Abstract:
A film bulk acoustic wave resonator wafer of the present invention prevents electric discharge from occurring in the process of fabricating a film bulk acoustic wave resonator, thereby enhancing product reliability and yield. The film bulk acoustic wave resonator wafer of the present invention comprises a substrate, a lower electrode and an upper electrode provided on the substrate and a piezoelectric film provided between the lower electrode and upper electrode. The lower electrode and upper electrode are shorted through a window provided in the piezoelectric film. Since the lower electrode and upper electrode are therefore kept at the same potential, no electric discharge passing through the piezoelectric film occurs even during the formation of a protective film covering the upper electrode, dicing of the substrate and other processes in which discharge has heretofore been likely to occur.
Abstract:
An electronic device includes: a complex module having a semiconductor device 12 and a plurality of resonators 13a, 13b formed on a single device board 11 and electrically separated from one another; and a printed circuit board 14 on which the complex module is mounted and which electrically connects the resonator 13a judged as a conforming product to the semiconductor device 12 through bumps 22 formed in the resonator 13a.
Abstract:
A piezoelectric resonator includes; a lower electrode 24 formed on a substrate 11; a piezoelectric film 23 formed on the lower electrode 24; an upper electrode 25 formed on the piezoelectric film 23 and obtaining, in collaboration with the lower electrode 24, a signal having a predetermined resonance frequency by a propagation of a bulk acoustic wave inside the piezoelectric film 23; and an acoustic multilayer reflective film 28 including an SiO2 film 28a having a predetermined acoustic impedance and an AIN film 28b having an acoustic impedance higher than the SiO2 film 28a, and reflecting the bulk acoustic wave, the SiO2 film 28a and the AIN film 28b being alternately stacked on the upper electrode 25, and the SiO2 film 28a being in contact with the upper electrode 25.
Abstract:
It is an objective to produce intermediates of optically active beta-3 adrenaline receptor agonists from readily available raw materials in a safe, efficient and industrially advantageous manner. A substituted acetylpyridine derivative represented by the general formula (9) is reduced by enantioselective reduction to produce an optically active hydroxyethylpyridine derivative represented by the general formula (10) (wherein * represents an asymmetric carbon atom), and it is further derivatized to an intermediate of an optically active beta-3 adrenaline receptor agonist, such as an optically active dihydroxyethylpyridine derivative represented by the general formula (14) or an optically active oxirane derivative represented by the general formula (16)
Abstract:
The invention is to realize a surface acoustic wave device that attains a wide band and a small size, and lowers a loss by utilizing the natural single-phase unidirectional transducer characteristics. The surface acoustic wave device comprises a piezoelectric substrate (1) and a pair of interdigitated electrodes (2) provided on one main surface of the piezoelectric substrate 1. As the material of the piezoelectric substrate (1), a single crystal is used that belongs to the point group 32, has the Ca3Ga2Ge4O14 type crystalline structure, comprises La, Ta, Ga and O as main components, and is represented by a chemical formula La3Ta0.5Ga5.5O14. When the cut angle of the substrate (1) and the propagation direction are represented by Eulerian angles (&phgr;, &thgr;, &psgr;), &phgr;, &thgr; and &psgr; are in a first region where &phgr; is from −5° to 5°, &thgr; is from 135° to 155°, and &psgr; is from 15° to 40°, or in a second region where &phgr; is from 10° to 20°, &thgr; is from 140° to 157°, and &psgr; is from 30° to 60°.
Abstract translation:本发明旨在实现一种具有宽带和小尺寸的表面声波器件,并且通过利用天然单相单向传感器特性降低损耗。声表面波器件包括压电基片(1)和一对 设置在压电基板1的一个主表面上的交错电极(2)。作为压电基板(1)的材料,使用属于点组32的单晶,具有Ca 3 Ga 2 Ge 4 O 14型晶体结构,包括La ,Ta,Ga和O为主要成分,由化学式La3Ta0.5Ga5.5O14表示。 当基板(1)的切割角度和传播方向由欧拉角(phi,θ,psi)表示时,phi,θ和psi在第一区域,其中phi为-5°至5°,θ为 从135°至155°,psi为15°至40°,或在第二区域,其中phi为10°至20°,θ为140°至157°,psi为30°至60° 。
Abstract:
This invention provides a process for producing optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivatives, which are of value as intermediates of drugs, from inexpensive starting materials without using any special equipment such as that required for super-low temperature reactions. A process for producing optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivatives which comprises reacting an acetic acid derivative at a temperature of not less than −30° C. with an enolate prepared by permitting either a base or a metal having a valency of 0 to act on the derivative to produce a hydroxyoxohexanoic acid derivative, reducing this compound with the aid of a strain of microorganism to provide a halomethyldioxanylacetic acid derivative, treating this compound with an acetalizing agent in the presence of an acid catalyst to provide a halomethyldioxanylacetic acid derivative, reacted with an acyloxylating agent to provide a acyloxymethyldioxanylacetic acid derivative, and subjecting this compound to solvolysis in the presence of a base.
Abstract:
An easily manufactured shoe press belt for a papermaking machine comprises a high molecular weight cylindrical elastic member having embedded within it, between its inner and outer walls, a multiple layer base member formed by winding a belt-like woven fabric. The layers of the base member are substantially axially coextensive, reinforce the belt against sideward elongation, and achieve uniform hardness and improved durability.
Abstract:
The present invention provides a piezoelectric substrate for a surface acoustic wave device which has high electromechanical coupling coefficient and low SAW velocity, and a surface acoustic wave device using the same. The present invention applies a single crystal comprising belonging to a point group 32 and having Ca3Ga2Ge4O14 type crystal structure. The basic component of the single crystal is comprised of La, Sr, Ta, Ga and O and is represented by the chemical formula: La3−xSrxTa0.5+0.5xGa5.5−0.5xO14. The composition ratio of Sr is preferably in the range of 0 x≦0.15, and more preferably in the range of 0.07 x≦0.08. The present invention also provides a surface acoustic wave device using that in which an interdigital finger electrode is formed in one main surface of the aforementioned piezoelectric substrate. When a cut angle of the substrate cut out of the single crystal and a propagation direction of surface acoustic waves are represented in terms of Euler angles (&phgr;, &thgr;, &psgr;), adequate characteristics can be obtained by selecting these angles.
Abstract translation:本发明提供了一种具有高机电耦合系数和低SAW速度的表面声波装置的压电基片和使用该压电基片的表面声波装置。 本发明应用包含属于点组32并具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的单晶。 单晶的基本成分由La,Sr,Ta,Ga和O组成,由化学式La3-xSrxTa0.5 + 0.5xGa5.5-0.5xO14表示。 Sr的组成比优选地在0℃的范围内。“CUSTOM-CHARACTER FILE =”20“ID =”CUSTOM-CHARACTER- 00001“/> x <= 0.15,更优选在0.07 x <= 0.08。 本发明还提供一种使用在上述压电基板的一个主表面上形成叉指指状电极的表面声波装置。 当从单晶切割的基板的切割角度和表面声波的传播方向以欧拉角(phi,θ,psi)表示时,通过选择这些角度可以获得足够的特性。
Abstract:
A process for producing (2R, 3S)-3-amino-4-phenylbutane-1,2-epoxide compounds which comprises treating a (2S, 3S)-3-amino-1-halo-2-hydroxy-4-phenylbutane compound or a (2S, 3S)-3-amino-4-phenylbutane-1,2-epoxide with a carboxylic acid quaternary ammonium salt or a carboxylic acid metal salt a quaternary ammonium salt and a quaternary ammonium salt, to give a (2S, 3S)-1-acyloxy-3-amino-2-hydroxy-4-phenylbutane compound, further treating the same with a sulfonic acid halide in the presence of an organic base to give a (2S, 3S)-1-acyloxy-3-amino-2-sulfonyloxy-4-phenylbutane compound, furthermore treating said compound with an inorganic base. An intermediate for the production of an HIV protease inhibitor can be produced from L-phenylalanine.
Abstract:
This invention provides an easy and efficient process for producing a simvastatin of great use as an HMG-CoA reductase inhibitor, which comprises deacylation of lovastatin with an inorganic base and a secondary or tertiary alcohol and subjecting the resulting diol lactone to selective protection with a ketal or acetal protective group, acylation and deprotection-lactonization to give simvastatin.