公开(公告)号：US20130031524A1

公开(公告)日：2013-01-31

申请号：US13559612

申请日：2012-07-27

申请人： Limin He ,  So-Zen Yao ,  Wenyong Deng ,  Jing Chen ,  Liang-Jih Chao

发明人： Limin He ,  So-Zen Yao ,  Wenyong Deng ,  Jing Chen ,  Liang-Jih Chao

IPC分类号： G06F17/50

CPC分类号： G06F17/5077

摘要： Routing methods for an integrated circuit design layout are disclosed. The layout can include design netlists and library cells. A multiple-level global routing can generate topological wire for each net. An area oriented graph-based detail routing on the design can be performed. A post route optimization after the detail routing can be performed to further improve the routing quality. Some methods can be single threaded all or some of the time, and/or multi-threaded some or all of the time.

公开(公告)号：US08344183B2

公开(公告)日：2013-01-01

申请号：US12548807

申请日：2009-08-27

申请人： Jing Chen ,  Heyuan Song ,  Chungu Xia ,  Xinzhi Zhang ,  Zhonghua Tang

发明人： Jing Chen ,  Heyuan Song ,  Chungu Xia ,  Xinzhi Zhang ,  Zhonghua Tang

IPC分类号： C07C41/01

CPC分类号： C07C41/50 ,  C07C43/30

摘要： The present invention discloses a method for synthesizing polyoxymethylene dimethyl ethers by ionic liquid catalysis. The method comprises synthesizing polyoxymethylene dimethyl ethers by using a functional acidic ionic liquid as catalyst and using methylal and trioxymethylene as reactant under a relative mild reaction condition. The invention has advantages of high catalyst activity and reaction conversion, simple reaction process, high operationability and controllability, as well as good product distribution and high raw material utilization ratio.

摘要翻译： 本发明公开了一种通过离子液体催化合成聚甲醛二甲醚的方法。 该方法包括使用功能性酸性离子液体作为催化剂，并在相对温和的反应条件下使用甲缩醛和三氧化亚甲基作为反应物来合成聚甲醛二甲醚。 本发明具有催化剂活性高，反应转化率高，反应速度快，操作性好，可控性好，产品分布好，原料利用率高的优点。

公开(公告)号：US20120302628A1

公开(公告)日：2012-11-29

申请号：US13575492

申请日：2011-01-28

申请人： Michael B. Kastan ,  Jing Chen

发明人： Michael B. Kastan ,  Jing Chen

IPC分类号： A61K31/7088 ,  C12N5/071 ,  C07H21/04

CPC分类号： C12N15/1135 ,  C12N2310/11 ,  C12N2310/351

摘要： The present invention relates to novel oligonucleotides which comprise p53 5′-UTR sequence TCCCTGG (SEQ ID NO: 1) or the complementary p53 3′-UTR sequence CCAGGGA (SEQ ID NO: 2) and their use for such therapeutic applications as protection of normal tissues from the toxicities of chemical or radiation exposure; reducing tissue damage in hypoxia-reperfusion injury, neurodegenerative disorders, oxidative stress, injuries, hyperthermia; preventing aging; preservation of tissues and organs prior to transplanting, etc.

摘要翻译： 本发明涉及包含p53 5'-UTR序列TCCCTGG（SEQ ID NO：1）或互补p53 3'-UTR序列CCAGGGA（SEQ ID NO：2）的新型寡核苷酸及其在治疗应用中的用途， 正常组织从化学或辐射暴露的毒性; 减少缺氧再灌注损伤中的组织损伤，神经变性障碍，氧化应激，损伤，高热; 防止老化; 移植前保存组织和器官等

公开(公告)号：US20120212314A1

公开(公告)日：2012-08-23

申请号：US13408631

申请日：2012-02-29

申请人： Han Li ,  Gang Lin ,  Jing Chen ,  Jinfa Zhang

发明人： Han Li ,  Gang Lin ,  Jing Chen ,  Jinfa Zhang

IPC分类号： H01F27/29

CPC分类号： H05K7/1432 ,  H01F27/292 ,  H01F2027/408 ,  H02M3/33592 ,  Y02B70/1475

摘要： A power module mounted on a system board comprises a printed circuit board having an extension part, at least one primary winding coil disposed on a first side of the extension part. The at least one primary winding coil is disposed at a primary side of the power module. The power module further comprises a PCB winding formed on the extension part at a secondary side of the power module, a first magnetic core assembly, and a connector. The first magnetic core assembly comprises a first magnetic part and a second magnetic part. The at least one primary winding coil and the extension part are enclosed between the first magnetic part and the second magnetic part.

摘要翻译： 安装在系统板上的功率模块包括具有延伸部分的印刷电路板，设置在延伸部分的第一侧上的至少一个初级绕组线圈。 所述至少一个初级绕组线圈设置在所述功率模块的初级侧。 功率模块还包括形成在功率模块的次级侧的延伸部分上的PCB绕组，第一磁芯组件和连接器。 第一磁芯组件包括第一磁性部分和第二磁性部分。 所述至少一个初级绕组线圈和所述延伸部分被封装在所述第一磁性部分和所述第二磁性部分之间。

公开(公告)号：US07972915B2

公开(公告)日：2011-07-05

申请号：US11564780

申请日：2006-11-29

申请人： Jing Chen ,  Yong Cai ,  Kei May Lau

发明人： Jing Chen ,  Yong Cai ,  Kei May Lau

IPC分类号： H01L21/338

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/66462

摘要： A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.

摘要翻译： 公开了利用增强型和耗尽型AlGaN / GaN异质结场效应晶体管（HFET）的单片集成的方法和器件。 首先定义HFET的源极和漏极欧姆接触。 然后限定耗尽型HFET的栅电极。 然后使用基于氟化物的等离子体处理和样品的高温栅极退火来限定增强型HFET的栅电极。 器件隔离通过台面蚀刻或基于氟化物的等离子体处理来实现。 该方法为在高密度和高速应用中有利的基于GaN的集成电路提供了一个完整的平面工艺。

公开(公告)号：US07951310B2

公开(公告)日：2011-05-31

申请号：US11390621

申请日：2006-03-28

申请人： Chifei Wu ,  Xuanquan Zhou ,  Weihong Guo ,  Xiliang Zhang ,  Guozhang Wu ,  Haiyan Xu ,  Xianhui Li ,  Jianfeng Huang ,  Na Yu ,  Shengying Qian ,  Jing Chen ,  Liang Fang ,  Fei Shen ,  Li Lang ,  Qiuying Zhang ,  Jingjie Han

发明人： Chifei Wu ,  Xuanquan Zhou ,  Weihong Guo ,  Xiliang Zhang ,  Guozhang Wu ,  Haiyan Xu ,  Xianhui Li ,  Jianfeng Huang ,  Na Yu ,  Shengying Qian ,  Jing Chen ,  Liang Fang ,  Fei Shen ,  Li Lang ,  Qiuying Zhang ,  Jingjie Han

IPC分类号： H01B1/06 ,  H01B1/12

CPC分类号： H01B1/04 ,  C08F2/44 ,  C08F292/00 ,  H01B1/24 ,  Y10T428/2989 ,  Y10T428/2991 ,  Y10T428/2998

摘要： The present invention discloses a nanophase carbon black grafted with organic compounds, comprising (a) a first component: 100 parts by weight of original carbon black particles, and (b) a second component: 5-300 parts by weight of grafting organic compounds having or producing free radicals which is grafted onto the surface of the carbon black, wherein the molecular weight of the grafting organic compounds is 100-10000, and the nanophase carbon black has a particle size of 1-100 nm. The invention also discloses the synthesis thereof and articles therefrom.

摘要翻译： 本发明公开了一种接枝有机化合物的纳米相炭黑，其包含（a）第一组分：100重量份的原始炭黑颗粒，和（b）第二组分：5-300重量份的接枝有机化合物，其具有 或产生接枝到炭黑表面的自由基，其中接枝有机化合物的分子量为100-10000，纳米相炭黑的粒度为1-100nm。 本发明还公开了其合成及其制品。

公开(公告)号：US07936880B2

公开(公告)日：2011-05-03

申请号：US12942494

申请日：2010-11-09

申请人： Min Huang ,  Jing Chen ,  Aiqin Zhang ,  Xiaohan Liu

发明人： Min Huang ,  Jing Chen ,  Aiqin Zhang ,  Xiaohan Liu

IPC分类号： H04K1/00

CPC分类号： H04W36/08 ,  H04W12/04 ,  H04W36/0038 ,  H04W36/0088 ,  H04W76/27

摘要： A method, an apparatus and a system for key derivation are disclosed. The method includes the following steps: a target base station) receives multiple keys derived by a source base station, where the keys correspond to cells under control of the target base station; the target base station selects a key corresponding to the target cell after knowing a target cell that a user equipment (UE) wants to access. An apparatus for key derivation and a communications system are also provided.

摘要翻译： 公开了一种用于密钥推导的方法，装置和系统。 该方法包括以下步骤：目标基站）接收由源基站导出的多个密钥，其中密钥对应于目标基站的控制下的小区; 目标基站在知道用户设备（UE）想要访问的目标小区之后，选择与目标小区相对应的密钥。 还提供了用于密钥推导的装置和通信系统。

公开(公告)号：US07932539B2

公开(公告)日：2011-04-26

申请号：US11564766

申请日：2006-11-29

申请人： Jing Chen ,  Yong Cai ,  Kei May Lau

发明人： Jing Chen ,  Yong Cai ,  Kei May Lau

IPC分类号： H01L29/66

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7787

摘要： A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).

摘要翻译： 使用氟基等离子浸渍或离子注入制造AlGaN / GaN增强型异质结构场效应晶体管（HFET）的方法。 该方法包括：1）产生栅极图案; 2）将栅极区域中的AlGaN / GaN异质结构以自对准的方式暴露于作为处理掩模的光致抗蚀剂进行氟基等离子体处理; 3）将栅极金属沉积到等离子体处理的AlGaN / GaN异质结构表面; 4）除栅极外除金属; 和5）样品的高温后栅极退火。 该方法可用于将HFET的阈值电压移向更正的正值，并最终将耗尽型HFET转换为增强型HFET（E-HFET）。

公开(公告)号：US20100135576A1

公开(公告)日：2010-06-03

申请号：US12396523

申请日：2009-03-03

申请人： Jiaming He ,  Jianfen Wen ,  Dexiang Jia ,  Jing Chen ,  Ping Chen ,  Chengchen Ma ,  Zhouyi Fan ,  Hongzhen Ding ,  Zhihui Shi ,  Aijun Shi ,  Linghui Fan ,  Qingbo Zhang

发明人： Jiaming He ,  Jianfen Wen ,  Dexiang Jia ,  Jing Chen ,  Ping Chen ,  Chengchen Ma ,  Zhouyi Fan ,  Hongzhen Ding ,  Zhihui Shi ,  Aijun Shi ,  Linghui Fan ,  Qingbo Zhang

IPC分类号： G06K9/18 ,  G06K9/62

CPC分类号： G06K9/00422 ,  G06K9/00416

摘要： The present invention discloses an identifying method of hand-written Latin letter. The present invention considers many hand-written styles of Latin letter, extract many stable characteristics of Latin letter of different hand-written styles, and classify the Latin letter aggregation each time with one characteristic, so that the whole standard Latin letter aggregation is classified into many small Latin letter aggregations with intersection to be the coarse classification candidate letter aggregations to be identified. When identifying the inputted hand-written Latin letter, obtain the coarse classification candidate letter aggregation that matches with the characteristics of the inputted hand-written Latin letter. Many stable characteristics ensure the identifying rate. The multilayer coarse classification candidate letter aggregations regulate the searching path and increase the identifying speed.

摘要翻译： 本发明公开了一种手写拉丁字母的识别方法。 本发明考虑了拉丁字母的许多手写风格，提取了不同手写风格的拉丁字母的许多稳定特征，并且每次用拉丁字母聚集分类拉丁字母汇总，使得整个标准拉丁字母聚合被分类为 许多小的拉丁字母聚集与交集作为粗分类候选字母聚合被识别。 当识别输入的手写拉丁字母时，获得与输入的手写拉丁字母的特征相匹配的粗分类候选字母聚合。 许多稳定的特性确保识别率。 多层粗分类候选字母聚集调节搜索路径，提高识别速度。

公开(公告)号：US07728059B2

公开(公告)日：2010-06-01

申请号：US11353732

申请日：2006-02-14

申请人： Jing Chen ,  Hua Jiao ,  Yegang Lin ,  Jingwu Yang ,  XinMin Yang

发明人： Jing Chen ,  Hua Jiao ,  Yegang Lin ,  Jingwu Yang ,  XinMin Yang

IPC分类号： C08K5/36 ,  C08K5/41 ,  C08K5/42

CPC分类号： C09K21/14 ,  C08K5/42 ,  C08L25/12 ,  C08L27/18 ,  C08L69/00 ,  C08L83/04 ,  C08L2666/18 ,  C08L2666/02 ,  C08L83/00

摘要： A composition is disclosed having minimum halogen content, fire-retardance and/or drip-resistant characteristics. The composition comprises an effective amount of a polycarbonate, a glass fiber, a polysiloxane-polycarbonate copolymer, and a synergistic combination of an aromatic sulfone sulfonate such as potassium diphenylsulfone sulfonate with an aromatic sulfonate such as sodium salt of toluene sulfonic acid, optionally in the presence of an anti-drip agent. The polycarbonate composition is useful for manufacture of electronic and mechanical articles, among others.

摘要翻译： 公开了具有最低卤素含量，阻燃性和/或耐滴滴特性的组合物。 该组合物包含有效量的聚碳酸酯，玻璃纤维，聚硅氧烷 - 聚碳酸酯共聚物，以及芳香族砜磺酸盐如二苯基砜磺酸盐与芳族磺酸盐如甲苯磺酸的钠盐的协同组合，任选地在 存在防滴剂。 聚碳酸酯组合物可用于制造电子和机械制品等。