating a design rule map having a spatially varying overlay error budget. Additionally, the spatially varying overlay error budget can be employed to determine if wafers are fabricated in compliance with specifications. In one approach a design data file that contains fabrication process information and reticle information is processed using design rules to obtain a design map with a spatially varying overlay error budget that defines a localized tolerance to overlay errors for different spatial locations on the design map. This spatially varying overlay error budget can be used to disposition wafers. For example, overlay information obtained from measured metrology targets on a fabricated wafer are compared with the spatially varying overlay error budget to determine if the wafer overlay satisfies the required specification.

Abstract translation: 本发明是一种用于生成具有空间变化的重叠误差预算的设计规则图的方法。 此外，可以采用空间上可变的重叠误差预算来确定晶片是否符合规格制造。 在一种方法中，使用设计规则处理包含制造过程信息和掩模版信息的设计数据文件，以获得具有空间上变化的重叠误差预算的设计图，该设计图定义了设计图上不同空间位置的重叠误差的局部容差。 这种空间上可变的重叠误差预算可用于配置晶片。 例如，将从制造的晶片上的测量的测量目标获得的覆盖信息与空间上变化的重叠误差预算进行比较，以确定晶片覆盖是否满足要求的规范。

公开(公告)号：US07345751B2

公开(公告)日：2008-03-18

申请号：US11268215

申请日：2005-11-07

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/00

CPC classification number: G01B11/0616 ,  G01N21/9501

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer. The system includes a processor for determining height. In addition to measuring the height the system can measure film thickness and defects through the measurement of the phase shift of optical signals. An optical profilometer is described which can measure topography on thin film disks, optical substrates or silicon wafers and whose output is independent of the reflectivity of the substrate. This material independent optical profilometer uses a retro-reflector to achieve reflectivity independence and to increase the height sensitivity to 8 times the height of the surface. The reflectivity independent optical profilometer achieves perfect cancellation of the slope of the surface while measuring the topography of the substrate.

Abstract translation: 用于测量薄膜盘或硅晶片的缺陷，膜厚度，污染物，颗粒和高度的系统和方法。 该系统包括用于确定高度的处理器。 除测量高度之外，系统可以通过测量光信号的相移来测量膜厚度和缺陷。 描述了可以测量薄膜盘，光学衬底或硅晶片上的形貌并且其输出与衬底的反射率无关的光学轮廓仪。 该材料独立的光学轮廓仪使用后向反射镜实现反射率独立性，并将高度灵敏度提高到表面高度的8倍。 反射率独立的光学轮廓仪在测量衬底的形貌的同时实现了表面斜率的完美消除。

公开(公告)号：US20080024766A1

公开(公告)日：2008-01-31

申请号：US11830798

申请日：2007-07-30

Applicant: Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher Bevis ,  Mark Ghinovker

Inventor： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher Bevis ,  Mark Ghinovker

IPC: G01N21/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.

Abstract translation: 公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。 成像光学系统用于从样本上的多个周期性目标测量多个测量的光信号。 目标各自具有第一层中的第一结构和第二层中的第二结构。 在第一和第二结构之间有预定义的偏移。 然后使用散射测量覆盖技术来分析周期性目标的测量光信号和周期性目标的第一和第二结构的预定偏移量，从而确定周期性目标的第一和第二结构之间的重叠误差。