公开(公告)号：US09824935B2

公开(公告)日：2017-11-21

申请号：US15643036

申请日：2017-07-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/265 ,  H01L29/165

CPC classification number: H01L21/823821 ,  H01L21/26506 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66545

Abstract: A method includes forming an initial strain relaxed buffer layer on a semiconductor substrate. A trench is formed within the initial strain relaxed buffer layer. An epitaxial deposition process is performed to form an in situ carbon-doped strain relaxed buffer layer in the trench. A channel semiconductor material is formed on the initial strain relaxed buffer layer and on the in situ carbon-doped strain relaxed buffer layer in the trench. A plurality of fin-formation trenches that extend into the initial strain relaxed buffer layer is formed so as to thereby form an NMOS fin including the channel semiconductor material and the in situ carbon-doped strain relaxed buffer layer and a PMOS fin including the channel semiconductor material and the initial strain relaxed buffer layer. A recessed layer of insulating material and gate structures are formed around the NMOS fin and the PMOS fin.

公开(公告)号：US20170301589A1

公开(公告)日：2017-10-19

申请号：US15643036

申请日：2017-07-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/165 ,  H01L21/265

CPC classification number: H01L21/823821 ,  H01L21/26506 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66545

Abstract: A method includes forming an initial strain relaxed buffer layer on a semiconductor substrate. A trench is formed within the initial strain relaxed buffer layer. An epitaxial deposition process is performed to form an in situ carbon-doped strain relaxed buffer layer in the trench. A channel semiconductor material is formed on the initial strain relaxed buffer layer and on the in situ carbon-doped strain relaxed buffer layer in the trench. A plurality of fin-formation trenches that extend into the initial strain relaxed buffer layer is formed so as to thereby form an NMOS fin including the channel semiconductor material and the in situ carbon-doped strain relaxed buffer layer and a PMOS fin including the channel semiconductor material and the initial strain relaxed buffer layer. A recessed layer of insulating material and gate structures are formed around the NMOS fin and the PMOS fin.

公开(公告)号：US09754903B2

公开(公告)日：2017-09-05

申请号：US14926880

申请日：2015-10-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Min-hwa Chi ,  Ajey Poovannummoottil Jacob

IPC: H01L21/00 ,  H01L23/62

CPC classification number: H01L23/62 ,  H01L23/5252

Abstract: A semiconductor structure includes a dielectric layer, a silicidable metal layer and an undoped filler material layer are used to create an anti-efuse device. The anti-efuse device may be situated in a dielectric layer of an interconnect structure for a semiconductor device or may be planar. Where part of an interconnect structure, the anti-efuse device may be realized by causing a current to flow therethrough while applying local heating. Where planar, the filler material may be situated between extensions of metal pads and metal atoms caused to move from the extensions to the filler material layer using a current flow and local heating.

公开(公告)号：US20170243791A1

公开(公告)日：2017-08-24

申请号：US15052098

申请日：2016-02-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob

IPC: H01L21/8238 ,  H01L29/45 ,  H01L29/267 ,  H01L21/283 ,  H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/823431 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/283 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2029/7858 ,  H01L2924/13067

Abstract: One illustrative method disclosed herein includes forming a gate structure above a portion of a fin and performing a first epitaxial growth process to form a silicon-carbide (SiC) semiconductor material above the fin in the source and drain regions of a FinFET device. In this example, the method also includes performing a heating process so as to form a source/drain graphene contact from the silicon-carbide (SiC) semiconductor material in both the source and drain regions of the FinFET device and forming first and second source/drain contact structures that are conductively coupled to the source/drain graphene contact in the source region and the drain region, respectively, of the FinFET device.

公开(公告)号：US20170141226A1

公开(公告)日：2017-05-18

申请号：US14940597

申请日：2015-11-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob

IPC: H01L29/78 ,  H01L21/8238

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823878 ,  H01L29/7781

Abstract: One illustrative method disclosed herein includes, among other things, forming first and second fins, respectively, for a PMOS device and an NMOS device, each of the first and second fins comprising a lower substrate fin portion made of the substrate material and an upper fin portion that is made of a second semiconductor material that is different from the substrate material, exposing at least a portion of the upper fin portion of both the first and second fins, masking the PMOS device and forming a semiconductor material cladding on the exposed upper portion of the second fin for the NMOS device, wherein the semiconductor material cladding is a different semiconductor material than that of the second semiconductor material. The method also including forming gate structures for the PMOS FinFET device and the NMOS FinFET device.

公开(公告)号：US09564486B2

公开(公告)日：2017-02-07

申请号：US14839378

申请日：2015-08-28

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  RENESAS ELECTRONICS CORPORATION

Inventor： Murat Kerem Akarvardar ,  Steven John Bentley ,  Kangguo Cheng ,  Bruce B. Doris ,  Jody Fronheiser ,  Ajey Poovannummoottil Jacob ,  Ali Khakifirooz ,  Toshiharu Nagumo

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/088 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/0653 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/785

Abstract: A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor substrate. A second isolation region is formed between the first group of fins and the second group of fins, the second isolation region extends through a portion of the first isolation region such that the first and second isolation regions are in direct contact and a height above the bulk semiconductor substrate of the second isolation region is greater than a height above the bulk semiconductor substrate of the first isolation region.

Abstract translation: 形成半导体结构的方法包括在第一组鳍片的翅片之间以及在第二组鳍片的翅片之间形成第一隔离区域。 第一组翅片形成在体半导体衬底中。 第二隔离区域形成在第一散热片组和第二散热片组之间，第二隔离区域延伸穿过第一隔离区域的一部分，使得第一隔离区域和第二隔离区域直接接触并且高于主体 第二隔离区域的半导体衬底大于第一隔离区域的体半导体衬底上方的高度。

公开(公告)号：US09524908B2

公开(公告)日：2016-12-20

申请号：US14242529

申请日：2014-04-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yi Qi ,  Ajey Poovannummoottil Jacob

IPC: H01L21/308 ,  H01L21/3213 ,  H01L21/8234

CPC classification number: H01L21/823431

Abstract: One illustrative method disclosed herein includes, among other things, forming a region of a sacrificial material in a semiconductor substrate at a location where the portion of the fin to be removed will be located, after forming the region of sacrificial material, performing at least one first etching process to form a plurality of fin-formation trenches that define the fin, wherein at least a portion of the fin is comprised of the sacrificial material, and performing at least one second etching process to selectively remove substantially all of the sacrificial material portion of the fin relative to the substrate.

Abstract translation: 本文中公开的一种说明性方法包括在形成牺牲材料区域之后，在要被去除的翅片的部分将被定位的位置处在半导体衬底中形成牺牲材料的区域，执行至少一个 第一蚀刻工艺以形成限定翅片的多个翅片形成沟槽，其中鳍片的至少一部分由牺牲材料构成，并且执行至少一个第二蚀刻工艺以选择性地移除基本上所有的牺牲材料部分 的翅片相对于基底。

公开(公告)号：US09455140B2

公开(公告)日：2016-09-27

申请号：US14525351

申请日：2014-10-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Jody A. Fronheiser ,  Murat Kerem Akarvardar

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/66 ,  H01L29/78 ,  H01L21/18

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/18 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: One illustrative method disclosed herein includes, among other things, performing first and second in situ doping, epitaxial deposition processes to form first and second layers of in situ doped epi semiconductor material, respectively, above a semiconductor substrate, wherein one of the first and second layers has a high level of germanium and a low level of P-type dopant material and the other of the first and second layers has a low level of germanium and a high level of P-type dopant material, and performing a mixing thermal anneal process on the first and second layers so as to form the final silicon germanium material having a high level of germanium and a high level of P-type dopant material.

Abstract translation: 本文中公开的一种说明性方法包括进行第一和第二原位掺杂，外延沉积工艺以分别在半导体衬底之上形成第一和第二层原位掺杂的外延半导体材料，其中第一和第二 层具有高水平的锗和低水平的P型掺杂剂材料，并且第一和第二层中的另一层具有低水平的锗和高水平的P型掺杂剂材料，并且进行混合热退火工艺 在第一和第二层上形成具有高水平的锗和高水平的P型掺杂剂材料的最终硅锗材料。

公开(公告)号：US09425289B2

公开(公告)日：2016-08-23

申请号：US14471038

申请日：2014-08-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Murat Kerem Akarvardar

IPC: H01L21/20 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/30604 ,  H01L29/1054

Abstract: One illustrative method disclosed herein includes forming a recessed fin structure and a replacement fin cavity in a layer of insulating material above the recessed fin structure, forming at least first and second individual layers of epi semiconductor material in the replacement fin cavity, wherein each of the first and second layers have different concentrations of germanium, performing an anneal process on the first and second layers so as to form a substantially homogeneous SiGe replacement fin in the fin cavity, and forming a gate structure around at least a portion of the replacement fin.

Abstract translation: 本文公开的一种说明性方法包括在凹陷鳍结构上方的绝缘材料层中形成凹陷翅片结构和替换翅片空腔，在替换翅片腔中形成至少第一和第二独立的外延半导体材料层，其中每个 第一层和第二层具有不同浓度的锗，对第一层和第二层进行退火处理，以在翅片腔中形成基本上均匀的SiGe替换翅片，并且在替换翅片的至少一部分周围形成栅极结构。

公开(公告)号：US20160225674A1

公开(公告)日：2016-08-04

申请号：US14608902

申请日：2015-01-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/165 ,  H01L21/306 ,  H01L29/167 ,  H01L21/266 ,  H01L29/66 ,  H01L21/265 ,  H01L29/78

CPC classification number: H01L21/823821 ,  H01L21/26506 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/165 ,  H01L29/66545

Abstract: One illustrative method disclosed herein includes, among other things, recessing first and second fins to define replacement fin cavities in a layer of insulating material, forming an initial strain relaxed buffer layer such that it only partially fills the replacement fin cavities, implanting carbon into the initial strain relaxed buffer layer in the NMOS region, forming a channel semiconductor material on the initial strain relaxed buffer layer within the replacement fin cavities in both the NMOS region and the PMOS region to thereby define an NMOS fin comprised of the channel semiconductor material and a carbon-doped strain relaxed buffer layer and a PMOS fin comprised of the channel semiconductor material and the initial strain relaxed buffer layer and forming gate structures for the NMOS and PMOS devices.

Abstract translation: 本文中公开的一种说明性方法包括凹入的第一和第二鳍片以限定绝缘材料层中的替换翅片空腔，形成初始应变松弛缓冲层，使得其仅部分填充替换翅片腔，将碳注入到 NMOS区域中的初始应变松弛缓冲层，在NMOS区域和PMOS区域中的置换鳍片腔内的初始应变松弛缓冲层上形成沟道半导体材料，由此限定由沟道半导体材料和 碳掺杂应变松弛缓冲层和由沟道半导体材料和初始应变弛豫缓冲层组成的PMOS鳍，并形成用于NMOS和PMOS器件的栅极结构。