公开(公告)号：US20220343956A1

公开(公告)日：2022-10-27

申请号：US17705039

申请日：2022-03-25

Applicant: Rambus Inc.

Inventor： Ian P. Shaeffer ,  Bret Stott ,  Benedict C. Lau

IPC: G11C7/10 ,  G06F13/16 ,  G06F12/00

Abstract: A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.

公开(公告)号：US11474959B2

公开(公告)日：2022-10-18

申请号：US17228506

申请日：2021-04-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Craig E. Hampel

IPC: G06F13/16 ,  G11C7/10 ,  G11C5/04 ,  G11C11/4096 ,  G06F13/40 ,  G11C11/408 ,  G11C11/4093

Abstract: A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.

公开(公告)号：US20220327021A1

公开(公告)日：2022-10-13

申请号：US17734464

申请日：2022-05-02

Applicant: Rambus Inc.

Inventor： Michael Raymond MILLER ,  Stephen MAGEE ,  John Eric LINSTADT

IPC: G06F11/10 ,  G06F3/06

Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.

公开(公告)号：US11469927B2

公开(公告)日：2022-10-11

申请号：US17110530

申请日：2020-12-03

Applicant: Rambus Inc.

Inventor： Hae-Chang Lee ,  Brian S. Leibowitz ,  Jade M. Kizer ,  Thomas H. Greer ,  Akash Bansal

IPC: H04L25/03 ,  H04B1/12

Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.

公开(公告)号：US11468928B2

公开(公告)日：2022-10-11

申请号：US17222388

申请日：2021-04-05

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C7/22 ,  G11C29/02 ,  G11C11/4063 ,  G11C5/04 ,  G11C11/4097 ,  G11C7/18 ,  G11C5/02

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A memory controller sends register values, for storage in a plurality of registers of a respective memory device. The register values include register values that represent one or more impedance values of on-die termination (ODT) impedances to apply to the respective inputs of the respective memory device that receive the CA signals, and one or more register values to selectively enable application of a chip select ODT impedance to the chip select input of the respective memory device.

公开(公告)号：US11450374B2

公开(公告)日：2022-09-20

申请号：US16953196

申请日：2020-11-19

Applicant: Rambus Inc.

Inventor： Jade M. Kizer ,  Sivakumar Doraiswamy ,  Benedict Lau

IPC: G11C7/00 ,  G11C11/4076 ,  G06F13/16 ,  G06F13/40 ,  G11C8/18 ,  G11C7/22 ,  G11C11/4063 ,  G11C11/4072 ,  G11C11/4096

Abstract: An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal.

公开(公告)号：US20220291992A1

公开(公告)日：2022-09-15

申请号：US17721735

申请日：2022-04-15

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John E. Linstadt ,  Liji Gopalakrishnan

IPC: G06F11/10 ,  G06F3/06

Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

公开(公告)号：US20220291985A1

公开(公告)日：2022-09-15

申请号：US17728621

申请日：2022-04-25

Applicant: Rambus Inc.

Inventor： Yuanlong Wang ,  Frederick A. Ware

IPC: G06F11/07 ,  H03M13/09 ,  H03M13/29 ,  G06F3/06 ,  G06F11/10 ,  H03M13/00 ,  G06F13/42 ,  H04L1/00 ,  H04L1/08 ,  H04L1/18 ,  G06F11/14

Abstract: A controller includes a link interface that is to couple to a first link to communicate bi-directional data and a second link to transmit unidirectional error-detection information. An encoder is to dynamically add first error-detection information to at least a portion of write data. A transmitter, coupled to the link interface, is to transmit the write data. A delay element is coupled to an output from the encoder. A receiver, coupled to the link interface, is to receive second error-detection information corresponding to at least the portion of the write data. Error-detection logic is coupled to an output from the delay element and an output from the receiver. The error-detection logic is to determine errors in at least the portion of the write data by comparing the first error-detection information and the second error-detection information, and, if an error is detected, is to assert an error condition.

公开(公告)号：US20220284947A1

公开(公告)日：2022-09-08

申请号：US17702475

申请日：2022-03-23

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  James E. Harris

IPC: G11C11/4093 ,  G11C5/04 ,  G11C5/06 ,  G11C8/12 ,  G11C7/22

Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. Each memory device supports an access mode and a low-power mode, the latter used to save power for devices that are not immediately needed. The module provides granular power management using a chip-select decoder that decodes chip-select signals from the memory controller into power-state signals that determine which of the memory devices are in which of the modes. Devices can thus be brought out of the low-power mode in relatively small numbers, as needed, to limit power consumption.

公开(公告)号：US20220283743A1

公开(公告)日：2022-09-08

申请号：US17637724

申请日：2020-08-25

Applicant: Rambus Inc.

Inventor： Torsten Partsch

IPC: G06F3/06

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) dynamic random access memory (DRAM) device is disclosed. The IC DRAM device includes memory core circuitry organized into bank groups of storage cells, each bank group accessible via a corresponding bank group address. A command/address (C/A) interface receives C/A information defining a joint command. The joint command includes information specifying a first memory access operation, a first bank group address associated with the first memory access operation, and a second memory access operation to be automatically directed to the first bank group address.