公开(公告)号：US08466290B2

公开(公告)日：2013-06-18

申请号：US13003441

申请日：2009-07-10

Applicant: Akira Asai ,  Kenji Matsuno ,  Naohisa Ogo ,  Takane Yokotagawa ,  Osamu Takahashi ,  Yasuto Akiyama ,  Tadashi Ashizawa ,  Tadashi Okawara

Inventor： Akira Asai ,  Kenji Matsuno ,  Naohisa Ogo ,  Takane Yokotagawa ,  Osamu Takahashi ,  Yasuto Akiyama ,  Tadashi Ashizawa ,  Tadashi Okawara

IPC: C07D215/38

CPC classification number: C07D401/12 ,  A61K31/4709 ,  C07D413/12 ,  C07D413/14 ,  C07D417/12 ,  C07D417/14

Abstract: The present invention provides a STATS inhibitor containing as an active ingredient, a quinolinecarboxamide derivative represented by the formula (I) (in the formula, W represents a bond or an alkylene chain; X represents O, S, or NR34; and R1 to R8 and R34 each represent H, halogen, alkyl, phenyl, furyl, thienyl, or the like), or a pharmacologically acceptable salt thereof.

Abstract translation: 本发明提供含有作为活性成分的式（I）所示的喹啉甲酰胺衍生物的STATS抑制剂（式中，W表示键或亚烷基链; X表示O，S或NR34; R1〜R8 和R 34各自表示H，卤素，烷基，苯基，呋喃基，噻吩基等）或其药理学上可接受的盐。

公开(公告)号：US20120302524A1

公开(公告)日：2012-11-29

申请号：US13519707

申请日：2010-12-28

Applicant: Akira Asai ,  Kenji Matsuno ,  Naohisa Ogo ,  Osamu Takahashi ,  Yoshiaki Masuda ,  Ayumu Muroya ,  Yasuto Akiyama ,  Tadashi Ashizawa ,  Tadashi Okawara

Inventor： Akira Asai ,  Kenji Matsuno ,  Naohisa Ogo ,  Osamu Takahashi ,  Yoshiaki Masuda ,  Ayumu Muroya ,  Yasuto Akiyama ,  Tadashi Ashizawa ,  Tadashi Okawara

IPC: A61K31/4245 ,  C07D413/14 ,  A61K31/4439 ,  C07F7/10 ,  A61K31/695 ,  A61K31/454 ,  A61K31/5377 ,  A61K31/496 ,  A61K31/4709 ,  A61K31/498 ,  C07D513/04 ,  A61K31/4545 ,  A61K31/541 ,  A61K31/437 ,  C07D487/04 ,  A61K31/55 ,  A61P35/00 ,  C07D413/04

CPC classification number: C07D413/04 ,  C07D413/14 ,  C07D417/14 ,  C07D487/04 ,  C07D498/04 ,  C07D513/04

Abstract: Provided is a 1,3,4-oxadiazole-2-carboxamide compound which has STAT3 inhibitory activity and is useful as an anticancer agent. Provided is a 1,3,4-oxadiazole-2-carboxamide compound represented by formula (I) or a pharmacologically acceptable salt thereof (in the formula, Ar represents a furyl group or the like; R1 represents a hydrogen atom or the like; and —X—Y represents a diaryl group such as a biphenyl group).

Abstract translation: 提供具有STAT3抑制活性并可用作抗癌剂的1,3,4-恶二唑-2-甲酰胺化合物。 提供由式（I）表示的1,3,4-恶二唑-2-甲酰胺化合物或其药学上可接受的盐（在该式中，Ar表示呋喃基等; R 1表示氢原子等; -X-Y表示二苯基等二芳基）。

公开(公告)号：US08309939B2

公开(公告)日：2012-11-13

申请号：US12867387

申请日：2008-05-13

Applicant: Hisashi Harada ,  Osamu Takahashi ,  Yue Hu Pu

Inventor： Hisashi Harada ,  Osamu Takahashi ,  Yue Hu Pu

IPC: A61N5/10

CPC classification number: A61N5/1075 ,  A61N2005/1087 ,  A61N2005/1095

Abstract: When a predetermined region of a target volume is divided into multiple layers in a depth direction of particle beams and particle beams are irradiated, dose calibration is carried out separately for the divided layers.

Abstract translation: 当将目标体积的预定区域在粒子束的深度方向上分成多层并且照射粒子束时，对分割层分别执行剂量校准。

公开(公告)号：US08236639B2

公开(公告)日：2012-08-07

申请号：US13071083

申请日：2011-03-24

Applicant: Hiroaki Kikuchi ,  Katsunori Kondo ,  Shigeru Shinohara ,  Osamu Takahashi ,  Tomoaki Yamabayashi

Inventor： Hiroaki Kikuchi ,  Katsunori Kondo ,  Shigeru Shinohara ,  Osamu Takahashi ,  Tomoaki Yamabayashi

IPC: H01L21/765 ,  H01L21/8239

CPC classification number: H01L29/7397 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66348

Abstract: A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.

Abstract translation: 半导体器件制造方法是形成半导体器件的方法，该半导体器件包括：单元部分，其包括在半导体层中形成沟槽型栅极的多个晶体管单元，并且扩散层形成在 门和围绕电池部分的保护环部分。 半导体器件制造方法包括在形成有栅极和扩散层的半导体层的表面上形成层间电介质膜; 通过回蚀来减小在电池部件中形成的层间绝缘膜的厚度; 在所述层间电介质膜中的所述扩散层上方的位置处形成具有孔或沟槽形状的接触部分; 并在层间辩证膜上形成金属膜。

公开(公告)号：US20110286312A1

公开(公告)日：2011-11-24

申请号：US13125831

申请日：2009-11-16

Applicant: Yuetsu Murakami ,  Koichiro Jujo ,  Osamu Takahashi ,  Jun Tsuneyoshi ,  Ryo Sugawara ,  Takeshi Takano

Inventor： Yuetsu Murakami ,  Koichiro Jujo ,  Osamu Takahashi ,  Jun Tsuneyoshi ,  Ryo Sugawara ,  Takeshi Takano

IPC: G04B17/06 ,  C22F1/16 ,  C22C30/00

CPC classification number: C22C38/52 ,  C21D6/004 ,  C21D6/007 ,  C21D8/0236 ,  C21D8/0242 ,  C21D8/0273 ,  C21D8/06 ,  C21D8/12 ,  C21D9/0075 ,  C21D9/02 ,  C22C19/07 ,  C22C30/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/44 ,  C22F1/00 ,  C22F1/10 ,  G04B17/066 ,  G04B43/007

Abstract: [Task] A constant-modulus alloy, which has a low saturation magnetic flux density to provide weakly magnetic properties, a high Young's modulus, a low temperature coefficient of Young's modulus, and high hardness, is provided. A hairspring, a mechanical driving apparatus and a watch and clock, in which the alloy is used, are provided.[Means for Solution]The alloy consists essentially of, by atomic weight ratio, 20 to 40% Co and 7 to 22% Ni, with the total of Co and Ni being 42.0 to 49.5%, 5 to 13% Cr and 1 to 6% Mo, with the total of Cr and Mo being 13.5 to 16.0%, and with the balance being essentially Fe (with the proviso that Fe is present in an amount of 37% or more) and inevitable impurities. The alloy is heated to a temperature of 1100 degrees C. or higher and lower than the melting point, followed by cooling. The alloy is subsequently subjected to repeated wiredrawing and intermediate annealing at 800 to 950 degrees C., thereby forming a wire at a working ratio of 90% or more. The resultant wire has a fiber structure having a fiber axis. The wire is subsequently cold rolled at a rolling reduction of 20% or more, thereby obtaining a sheet, followed by heating the sheet at a temperature of 580 to 700 degrees C. The obtained magnetically insensitive, highly hard, constant modulus alloy has a {110} texture. 2500 to 3500 G of saturation flux density, (−5˜+5)×10−5 degrees C−1 of temperature coefficient of Young's modulus as measured at 0 to 40 degrees C., and 350 to 550 of Vickers hardness

Abstract translation: [任务]提供一种具有低饱和磁通密度以提供弱磁性能，高杨氏模量，低温系数杨氏模量和高硬度的恒模量合金。 提供了使用合金的游丝，机械驱动装置和钟表。 [解决方案]合金基本上由原子量比为20〜40％的Co和7〜22％的Ni，Co和Ni的合计为42.0〜49.5％，Cr为5〜13％，1〜6 ％Mo，Cr和Mo的总量为13.5〜16.0％，余量基本上为Fe（条件是Fe的含量为37％以上）和不可避免的杂质。 将合金加热至1100℃以上且低于熔点，然后冷却。 随后在800-950℃下对该合金进行重复拉丝和中间退火，从而以90％以上的加工率形成线。 所得到的线具有具有<111>纤维轴的纤维结构。 然后将线材以20％以上的压下率进行冷轧，得到片材，然后在580〜700℃的温度下加热片材。得到的磁性不敏感，高硬度，恒定模量的合金具有{ 110} <111>纹理。 在0至40摄氏度测量的2500至3500G的饱和磁通密度，（-5〜+ 5）×10-5摄氏度的杨氏模量的温度系数，以及维氏硬度的350至550

公开(公告)号：US08006153B2

公开(公告)日：2011-08-23

申请号：US12197691

申请日：2008-08-25

Applicant: Steven Ross Ferguson ,  Garrett Stephen Koch ,  Osamu Takahashi ,  Michael Brian White

Inventor： Steven Ross Ferguson ,  Garrett Stephen Koch ,  Osamu Takahashi ,  Michael Brian White

IPC: G01R31/28

CPC classification number: G01R31/318544 ,  G01R31/318536

Abstract: A method, an apparatus, and a computer program are provided to utilize built-in self test (BIST) latches for multiple purposes. Conventionally, BIST latches are single purpose. Hence, separate latches are utilized for array built-in self test (ABIST) and logic built-in self test (LBIST) operations. By having the separate latches, though, a substantial amount area is lost. Therefore, to better utilize the latches and the area, ABIST latches are reconfigured to utilize some previously unused ports to allow for multiple uses for the latches, such as for LBIST.

Abstract translation: 提供了一种方法，装置和计算机程序以利用用于多个目的的内置自检（BIST）锁存器。 通常，BIST锁存器是单一目的。 因此，单独的锁存器用于阵列内置自检（ABIST）和逻辑内置自检（LBIST）操作。 然而，通过使用单独的锁存器，大量的区域丢失。 因此，为了更好地利用锁存器和区域，ABIST锁存器被重新配置以利用一些以前未使用的端口来允许锁存器的多个使用，例如用于LBIST。

公开(公告)号：US07989105B2

公开(公告)日：2011-08-02

申请号：US11334217

申请日：2006-01-17

Applicant: Fumihiko Suzuki ,  Osamu Takahashi ,  Hiroyuki Yamada ,  Kazuo Togashi ,  Toru Ishii ,  Takayuki Yamahira

Inventor： Fumihiko Suzuki ,  Osamu Takahashi ,  Hiroyuki Yamada ,  Kazuo Togashi ,  Toru Ishii ,  Takayuki Yamahira

IPC: H01M2/08 ,  H01M6/12 ,  H01M6/46 ,  H01M2/02

CPC classification number: H01M2/1061 ,  H01M2/0275 ,  H01M2/0287 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/4221 ,  H01M10/4257 ,  H01M10/448 ,  H01M2200/103 ,  H01M2200/106

Abstract: A battery pack is provided. For example, the battery pack includes a box-shaped or plate-shaped battery pack. The battery pack has a hard outer jacket member, a box-shaped or plate-shaped battery element, a cover, and a circuit board. The hard outer jacket member has a first opening and a second opening formed at both ends. The box-shaped or plate-shaped battery element is contained in the outer jacket member and has electrode terminals. The cover is molded from resin and is fitted to the first opening. The circuit board is connected to the electrode terminal leads and contained in the cover. At least the electrode terminal leads extends from the first opening. The cover has concave portions on both ends of one longer side. The outer jacket member has cut portions that expose at least the concave portions of the cover. At least a longer side of the cover and the outer jacket member are heat-adhered.

Abstract translation: 提供电池组。 例如，电池组包括盒形或板状电池组。 电池组具有硬的外护套构件，盒形或板状电池元件，盖和电路板。 硬外护套构件具有形成在两端的第一开口和第二开口。 盒状或板状电池元件容纳在外护套构件中并具有电极端子。 盖子由树脂模制，并安装在第一个开口上。 电路板连接到电极端子引线并包含在盖中。 至少电极端子引线从第一开口延伸。 盖在一个较长的一侧的两端具有凹部。 外护套构件具有至少露出盖的凹部的切割部分。 盖和外护套构件的至少较长一侧被热粘附。

公开(公告)号：US20110062419A1

公开(公告)日：2011-03-17

申请号：US12991958

申请日：2009-05-22

Applicant: Hiroaki Kikuchi ,  Osamu Takahashi ,  Katsunori Kondo ,  Tomoaki Yamabayashi ,  Kunio Ogasawara ,  Tadashi Ishigaki ,  Yutaka Hienuki ,  Motonori Nakamura ,  Agus Subagyo

Inventor： Hiroaki Kikuchi ,  Osamu Takahashi ,  Katsunori Kondo ,  Tomoaki Yamabayashi ,  Kunio Ogasawara ,  Tadashi Ishigaki ,  Yutaka Hienuki ,  Motonori Nakamura ,  Agus Subagyo

IPC: H01L29/06 ,  H01L21/336 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  H01L51/0048

Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.

Abstract translation: 提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。 在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。 然后，在绝缘保护膜上形成源电极和漏电极。 此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。 然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。 在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

公开(公告)号：US20100225292A1

公开(公告)日：2010-09-09

申请号：US12717681

申请日：2010-03-04

Applicant: Eiji NISHIMORI ,  Yoshihiko MATSUO ,  Osamu TAKAHASHI ,  Takeshi KIMURA

Inventor： Eiji NISHIMORI ,  Yoshihiko MATSUO ,  Osamu TAKAHASHI ,  Takeshi KIMURA

IPC: G05F1/10

CPC classification number: H02M3/156

Abstract: A DC-DC converter control circuit includes: a slope signal generation circuit that generates a reference voltage by superimposing a slope voltage onto a standard voltage; a comparator that performs comparison of the reference voltage with an output voltage and generates a signal according to a result of the comparison; an oscillator that generates a pulse signal with a substantially constant cycle; and a control signal generation circuit that generates a control signal that turns on a switch based on a comparator output signal and turns off the switch based on the pulse signal.

Abstract translation: DC-DC转换器控制电路包括：斜率信号产生电路，通过将斜率电压叠加在标准电压上来产生参考电压; 比较器，执行参考电压与输出电压的比较，并根据比较结果生成信号; 产生具有基本恒定周期的脉冲信号的振荡器; 以及控制信号生成电路，其基于比较器输出信号生成接通开关的控制信号，并根据脉冲信号关断开关。

公开(公告)号：US20100221025A1

公开(公告)日：2010-09-02

申请号：US12714005

申请日：2010-02-26

Applicant: Osamu TAKAHASHI

Inventor： Osamu TAKAHASHI

IPC: G03G15/00

CPC classification number: G03G15/5058 ,  G03G15/0194 ,  G03G2215/00059 ,  G03G2215/00063

Abstract: An image forming apparatus is provided. The image forming apparatus includes, a carrier element, an image forming unit, a patch mark generation unit, a specular reflected light detection unit that detects light irradiated onto the carrier element by the irradiation unit and specularly-reflected by the carrier element or patch marks, and a diffuse reflected light detection unit that detects the light irradiated onto the carrier element by the irradiation unit and diffusely-reflected by the carrier element or the patch marks. Additionally, the image forming apparatus includes, a correction unit that corrects at least one of a value detected by the specular reflected light detection unit and the diffuse reflected light detection unit, a correction condition determination unit that determines correction conditions for the correction unit, and a density calculation unit that calculates a density of a patch mark.

Abstract translation: 提供一种图像形成装置。 图像形成装置包括：载体元件，图像形成单元，贴片标记生成单元，镜面反射光检测单元，其检测由照射单元照射到载体元件上并被载体元件或贴标记镜面反射的光 以及漫反射光检测单元，其通过照射单元检测照射到载体元件上的光并由载体元件或贴片标记漫反射。 另外，图像形成装置包括校正由镜面反射光检测单元和漫反射光检测单元检测的值中的至少一个的校正单元，确定校正单元的校正条件的校正条件判定单元，以及 密度计算单元，其计算贴片标记的密度。