公开(公告)号：US20210138727A1

公开(公告)日：2021-05-13

申请号：US16680153

申请日：2019-11-11

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook

IPC: B29C64/165 ,  B33Y10/00 ,  B33Y80/00 ,  B33Y70/00 ,  B33Y30/00 ,  B28B1/00 ,  B22F3/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/67

Abstract: A layer of additive material is formed in a circular printing area on a substrate using additive sources distributed across a printing zone. The additive sources form predetermined discrete amounts of the additive material. The substrate and the additive sources are rotated with respect to each other around a center of rotation, so that a pattern of the additive material is formed in a circular printing area on the substrate. Each additive source receives actuation waveforms at an actuation frequency that is proportional to a distance of the additive source from the center of rotation. The actuation waveforms include formation signals, with a maximum of one formation signal in each cycle of the actuation frequency. The formation signals result in the additive sources forming the predetermined discrete amounts of the additive material on the substrate.

公开(公告)号：US11004680B2

公开(公告)日：2021-05-11

申请号：US15361403

申请日：2016-11-26

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Benjamin Stassen Cook ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/373 ,  H01L21/56 ,  H01L23/433 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

公开(公告)号：US20210125902A1

公开(公告)日：2021-04-29

申请号：US17142598

申请日：2021-01-06

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Nazila Dadvand ,  Sreenivasan Koduri

IPC: H01L23/495 ,  H01L21/48

Abstract: A semiconductor device includes a metal substrate including a through-hole aperture having a multi-size cavity including a larger area first cavity portion above a smaller area second cavity portion that defines a first ring around the second cavity portion, where the first cavity portion is sized with area dimensions to receive a semiconductor die having a top side with circuitry coupled to bond pads thereon and a back side with a metal (BSM) layer thereon. The semiconductor die is mounted top side up with the BSM layer on the first ring. A metal die attach layer directly contacts the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.

公开(公告)号：US20210099237A1

公开(公告)日：2021-04-01

申请号：US16590354

申请日：2019-10-01

Applicant: Texas Instruments Incorporated

Inventor： Bichoy Bahr ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: H04B11/00 ,  H01L29/51

Abstract: In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.

公开(公告)号：US10910465B2

公开(公告)日：2021-02-02

申请号：US16236106

申请日：2018-12-28

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L23/31 ,  H01L49/02 ,  H01L21/56 ,  H01L23/66

Abstract: In described examples, a method for fabricating a semiconductor device and a three dimensional structure, and packaging them together, includes: fabricating the integrated circuit on a substrate, immersing the substrate in a liquid encapsulation material, and illuminating the liquid encapsulation material to polymerize the liquid encapsulation material. Immersing the semiconductor device is performed to cover a layer of a platform in the liquid encapsulation material. The platform is a lead frame, a packaging substrate, or the substrate. The illuminating step targets locations of the liquid encapsulation material covering the layer. Illuminated encapsulation material forms solid encapsulation material that is fixedly coupled to contiguous portions of the semiconductor device and of the solid encapsulation material. The immersing and illuminating steps are repeated until a three dimensional structure is formed. The integrated circuit and the three dimensional structure are encapsulated in a single package.

公开(公告)号：US10908414B2

公开(公告)日：2021-02-02

申请号：US15591311

申请日：2017-05-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook ,  David Patrick Magee ,  Stephen John Fedigan

IPC: G02B27/00 ,  G01H13/00 ,  B08B7/02 ,  G01D5/24

Abstract: An apparatus includes a mass detection circuit coupled to a surface covered with a plurality of electrodes. The mass detection circuit is configured to detect a mass of a first droplet present on the surface. The apparatus further includes a transducer circuit coupled to a transducer, which is coupled to the surface and form a lens unit. The transducer circuit configured to excite a first vibration of the surface at a resonant frequency to form a high displacement region on the surface. The apparatus also includes a voltage excitation circuit coupled to the plurality of electrodes. In response to the detection of the mass of the first droplet, the voltage excitation circuit is configured to apply a sequence of differential voltages on one or more consecutive electrodes which moves the first droplet to the high displacement region.

公开(公告)号：US10832991B1

公开(公告)日：2020-11-10

申请号：US16404958

申请日：2019-05-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Nazila Dadvand ,  Sreenivasan Koduri

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  C25D3/38

Abstract: A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.

公开(公告)号：US10804201B2

公开(公告)日：2020-10-13

申请号：US16236101

申请日：2018-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Archana Venugopal ,  Benjamin Stassen Cook ,  Nazila Dadvand ,  Luigi Colombo

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  C01B32/184 ,  H01L23/522

Abstract: A structure for a semiconductor device includes a dielectric layer and a metal layer. The structure also includes a plurality of unit cells. Each unit cell is formed of interconnected segments. The plurality of unit cells forms a lattice. The lattice is between the dielectric layer and the metal layer.

公开(公告)号：US20200321677A1

公开(公告)日：2020-10-08

申请号：US16716642

申请日：2019-12-17

Applicant: Texas Instruments Incorporated

Inventor： Hassan Omar Ali ,  Juan Alejandro Herbsommer ,  Benjamin Stassen Cook ,  Vikas Gupta ,  Athena Lin ,  Swaminathan Sankaran

IPC: H01P3/16 ,  H01P3/12 ,  H01Q1/22 ,  H04B1/40

Abstract: A device includes a multilayer substrate having a first surface and a second surface opposite the first surface. An integrated circuit is mounted on the second surface of the multilayer substrate, the integrated circuit having transmission circuitry configured to process millimeter wave signals. A substrate waveguide having a substantially solid wall is formed within a portion of the multilayer substrate perpendicular to the first surface. The substrate waveguide has a first end with the wall having an edge exposed on the first surface of the multilayer substrate. A reflector is located in one of the layers of the substrate and is coupled to an edge of the wall on an opposite end of the substrate waveguide.

公开(公告)号：US20200211862A1

公开(公告)日：2020-07-02

申请号：US16236099

申请日：2018-12-28

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L21/56 ,  H01L23/31

Abstract: In described examples, a method for encapsulating a semiconductor device includes the steps of immersing a layer of the semiconductor device in a liquid encapsulation material, irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material, and moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the layer. Immersing the semiconductor device is performed to cover a layer of the device in the liquid encapsulation material. Targeted locations of the liquid encapsulation material covering the layer are irradiated to form solid encapsulation material. The semiconductor device is moved from a surface of the liquid encapsulation material so that a new layer of the semiconductor device and/or of the solid encapsulation material can be covered by the liquid encapsulation material. The irradiating and moving steps are then repeated until a three dimensional structure on the semiconductor device is formed using the solid encapsulation material.