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    SCALABLE LANGUAGE INFRASTRUCTURE FOR ELECTRONIC SYSTEM LEVEL TOOLS
    162.
    发明申请
    SCALABLE LANGUAGE INFRASTRUCTURE FOR ELECTRONIC SYSTEM LEVEL TOOLS 有权
    用于电子系统级工具的可扩展语言基础设施

    公开(公告)号：US20130024839A1

    公开(公告)日：2013-01-24

    申请号：US13356472

    申请日：2012-01-23

    Applicant: Rajesh Kumar ,  Sanjay Kumar Jain

    Inventor： Rajesh Kumar ,  Sanjay Kumar Jain

    IPC: G06F9/44

    CPC classification number: G06F8/36

    Abstract: Systems and methods of scalable language infrastructure for electronic system level tools. In accordance with embodiments of the present invention, knowledge about types, functions and the like is encapsulated in a plurality of intelligent components called active component extension modules that are external to the infrastructure. The infrastructure implements a communication mechanism between the clients and these intelligent components, and acts as a common backbone. The infrastructure itself does not maintain any knowledge about any client, types, functions, etc. In accordance with a method embodiment of the present invention, a request is received from a client of a language infrastructure. The request is forwarded from the language infrastructure to an active component extension module. The active component extension module performs a service responsive to the request.

    Abstract translation: 用于电子系统级工具的可扩展语言基础设施的系统和方法。 根据本发明的实施例，关于类型，功能等的知识被封装在被称为活动组件扩展模块的多个智能组件中，该组件在基础设施外部。 基础架构实现了客户端和这些智能组件之间的通信机制，并且作为通用骨干网。 基础设施本身并不保持关于任何客户端，类型，功能等的任何知识。根据本发明的方法实施例，从语言基础设施的客户端接收请求。 该请求从语言基础设施转发到活动组件扩展模块。 活动组件扩展模块响应于该请求执行服务。

    Power switches having positive-channel high dielectric constant insulated gate field effect transistors
    168.
    发明授权
    Power switches having positive-channel high dielectric constant insulated gate field effect transistors 有权
    具有正通道高介电常数绝缘栅场效应晶体管的电源开关

    公开(公告)号：US07999607B2

    公开(公告)日：2011-08-16

    申请号：US12775209

    申请日：2010-05-06

    Applicant: Kelin J. Kuhn ,  Richard K. Hose, Jr. ,  Edward Burton ,  Rajesh Kumar

    Inventor： Kelin J. Kuhn ,  Richard K. Hose, Jr. ,  Edward Burton ,  Rajesh Kumar

    IPC: G05F1/10 ,  G05F3/02

    CPC classification number: H01L27/088

    Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    Abstract translation: 公开了用于微电子器件的功率开关单元。 一方面，微电子器件可以包括功能电路，以及电源开关单元，用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管，其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面，可以将过驱动电压施加到这种晶体管的栅极，以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

    Power Switches Having Positive-Channel High Dielectric Constant Insulated Gate Field Effect Transistors
    170.
    发明申请
    Power Switches Having Positive-Channel High Dielectric Constant Insulated Gate Field Effect Transistors 有权
    具有正通道高介质常数绝缘栅场效应晶体管的功率开关

    公开(公告)号：US20100214005A1

    公开(公告)日：2010-08-26

    申请号：US12775209

    申请日：2010-05-06

    Applicant: Kelin J. Kuhn ,  Richard K. Hose, JR. ,  Edward Burton ,  Rajesh Kumar

    Inventor： Kelin J. Kuhn ,  Richard K. Hose, JR. ,  Edward Burton ,  Rajesh Kumar

    IPC: H03K17/687

    CPC classification number: H01L27/088

    Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    Abstract translation: 公开了用于微电子器件的功率开关单元。 一方面，微电子器件可以包括功能电路，以及电源开关单元，用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管，其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面，可以将过驱动电压施加到这种晶体管的栅极，以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

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