公开(公告)号：US20210167278A1

公开(公告)日：2021-06-03

申请号：US17104931

申请日：2020-11-25

Applicant: TDK CORPORATION

Inventor： Yugo ISHITANI ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

公开(公告)号：US20210098040A1

公开(公告)日：2021-04-01

申请号：US16953851

申请日：2020-11-20

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  H01L27/105 ,  H01L21/8239

Abstract: Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

公开(公告)号：US20200335691A1

公开(公告)日：2020-10-22

申请号：US16807704

申请日：2020-03-03

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Minoru SANUKI

IPC: H01L43/02 ,  H01F10/32

Abstract: A spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit-torque wiring and a first ferromagnetic layer laminated on the spin-orbit-torque wiring in a first direction, wherein the spin-orbit-torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.

公开(公告)号：US20200235290A1

公开(公告)日：2020-07-23

申请号：US16844249

申请日：2020-04-09

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Eiji KOMURA ,  Keita SUDA

IPC: H01L43/10 ,  G11C11/18 ,  G11C11/16 ,  H01L43/08 ,  H01L43/06

Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

公开(公告)号：US20200176043A1

公开(公告)日：2020-06-04

申请号：US16785987

申请日：2020-02-10

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  H01L27/105 ,  H01L21/8239

Abstract: Provided is a spin current magnetization rotational element including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring. The spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, the number of a plurality of the interfacial spin generation layers is two or greater, and in the spin-orbit torque wiring, one of the plurality of interfacial spin generation layers is closest to the first ferromagnetic metal layer.

公开(公告)号：US20200083434A1

公开(公告)日：2020-03-12

申请号：US16566003

申请日：2019-09-10

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  H01L43/10 ,  G06N3/063 ,  G06N3/08

Abstract: A reservoir element of the first aspect of the present disclosure includes: a first ferromagnetic layer; a plurality of second ferromagnetic layers positioned in a first direction with respect to the first ferromagnetic layer and spaced apart from each other in a plan view from the first direction; and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layers.

公开(公告)号：US20200082861A1

公开(公告)日：2020-03-12

申请号：US16684633

申请日：2019-11-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: G11C11/16 ,  H01L21/8239 ,  H01L43/08 ,  H01L43/06 ,  H01L43/02 ,  H01L27/22 ,  H01L27/105 ,  H01F10/32

Abstract: A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

公开(公告)号：US20200044145A1

公开(公告)日：2020-02-06

申请号：US16598280

申请日：2019-10-10

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/08 ,  G11C11/18 ,  G11C11/16 ,  G01R33/09 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L21/8239 ,  G01R33/12

Abstract: A magnetic memory includes magnetoresistance effect elements, each of which includes a first ferromagnetic metal layer in which a magnetization direction is fixed, a second ferromagnetic metal layer for a magnetization direction to be changed, and a nonmagnetic layer provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, a first wiring connected to the first ferromagnetic metal layer of at least one magnetoresistance effect element, spin-orbit torque wirings, each of which is connected to each of the second ferromagnetic metal layers of the magnetoresistance effect elements and extend in a direction intersecting a lamination direction of the magnetoresistance effect element, one first control element connected to the first wiring, one second control element connected to each of first connection points of the spin-orbit torque wirings, and first cell selection elements, each of which is connected to each of second connection points of the spin-orbit torque wirings.

公开(公告)号：US20200044141A1

公开(公告)日：2020-02-06

申请号：US16191893

申请日：2018-11-15

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tomoyuki SASAKI ,  Yukio TERASAKI ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  H01L27/22

Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a width of said position of the first part of the magnetic recording layer.

公开(公告)号：US20190392972A1

公开(公告)日：2019-12-26

申请号：US16564602

申请日：2019-09-09

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  G01R33/09 ,  H03B15/00 ,  G11B5/39 ,  H01L43/10

Abstract: There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.