公开(公告)号：US09412613B2

公开(公告)日：2016-08-09

申请号：US14574928

申请日：2014-12-18

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Ludovic Godet ,  Yongmei Chen ,  Jun Xue ,  Mukund Srinivasan ,  Ellie Y. Yieh ,  Srinivas D. Nemani

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/3086 ,  H01L21/31144 ,  H01L21/31155

Abstract: Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.

Abstract translation: 本文描述的实施例提供了形成蚀刻选择性硬掩模的方法。 非晶碳硬掩模被植入各种掺杂剂以增加硬掩模的硬度和密度。 无定形碳硬掩模的离子注入还保持或减少硬掩模的内部应力。 蚀刻选择性硬掩模通常提供高级NAND和DRAM器件中的改进的图案化。

公开(公告)号：US09377692B2

公开(公告)日：2016-06-28

申请号：US14301184

申请日：2014-06-10

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Tristan Ma ,  Joseph C. Olson ,  Christopher Bencher

IPC: G03F7/20 ,  G03F7/38 ,  B82Y10/00

CPC classification number: G03F7/38 ,  B82Y10/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/70

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在光刻过程中由光致酸发生器产生的酸的随机扩散有助于线边缘/宽度粗糙度。 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用控制由光致酸发生器沿线和间隔方向产生的酸的扩散，防止由随机扩散引起的线边缘/宽度粗糙度。 用于实施上述方法的装置也在此公开。

公开(公告)号：US20160148713A1

公开(公告)日：2016-05-26

申请号：US14549829

申请日：2014-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ki Nam ,  Ludovic Godet

IPC: G21K1/14 ,  H05H3/06

CPC classification number: H05H3/06 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J2237/0041 ,  H05H3/02

Abstract: A neutral beam is scanned across a workpiece surface and the beam angle is controlled in a manner that avoids variation in the beam source-to-workpiece distance during scanning.

Abstract translation: 在工件表面上扫描中性光束，并且以避免扫描期间光束源到工件距离变化的方式控制光束角度。

公开(公告)号：US20150368801A1

公开(公告)日：2015-12-24

申请号：US14657405

申请日：2015-03-13

Applicant: Applied Materials, Inc.

Inventor： Jun XUE ,  Ludovic Godet ,  Qiwei Liang

IPC: C23C16/50 ,  C23C16/458 ,  C23C14/48 ,  H01J37/32

CPC classification number: C23C16/045 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32633

Abstract: Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and associated methods are disclosed. A distribution grid is disposed in a chamber between the plasma and a substrate. The distribution grid includes a first surface facing the substrate and a focusing surface facing the plasma. A passageway extends through the distribution grid, and is sized with a width to prevent the plasma sheath from entering therein. By positioning the focusing surface at an angle other than parallel to the substrate, an ion flux from the plasma may be accelerated across the plasma sheath and particles of the flux pass through the passageway to be incident upon the substrate. In this manner, the angled ion flux may perform thin film deposition and etch processes on sidewalls of features extending orthogonally from or into the substrate, as well as angled implant and surface modification.

Abstract translation: 等离子体处理室采用其上具有聚焦表面的分配网格，其上形成有角度的焊剂以到达衬底，以及相关方法。 配电网布置在等离子体和基板之间的室中。 配电网包括面向衬底的第一表面和面向等离子体的聚焦表面。 通道延伸穿过配电网，并且具有宽度的尺寸以防止等离子体护套进入其中。 通过将聚焦表面定位在与衬底不同的角度处，来自等离子体的离子通量可以跨越等离子体鞘加速，并且助焊剂的颗粒通过通道入射到衬底上。 以这种方式，成角度的离子通量可以在从基底垂直延伸的特征的侧壁上进行薄膜沉积和蚀刻处理，以及成角度的植入物和表面改性。