Abstract:
A structure (110, 150) for enhancing the quality factor (Q) of a capacitive circuit (112, 152). The capacitive circuit (112, 152) includes a first resistance (122, 164), a capacitance (124, 166), and a second resistance (126, 168). The capacitance (124, 166) represents the net capacitance of the capacitive circuit (112, 152), and the first resistance (122, 164) and second resistance (126, 168) represent elements of the intrinsic resistance of the capacitive circuit (112, 152). In a one embodiment the structure (110) includes a first capacitor (128) which is connected in parallel with the capacitive circuit (112), and second capacitor (130) which is connected in series with the capacitive circuit (112). In a second embodiment the structure (150) includes a first inductor (164), connected in series between the capacitive circuit (152) and a node (162) where the first capacitor (174) and one end of the second capacitor (176) connect, and a second inductor (172) connected in series between the capacitive circuit (152) and the other end of the second capacitor (130).
Abstract:
An electronically trimable capacitor (10) having a plurality of branch circuits (30) each including a capacitor (32) which may be selectively controlled by a switch (34) to contribute or not to the net capacitance exhibited by the trimable capacitor (10). Operation of the switches (34) is under direction of an interface (36), which can receive a program signal containing digital instruction for programming via a program terminal (22). An optional memory (38) permits storing a program of states for the switches (34), so that the interface (36) maybe instructed to reset the switches (34) and thus cause the trimable capacitor (10) again provide a previously programmed net capacitance, say, in the event of power on or a power loss. An optional enable terminal (24) provides protection against inadvertent programming.
Abstract:
A method and apparatus for digitally controlling the capacitance of an integrated circuit device using MOS-FET devices. In accordance with one aspect of the present invention, a one-bit or “binary” varactor is presented wherein the gate-to-bulk capacitance of the MOS-FET device exhibits dependency to a D.C. voltage applied between its gate and well implant regions. The capacitance-voltage characteristic of the binary capacitor has three major regions: (1) a first relatively flat region having little or no voltage dependency and having a capacitance equal to a first low capacitance of C1; (2) a sloped region wherein a voltage dependency exists; and (3) a second relatively flat region where there is little or no voltage dependency and where the capacitance equals a second higher capacitance of C2. The capacitance of the binary capacitor can be changed from C1 to C2 simply by changing the polarity of the applied D.C. voltage from a positive to a negative value. A plurality of binary capacitors are configured in a parallel arrangement to produce a digitally controlled capacitor. The digitally controlled capacitor can be used in any integrated circuit requiring a tightly controlled tuned network. One application is a voltage-controlled oscillator (VCO) wherein the center output frequency of the VCO is calibrated by digitally modifying the capacitance of the VCO's digitally controlled capacitor. A means for determining whether the VCO requires calibration and a means for calibrating the center output frequency of the VCO is presented.
Abstract:
A programmable crystal oscillator is provided having a memory for storing frequency-defining parameters. Typically, one of these parameters is used to program an adjustable capacitive load circuit coupled to a crystal to thereby adjust the crystal source frequency. Additional parameters are used to program the output frequency of a phase locked loop circuit coupled to receive the adjusted source frequency. A further parameter can also be used to divide the output frequency of the phase locked loop circuit to supply a specified output frequency. The oscillators can be manufactured as generic programmable crystal oscillators without regard for output frequency and then quickly programmed to produce customer-specified output frequencies with a high degree of accuracy.
Abstract:
A digitally tuned and linearized low voltage crystal oscillator integrated circuit requires only an oscillator crystal as external circuitry. The inventive circuit operates at voltages of 3.3V and below and requires no other off-chip components. A crystal oscillator, such as a Pierce crystal oscillator uses an inverting gain stage and a phase shift network composed of an array of switchable capacitors and the crystal. The design offers improvements in power consumption, area, manufacturability and cost.
Abstract:
A programmable crystal oscillator is provided having a memory for storing frequency-defining parameters. Typically, one of these parameters is used to program an adjustable capacitive load circuit coupled to a crystal to thereby adjust the crystal source frequency. Additional parameters are used to program the output frequency of a phase locked loop circuit coupled to receive the adjusted source frequency. A further parameter can also be used to divide the output frequency of the phase locked loop circuit to supply a specified output frequency. The oscillators can be manufactured as generic programmable crystal oscillators without regard for output frequency and then quickly programmed to produce customer-specified output frequencies with a high degree of accuracy.
Abstract:
A frequency detector of a phase-lock-loop circuit is used for measuring a frequency error between a frequency of an output signal of an oscillator and a frequency of a synchronizing signal. When the frequency error in each of 32 periods of the synchronizing signal exceeds a predetermined magnitude, the phase-lock-loop circuits begins operating in a coarse frequency correction mode. As long as the 32 periods have not lapsed, the phase-lock-loop circuit operates in an idle mode of operation and the oscillator is not corrected. As a result, during vertical retrace, when equalizing pulses occur, the phase-lock-loop circuit is not disturbed by a large frequency error.
Abstract:
A phase-locked-loop circuit includes an oscillator having switched capacitors that are selectively coupled to a positive feedback path of the oscillator in a coarse frequency error correction mode of operation. When the frequency error is small, the circuit operates in a fine error correction mode without varying the selection of the switched reactive elements.
Abstract:
This is a voltage-controlled oscillator. The tank circuit of the oscillator comprises a plurality of capacitors, the capacitance magnitudes of which are related to each other in binary fashion. Also incorporated in this tank circuit is a voltage variable capacitor, to which a bias is applied for tuning purposes. By programmed switching one or more of the aforementioned capacitances are switched into the tank circuit, so as to bring the oscillator within the pull-in range of a phase lock loop. The elements of the oscillator are related to a coaxial line structure. The invention further provides a convenient mounting on which the tank circuit parameters are arranged. The various lumped capacitances in the tank circuit are switched in and out by PIN diodes.