公开(公告)号：US20130049106A1

公开(公告)日：2013-02-28

申请号：US13523841

申请日：2012-06-14

Applicant: Wei-Chieh Lin

Inventor： Wei-Chieh Lin

IPC: H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/7813 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7831

Abstract: The present invention provides a bidirectional semiconductor device including a semiconductor substrate having a first conductive type, a first doped base region and a second doped base region having a second conductive type, and a gate insulating layer. The semiconductor substrate has a first trench, and the first doped base region and the second doped base region are respectively disposed in the semiconductor substrate at two sides of the first trench. The gate insulating layer covers a surface of the first trench, and the gate insulating layer has a first part adjacent to the first doped base region, a second part adjacent to the second doped base region, and a third part disposed at a corner between a bottom and a sidewall of the first trench. A thickness of the first part and a thickness of the second part are less than a thickness of the third part.

Abstract translation: 本发明提供了一种双向半导体器件，其包括具有第一导电类型，第一掺杂基极区域和具有第二导电类型的第二掺杂基极区域的半导体衬底和栅极绝缘层。 半导体衬底具有第一沟槽，并且第一掺杂基极区域和第二掺杂基极区域分别设置在第一沟槽的两侧的半导体衬底中。 栅极绝缘层覆盖第一沟槽的表面，并且栅极绝缘层具有与第一掺杂基极区相邻的第一部分，与第二掺杂基极区相邻的第二部分，以及设置在第二部分 底部和第一沟槽的侧壁。 第一部分的厚度和第二部分的厚度小于第三部分的厚度。

公开(公告)号：US20130043513A1

公开(公告)日：2013-02-21

申请号：US13213211

申请日：2011-08-19

Applicant: Liang-An HUANG ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

Inventor： Liang-An HUANG ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

IPC: H01L27/06 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76232

Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Abstract translation: 浅沟槽隔离结构的制造方法包括以下步骤。 首先，提供衬底，其中在衬底中限定高电压器件区域。 然后，执行第一蚀刻工艺以部分地去除衬底，从而在高压器件区域中形成初步浅沟槽。 然后，进行第二蚀刻处理以进一步去除对应于初步浅沟槽的衬底，从而在高电压器件区域中形成第一浅沟槽。 之后，在第一浅沟槽中填充电介质材料，从而形成第一浅沟槽隔离结构。

公开(公告)号：US20130027192A1

公开(公告)日：2013-01-31

申请号：US13245626

申请日：2011-09-26

Applicant: Tung-An CHEN ,  Chieh-Feng LEE ,  Deng-Shan JIAN ,  Wen-Chieh LIN

Inventor： Tung-An CHEN ,  Chieh-Feng LEE ,  Deng-Shan JIAN ,  Wen-Chieh LIN

IPC: G08C19/16

CPC classification number: H02P23/0068 ,  H02P23/22 ,  H02P23/24

Abstract: A motor control method comprises: inputting a PWM signal into a control unit for the control unit to obtain a direction command and a speed command by an identification rule, and generating a control signal according to the direction and speed commands by the control unit; and generating a driving signal according to the control signal by the driving unit for driving a motor to operate according to the direction and speed commands.

Abstract translation: 一种电动机控制方法，包括：将PWM信号输入到用于控制单元的控制单元中，以通过识别规则获得方向指令和速度指令，并根据控制单元的方向和速度指令产生控制信号; 以及根据驱动单元根据控制信号产生用于驱动马达根据方向和速度命令进行操作的驱动信号。

公开(公告)号：US20120325019A1

公开(公告)日：2012-12-27

申请号：US13279664

申请日：2011-10-24

Applicant: Yio-Wha Shau ,  Arvin Huang-Te Li ,  Gaung-Hui Gu ,  Bai-Kuang Hwang ,  Jen-Chieh Lin

Inventor： Yio-Wha Shau ,  Arvin Huang-Te Li ,  Gaung-Hui Gu ,  Bai-Kuang Hwang ,  Jen-Chieh Lin

IPC: G01L1/10 ,  G01L1/12

CPC classification number: A61B5/6807 ,  A61B5/1036 ,  A61B5/1117 ,  A61B5/4029 ,  A61B2562/0252 ,  A61B2562/066 ,  G01L1/122

Abstract: A force sensing device and a force sensing system are provided. The force sensing device comprises at least one magnetic material layer and a force sensing layer which can move with respect to each other. The force sensing layer comprises two sensing elements. The first sensing element, disposed along a first axis of the magnetic material layer, generates a sensing signal varying with a first lateral force applied on the force sensing device. The first lateral force enables the first sensing element to move relatively with respect to the magnetic material layer along the first axis. The second sensing element, disposed along a second axis of the magnetic material layer, generates a sensing signal varying with a second lateral force applied on the force sensing device. The second lateral force enables the second sensing element to move relatively with respect to the magnetic material layer along the second axis.

Abstract translation: 提供力传感装置和力传感系统。 力感测装置包括至少一个可相对于彼此移动的磁性材料层和力感测层。 力感测层包括两个感测元件。 沿着磁性材料层的第一轴线设置的第一感测元件产生随施加在力感测装置上的第一横向力而变化的感测信号。 第一横向力使得第一感测元件相对于磁性材料层沿着第一轴线相对移动。 沿着磁性材料层的第二轴线设置的第二传感元件产生随施加在力传感器上的第二横向力而改变的传感信号。 第二横向力允许第二感测元件相对于磁性材料层沿着第二轴线相对移动。

公开(公告)号：US08319284B2

公开(公告)日：2012-11-27

申请号：US12839426

申请日：2010-07-20

Applicant: Wei-Chieh Lin ,  Ho-Tai Chen ,  Jia-Fu Lin ,  Po-Hsien Li

Inventor： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jia-Fu Lin ,  Po-Hsien Li

IPC: H01L29/66

CPC classification number: H01L29/0847 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7816 ,  H01L29/7835

Abstract: A laterally diffused metal-oxide-semiconductor device includes a substrate, a gate dielectric layer, a gate polysilicon layer, a source region, a drain region, a body region, a first drain contact plug, a source polysilicon layer, an insulating layer, and a source metal layer. The source polysilicon layer disposed on the gate dielectric layer above the drain region can serve as a field plate to enhance the breakdown voltage and to increase the drain-to-source capacitance. In addition, the first drain contact plug of the present invention can reduce the drain-to-source on-resistance and the horizontal extension length.

Abstract translation: 横向扩散的金属氧化物半导体器件包括衬底，栅极电介质层，栅极多晶硅层，源极区域，漏极区域，体区域，第一漏极接触插塞，源极多晶硅层，绝缘层， 和源极金属层。 设置在漏极区域上的栅极电介质层上的源极多晶硅层可以用作场板，以增强击穿电压并增加漏极 - 源极电容。 此外，本发明的第一漏极接触插塞可以减小漏极 - 源极导通电阻和水平延长长度。

公开(公告)号：US20120287140A1

公开(公告)日：2012-11-15

申请号：US13420587

申请日：2012-03-14

Applicant: Ming-Chieh Lin ,  Ying-Yu Kuo ,  Wei-Ying Tu

Inventor： Ming-Chieh Lin ,  Ying-Yu Kuo ,  Wei-Ying Tu

IPC: G09G3/36 ,  G06F13/14

CPC classification number: G09G3/2096 ,  G09G2310/08 ,  G09G2320/0252 ,  G09G2360/127 ,  G09G2370/10

Abstract: A display interface circuit includes a physical layer circuit for receiving and modulating an original data signal and an original clock signal, a frame buffer for storing and outputting the data signal according to the clock signal and a command signal, a display serial interface for transmitting the data signal and the clock signal through packetization, a configuration register for generating the command signal according to an asynchronous clock signal and the data signal, and an asynchronous delay circuit for adjusting a clock latency that the clock signal takes to be sent to the configuration register to generate the asynchronous clock signal.

Abstract translation: 显示接口电路包括用于接收和调制原始数据信号和原始时钟信号的物理层电路，用于根据时钟信号和命令信号存储和输出数据信号的帧缓冲器，用于发送 数据信号和通过分组化的时钟信号，用于根据异步时钟信号和数据信号产生命令信号的配置寄存器，以及用于调整时钟信号需要发送到配置寄存器的时钟延迟的异步延迟电路 以产生异步时钟信号。

公开(公告)号：US20120257435A1

公开(公告)日：2012-10-11

申请号：US13107441

申请日：2011-05-13

Applicant: Sung-Chieh LIN ,  David YEN ,  Ian CHIU ,  Kuoyuan (Peter) HSU

Inventor： Sung-Chieh LIN ,  David YEN ,  Ian CHIU ,  Kuoyuan (Peter) HSU

IPC: G11C17/16 ,  H01L21/768 ,  H01L23/525

CPC classification number: H01L23/5256 ,  G11C17/10 ,  G11C17/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a non-salicided polysilicon fuse. The non-salicided polysilicon fuse and a programming transistor form a one-time programmable (OTP) memory cell, which can be programmed with a low programming voltage.

Abstract translation: 本文公开的方法和结构的实施例提供了形成和编程非水化多晶硅熔丝的机制。 非水银多晶硅熔丝和编程晶体管形成一个可编程的编程电压低的一次可编程（OTP）存储单元。

公开(公告)号：US20120249491A1

公开(公告)日：2012-10-04

申请号：US13276842

申请日：2011-10-19

Applicant: Pei-Ling Yu ,  Tzu-Chieh Lin ,  Szu-Wen Lin

Inventor： Pei-Ling Yu ,  Tzu-Chieh Lin ,  Szu-Wen Lin

IPC: G09G5/00

CPC classification number: G03B35/16 ,  H04N13/341 ,  H04N2013/403 ,  H04N2013/405

Abstract: Display systems and methods with anti-eavesdropping function are provided. A glass and a display device are coupled. The glass has a right eye viewing component and a left eye viewing component. The display device alternately displays a real picture and a fake picture, and provides at least one control signal to the glass. The control signal triggers the right eye viewing component and the left eye viewing component of the glass to respectively switch between an open state and a closed state.

Abstract translation: 提供了具有防窃听功能的显示系统和方法。 联接玻璃和显示装置。 玻璃具有右眼观察组件和左眼观察组件。 显示装置交替地显示真实图像和假图像，并且向玻璃提供至少一个控制信号。 控制信号触发玻璃的右眼观看组件和左眼观看组件分别在打开状态和关闭状态之间切换。

公开(公告)号：US08278762B2

公开(公告)日：2012-10-02

申请号：US12568027

申请日：2009-09-28

Applicant: Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: H01L23/48

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

Abstract translation: 描述了制造光掩模的方法。 提供光掩模的图形数据，并且对图形数据进行光学邻近校正。 然后使用光学邻近校正对图形数据执行处理规则检查。 当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。 然后根据校正和修复的图形数据形成光掩模的图案。

公开(公告)号：US08270266B2

公开(公告)日：2012-09-18

申请号：US12357409

申请日：2009-01-22

Applicant: Tzu-Chieh Lin ,  Yuh Cheng ,  Chih-Ching Chen ,  Tysh-Bin Liu ,  Yu-Hsuan Lin

Inventor： Tzu-Chieh Lin ,  Yuh Cheng ,  Chih-Ching Chen ,  Tysh-Bin Liu ,  Yu-Hsuan Lin

IPC: G11B7/00

CPC classification number: G11B7/0053 ,  G11B20/10009 ,  G11B20/10027 ,  G11B20/10046 ,  G11B2020/1239 ,  G11B2020/1268 ,  G11B2020/1274 ,  G11B2220/2537

Abstract: A device for detecting wobbles on an optical disc is provided, where the device is utilized for generating a wobble signal according to a plurality of detection signals. The device includes an analog signal processing circuit, a pair of analog-to-digital converters (ADCs), and a digital signal processing circuit. The analog signal processing circuit is arranged to perform analog signal processing on the detection signals to generate a plurality of output signals. In addition, the pair of ADCs are arranged to digitalize the output signals to generate a plurality of digital values. Additionally, the digital signal processing circuit is arranged to perform digital signal processing on the digital values and generate an arithmetic output, where the arithmetic output is utilized for generating the wobble signal or utilized as the wobble signal. An associated method for detecting wobbles on an optical disc is further provided.

Abstract translation: 提供一种用于检测光盘上的摆动的装置，其中该装置用于根据多个检测信号产生摆动信号。 该器件包括模拟信号处理电路，一对模数转换器（ADC）和数字信号处理电路。 模拟信号处理电路被配置为对检测信号执行模拟信号处理以产生多个输出信号。 此外，这对ADC被布置成将输出信号数字化以产生多个数字值。 此外，数字信号处理电路被配置为对数字值执行数字信号处理并产生运算输出，其中运算输出用于产生摆动信号或用作摆动信号。 还提供了一种用于检测光盘上的摆动的相关方法。