公开(公告)号：US12043780B2

公开(公告)日：2024-07-23

申请号：US18070635

申请日：2022-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Eun Joo Jang

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  G02B6/005 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.

公开(公告)号：US11981851B2

公开(公告)日：2024-05-14

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/01 ,  C01P2002/74 ,  C01P2004/30 ,  C01P2004/64 ,  C01P2004/80

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11977329B2

公开(公告)日：2024-05-07

申请号：US17207501

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SAMSUNG SDI CO., LTD.

Inventor： Shang Hyeun Park ,  Hojeong Paek ,  Eun Joo Jang ,  Shin Ae Jun

IPC: G03F7/00 ,  C08F220/14 ,  C09D4/06 ,  C09K11/02 ,  C09K11/70 ,  G02B5/20 ,  G02B5/22 ,  G03F7/004 ,  G03F7/033 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: G03F7/0007 ,  C08F220/14 ,  C09D4/06 ,  C09K11/02 ,  C09K11/703 ,  G02B5/207 ,  G02B5/223 ,  G03F7/004 ,  G03F7/0042 ,  G03F7/0047 ,  G03F7/033 ,  B82Y30/00 ,  B82Y40/00 ,  C09D4/06 ,  C08F265/06 ,  C08F220/14 ,  C08F220/06

Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.

公开(公告)号：US11884858B2

公开(公告)日：2024-01-30

申请号：US17308344

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Tae Hyung Kim ,  Hongkyu Seo ,  Won Sik Yoon ,  Jaeyong Lee ,  Eun Joo Jang ,  Oul Cho

IPC: C09K11/88 ,  C09K11/70 ,  B82Y40/00 ,  B82Y30/00 ,  B82Y20/00 ,  H10K50/16 ,  H10K50/18 ,  H10K50/115 ,  H10K50/17

CPC classification number: C09K11/883 ,  C09K11/703 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K50/16 ,  H10K50/171 ,  H10K50/18

Abstract: A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.

公开(公告)号：US11835856B2

公开(公告)日：2023-12-05

申请号：US17204110

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd.

Inventor： Shin Ae Jun ,  Shang Hyeun Park ,  Hojeong Paek ,  Jonggi Kim ,  Hyeyeon Yang ,  Eun Joo Jang ,  Yong Seok Han

IPC: G03F7/00 ,  G03F7/033 ,  G02B5/20 ,  G02B5/22 ,  C09K11/02 ,  C09K11/08

CPC classification number: G03F7/0007 ,  C09K11/02 ,  C09K11/08 ,  G02B5/207 ,  G02B5/223 ,  G03F7/033

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

公开(公告)号：US11832468B2

公开(公告)日：2023-11-28

申请号：US17358905

申请日：2021-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Kwanghee Kim ,  Eun Joo Jang ,  Won Sik Yoon ,  Tae Hyung Kim ,  Tae Ho Kim

IPC: H10K50/16 ,  H10K71/00 ,  H10K85/60 ,  H10K50/115 ,  H10K102/00

CPC classification number: H10K50/16 ,  H10K71/00 ,  H10K85/60 ,  H10K50/115 ,  H10K2102/00 ,  H10K2102/331

Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

公开(公告)号：US11827828B2

公开(公告)日：2023-11-28

申请号：US18059075

申请日：2022-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Eun Joo Jang ,  Yongwook Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Shin Ae Jun ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/54 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  C09K11/74 ,  C09K11/02 ,  C09K11/88 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/70 ,  B82Y20/00 ,  Y10S977/774 ,  Y10S977/95

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US11812627B2

公开(公告)日：2023-11-07

申请号：US17512067

申请日：2021-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Eun Joo Jang ,  Moon Gyu Han ,  Tae Ho Kim ,  Dae Young Chung

IPC: H10K50/115 ,  C09K11/88 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K50/18 ,  H10K50/17 ,  H10K71/00 ,  B82Y20/00 ,  H10K101/40 ,  H10K101/30

CPC classification number: H10K50/115 ,  C09K11/883 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K50/167 ,  H10K50/171 ,  H10K50/18 ,  H10K71/00 ,  B82Y20/00 ,  H10K2101/30 ,  H10K2101/40

Abstract: A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

公开(公告)号：US11800733B2

公开(公告)日：2023-10-24

申请号：US16597891

申请日：2019-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oul Cho ,  Kwanghee Kim ,  Eun Joo Jang

IPC: C09K11/72 ,  C09K11/70 ,  H10K50/115 ,  C09K11/54 ,  C09K11/88 ,  C09K11/02 ,  C09K11/62 ,  C09K11/61 ,  H10K50/13 ,  H10K71/00 ,  H10K101/30

CPC classification number: H10K50/115 ,  C09K11/025 ,  C09K11/54 ,  C09K11/61 ,  C09K11/623 ,  C09K11/70 ,  C09K11/883 ,  H10K50/13 ,  H10K71/00 ,  H10K2101/30

Abstract: A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same.

公开(公告)号：US11793011B2

公开(公告)日：2023-10-17

申请号：US17387281

申请日：2021-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Tae Ho Kim ,  Eun Joo Jang ,  Hongkyu Seo ,  Sang Jin Lee ,  Dae Young Chung ,  Oul Cho

IPC: H10K50/115 ,  H10K50/11 ,  H10K50/81 ,  H10K50/82 ,  H10K50/17 ,  H10K50/18 ,  H10K101/40 ,  H10K101/30 ,  H10K71/00 ,  H10K50/15 ,  H10K71/12 ,  H10K85/10 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/11 ,  H10K50/171 ,  H10K50/81 ,  H10K50/82 ,  H10K71/00 ,  H10K50/15 ,  H10K50/17 ,  H10K50/18 ,  H10K71/12 ,  H10K85/115 ,  H10K85/1135 ,  H10K2101/30 ,  H10K2101/40 ,  H10K2102/00 ,  H10K2102/331 ,  H10K2102/351 ,  H10K2102/361

Abstract: A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.