公开(公告)号：US20240038673A1

公开(公告)日：2024-02-01

申请号：US18487879

申请日：2023-10-16

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege

IPC: H01L23/538 ,  G11C5/06 ,  H10B12/00

CPC classification number: H01L23/5386 ,  G11C5/06 ,  H10B12/30

Abstract: A microelectronic device comprises a first microelectronic device structure and a second microelectronic device structure attached to the first microelectronic device structure. The first microelectronic device structure comprises memory arrays comprising memory cells comprising access devices and storage node devices, digit lines coupled to the access devices and extending in a first direction to a digit line exit region, and word lines coupled to the access devices and extending in a second direction to a word line exit region. The second microelectronic device structure comprises control logic devices over and in electrical communication with the memory cells. The microelectronic device further comprises contact structures individually in contact with the digit lines in the digit line exit region and in electrical communication with at least some of the control logic devices, at least one of the contact structures comprising a first cross-sectional area at an interface of the first microelectronic device structure and the second microelectronic device structure, and a second cross-sectional area at an interface of one of digit lines, the second cross-sectional area smaller than the first cross-sectional area. Related microelectronic devices, memory devices, electronic systems, and methods are also described.

公开(公告)号：US20240036743A1

公开(公告)日：2024-02-01

申请号：US18379343

申请日：2023-10-12

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Carly M. Wantulok ,  Sumana Adusumilli ,  Chiara Cerafogli

IPC: G06F3/06 ,  G06N20/00

CPC classification number: G06F3/0619 ,  G06F3/0623 ,  G06N20/00 ,  G06F3/0659 ,  G06F3/067 ,  G06F3/0656

Abstract: Methods, apparatuses, and non-transitory machine-readable media associated with data transmission are described. Data transmission management can include receiving, from an edge device via a radio at a first device, instructions associated with data transmission between a second device in communication with the first device and a cloud service in communication with the first device. Data transmission management can also include managing, at the first device and based on the instructions from the edge device, data received from a memory resource of the second device for transmission to the cloud service and data received from the cloud service for transmission to the memory resource of the second device. Data transmission management can further include enabling transmission of some, none, or all of the data between the cloud service and the memory resource of the second device and vice versa based on the management of the data.

公开(公告)号：US11848309B2

公开(公告)日：2023-12-19

申请号：US17344519

申请日：2021-06-10

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege

IPC: H01L23/528 ,  H01L25/065 ,  H01L23/532 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/528 ,  H01L23/53228 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2225/06541

Abstract: A microelectronic device comprises a first microelectronic device structure and a second microelectronic device structure attached to the first microelectronic device structure. The first microelectronic device structure comprises a memory array region comprising a stack structure comprising levels of conductive structures vertically alternating with levels of insulative structures, and staircase structures at lateral ends of the stack structure. The memory array region further comprises vertical stacks of memory cells, at least one of the vertical stacks of memory cells comprising stacked capacitor structures, each stacked capacitor structure comprising capacitor structures vertically spaced from each other by at least a level of the levels of insulative structures, transistor structures, each transistor structure operably coupled to a capacitor structure and to one of the conductive structures of the levels of conductive structures, and a conductive pillar structure vertically extending through the transistor structures.

公开(公告)号：US11837594B2

公开(公告)日：2023-12-05

申请号：US17364476

申请日：2021-06-30

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Kunal R. Parekh

IPC: H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  H10B12/00

CPC classification number: H01L25/18 ,  H01L24/83 ,  H01L25/50 ,  H10B12/036 ,  H10B12/33 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488 ,  H01L2224/83895 ,  H01L2224/83896

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure assembly comprising memory cells, digit lines coupled to the memory cells, contact structures coupled to the digit lines, word lines coupled to the memory cells, additional contact structures coupled to the word lines, and isolation material surrounding the contact structures and the additional contact structures and overlying the memory cells. An additional microelectronic device structure assembly is formed and comprises control logic devices, further contact structures coupled to the control logic devices, and additional isolation material surrounding the further contact structures and overlying the control logic devices. The additional microelectronic device structure assembly is attached to the microelectronic device structure assembly by bonding the additional isolation material to the isolation material and by bonding the further contact structures to the contact structures and the additional contact structures. Microelectronic devices and electronic systems are also described.

公开(公告)号：US20230387072A1

公开(公告)日：2023-11-30

申请号：US17804251

申请日：2022-05-26

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege

IPC: H01L25/065 ,  H01L27/108 ,  H01L27/11553 ,  H01L27/11582 ,  G11C11/408

CPC classification number: H01L25/0652 ,  H01L27/10814 ,  H01L27/11553 ,  H01L27/11582 ,  G11C11/4087

Abstract: A microelectronic device includes a first microelectronic device structure including a memory array region comprising memory cells and a second microelectronic device structure vertically overlying the first microelectronic device structure. The second microelectronic device structure includes control logic devices configured to effectuate at least a portion of control operations for the memory cells and first multi-capacitor structures within spaces between the control logic devices and horizontally neighboring at least one of the control logic devices. The first multi-capacitor structures span a same or fewer number of routing tiers as the control logic devices and are configured to regulate and supply voltage to one or more of the control logic devices.

公开(公告)号：US11776925B2

公开(公告)日：2023-10-03

申请号：US17364429

申请日：2021-06-30

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege

IPC: H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L25/00 ,  G11C11/4091 ,  G11C11/408

CPC classification number: H01L24/08 ,  G11C11/4085 ,  G11C11/4091 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/1436

Abstract: A method of forming a microelectronic device comprises forming a first microelectronic device structure comprising a first semiconductor structure, control logic circuitry at least partially overlying the first semiconductive structure, first back-end-of-line (BEOL) structures over and in electrical communication with the control logic circuitry, and first isolation material covering the control logic circuitry and the first BEOL structures. A second microelectronic device structure is bonded over the first BEOL structures to form a first assembly. The first assembly is vertically inverted. A third microelectronic device structure comprising a second semiconductor structure is bonded over the vertically inverted first assembly to form a second assembly. Memory cells comprising portions of the second semiconductor structure are formed after forming the second assembly. Second BEOL structures are formed over the memory cells. Microelectronic devices, electronic systems, and additional methods are also described.

公开(公告)号：US11769795B2

公开(公告)日：2023-09-26

申请号：US17499410

申请日：2021-10-12

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Haitao Liu ,  Si-Woo Lee ,  Fatma Arzum Simsek-Ege ,  Deepak Chandra Pandey ,  Chandra V. Mouli ,  John A. Smythe, III

IPC: H01L29/06 ,  H01L21/762 ,  H10B12/00

CPC classification number: H01L29/0653 ,  H01L21/76224 ,  H10B12/053 ,  H10B12/31 ,  H10B12/34

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate to form an active area of the apparatus. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region. An isolation trench is adjacent to the active area. The trench includes a dielectric material with a conductive bias opposing the conductive bias of the channel in the active area.

公开(公告)号：US20230301053A1

公开(公告)日：2023-09-21

申请号：US17698558

申请日：2022-03-18

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Fatma Arzum Simsek-Ege

IPC: H01L27/108 ,  G11C11/408 ,  G11C11/4091

CPC classification number: H01L27/10844 ,  G11C11/4085 ,  G11C11/4091

Abstract: A microelectronic device is disclosed that incudes array regions individually comprising memory cells comprising access devices and storage node devices; digit lines coupled to the access devices and extending in a first direction; and word lines coupled to the access devices and extending in a second direction orthogonal to the first direction, and the word lines extend into word line exit regions. The word line exit regions are horizontally alternating with the array regions in the second direction; and sub word line driver sections are overlapping and above, and in electrical communication with the word line exit regions. Electrical communication between word lines in the word line exit regions and the sub word line driver sections vertically coupled with a vertical word line contact and other interconnections is laterally bounded within socket regions delineated by horizontal boundaries of the word line exit regions.

公开(公告)号：US11763253B2

公开(公告)日：2023-09-19

申请号：US16997785

申请日：2020-08-19

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Gitanjali T. Ghosh ,  Yixin Yan ,  Rosa M. Avila-Hernandez

IPC: G06Q10/08 ,  G06Q10/087 ,  G06N20/00

CPC classification number: G06Q10/087 ,  G06N20/00

Abstract: Methods, apparatuses, and systems associated with inventory management are described. Examples can include receiving at a processor first signaling from a first sensor device configured to monitor the interior of a first enclosure and receiving at the processor second signaling from a second sensor device configured to monitor the interior of a second enclosure. Examples can include writing from the processor to a storage device coupled to the processor data that is based at least in part on a combination of the first and second signaling, identifying a quantity or amount of at least one item in the first enclosure and at least one item in the second enclosure, and transmitting third signaling when the quantity or amount of the at least one item in the first enclosure or the at least one item in the second enclosure is less than a threshold value.

公开(公告)号：US11751383B2

公开(公告)日：2023-09-05

申请号：US17463286

申请日：2021-08-31

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege

IPC: H01L27/10 ,  H10B12/00 ,  H01L23/00 ,  G11C5/06

CPC classification number: H10B12/488 ,  G11C5/063 ,  H01L24/08 ,  H01L24/80 ,  H10B12/482 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/1436

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure comprising memory cells, digit lines, word lines, and isolation material. Contact structures are formed to extend through the isolation material. Some of the contact structures are coupled to some of the digit lines, and some other of the contact structures are coupled to some of the word lines. Air gaps are formed to be interposed between the contact structures and the isolation material. An additional microelectronic device structure comprising control logic devices and additional isolation material is formed. After forming the air gaps, the additional microelectronic device structure is attached to the microelectronic device structure. Additional contact structures are formed to extend through the additional isolation material and to the contact structures. The additional contact structures are in electrical communication with the control logic devices. Microelectronic devices, electronic systems, and additional methods are also described.