公开(公告)号：US20120146515A1

公开(公告)日：2012-06-14

申请号：US12962657

申请日：2010-12-08

申请人： Chao-Hsuan Chuang ,  Hung-Che Chou ,  Sheng-Chieh Wu ,  Pao-Chuan Lin

发明人： Chao-Hsuan Chuang ,  Hung-Che Chou ,  Sheng-Chieh Wu ,  Pao-Chuan Lin

IPC分类号： H05B37/03

CPC分类号： H05B33/0815 ,  Y02B20/346

摘要： A driving device for a LED module is provided. The driving device for the LED module includes a voltage converting unit, a LED module voltage detecting unit, and a switching signal generation unit. The voltage converting unit produces a driving voltage to drive the LED module according to a switching signal. The LED module voltage detecting unit divides the driving voltage to produce a comparison voltage. The switching signal generation unit receives the comparison voltage by a fault detection pin and compares a reference voltage and the comparison voltage to enable or disable the switching signal. After the switching signal is disabled, the switching signal generation unit further pulls up a voltage level of the fault detection pin to a logic high level voltage, so as to produce a fault notification signal to let the fault detection pin also have a function for fault notification.

摘要翻译： 提供了一种用于LED模块的驱动装置。 LED模块的驱动装置包括电压转换单元，LED模块电压检测单元和开关信号生成单元。 电压转换单元根据开关信号产生驱动电压以驱动LED模块。 LED模块电压检测单元分压驱动电压以产生比较电压。 开关信号发生单元通过故障检测引脚接收比较电压，并比较基准电压和比较电压，以使能或禁止开关信号。 开关信号禁止后，开关信号发生单元进一步将故障检测引脚的电压电平升高到逻辑高电平电压，以产生故障通知信号，使故障检测引脚也具有故障功能 通知。

公开(公告)号：US11588021B2

公开(公告)日：2023-02-21

申请号：US16830225

申请日：2020-03-25

申请人： Excelliance MOS Corporation

发明人： Chu-Kuang Liu ,  Yi-Lun Lo

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L21/225 ,  H01L21/265 ,  H01L29/66 ,  H01L21/324 ,  H01L21/336

摘要： A trench MOSFET and a manufacturing method of the same are provided. The trench MOSFET includes a substrate, an epitaxial layer having a first conductive type, a gate in a trench in the epitaxial layer, a gate oxide layer, a source region having the first conductive type, and a body region and an anti-punch through region having a second conductive type. The anti-punch through region is located at an interface between the source region and the body region, and a doping concentration thereof is higher than that of the body region. The epitaxial layer has a first pn junction near the source region and a second pn junction near the substrate. N regions are divided into N equal portions between the two pn junctions, and N is an integer greater than 1. The closer the N regions are to the first pn junction, the greater the doping concentration thereof is.

公开(公告)号：US10826288B1

公开(公告)日：2020-11-03

申请号：US16563923

申请日：2019-09-08

申请人： Excelliance MOS Corporation

发明人： Ming-Hung Chien ,  Ching-Tsan Lee

IPC分类号： H02M3/156 ,  H02M1/32 ,  H02H9/00 ,  H03K17/082 ,  G05F1/46

摘要： A power circuit including a switching circuit and a soft start control circuit is provided. A first terminal of the switching circuit is configured to receive an input voltage. A control terminal of the switching circuit receives a control signal. A second terminal of the switching circuit is configured to provide an output voltage. The soft start control circuit generates the control signal according to the output voltage and a first reference voltage to control a turn-on state of the switching circuit. The soft start control circuit switches a slope of the control signal from a first slope to a second slope after the switching circuit is turned on and when a voltage value of the control signal is equal to a second reference voltage, wherein the first slope is less than the second slope to reduce an inrush current at the time when the switching circuit is turned on.

公开(公告)号：US10033287B2

公开(公告)日：2018-07-24

申请号：US14876848

申请日：2015-10-07

申请人： Excelliance MOS Corporation

发明人： Poyu Yang

IPC分类号： H02M1/38 ,  H02M3/335

摘要： A power conversion apparatus including a transformer, a synchronous rectification (SR) transistor and an SR control circuit is provided. A first terminal of a primary side of the transformer receives an input voltage, and a first terminal of a secondary side outputs a DC voltage. A drain terminal of the SR transistor is coupled to a second terminal of the secondary side of the transformer. A source terminal of the SR transistor is coupled to a ground terminal. The SR control circuit receives a signal of the drain terminal of the SR transistor to serve it as a detection signal and generate a duty cycle signal. The SR control circuit converts the duty signal into a charging current and a discharging current so as to charge and discharge an energy-storage device and generate a first voltage. The SR control circuit turns off the SR transistor according to the first voltage.

公开(公告)号：US09941357B2

公开(公告)日：2018-04-10

申请号：US15182586

申请日：2016-06-14

申请人： Excelliance MOS Corporation

发明人： Chu-Kuang Liu

IPC分类号： H01L29/40 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/1083 ,  H01L29/407 ,  H01L29/435 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7813

摘要： A power MOSFET includes a substrate, a semiconductor layer, a first gate, a second gate, a thermal oxide layer, a first CVD oxide layer, and a gate oxide layer. The semiconductor layer is formed on the substrate and has at least one trench. The first gate is located inside the trench. The second gate is located inside the trench on the first gate, wherein the second gate has a first portion and a second portion, and the second portion is located between the semiconductor layer and the first portion. The thermal oxide layer is located between the first gate and the semiconductor layer. The first CVD oxide layer is located between the first gate and the second gate. The gate oxide layer is generally located between the second gate and the semiconductor layer.

公开(公告)号：US09659921B2

公开(公告)日：2017-05-23

申请号：US14642756

申请日：2015-03-10

申请人： Excelliance MOS Corporation

发明人： Yi-Chi Chang ,  Ming-Chuan Chen

IPC分类号： H01L27/02

CPC分类号： H01L27/0251

摘要： A power switch device includes a transistor and an ESD protection circuit. The transistor includes a source, a drain, and a gate, wherein a well region is disposed between the source and the drain. One end of the ESD protection circuit is coupled to the gate and another end thereof is coupled to the well region so as to form a protection circuit between the gate and the source and between the gate and the drain simultaneously.

公开(公告)号：US09502512B2

公开(公告)日：2016-11-22

申请号：US14819450

申请日：2015-08-06

申请人： Excelliance MOS Corporation

发明人： Chu-Kuang Liu

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/78 ,  H01L29/739 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/872

CPC分类号： H01L29/7811 ,  H01L29/0661 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/8725

摘要： An edge terminal structure of a trench power semiconductor device includes a first conductive-type substrate, a first conductive-type epitaxial layer thereon, a first electrode on a surface of the first conductive-type epitaxial layer, a second electrode on a back of the first conductive-type substrate, a first and a second field plates. The trench power semiconductor device includes an active area and an edge terminal area. A trench is in the surface of the first conductive-type epitaxial layer. The first field plate includes an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes a portion of the first electrode and an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer. The insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.

摘要翻译： 沟槽功率半导体器件的边缘端子结构包括第一导电型衬底，其上的第一导电型外延层，第一导电型外延层的表面上的第一电极，第一导电型外延层的背面的第二电极 第一导电型基板，第一和第二场板。 沟槽功率半导体器件包括有源区域和边缘端子区域。 沟槽位于第一导电型外延层的表面。 第一场板包括L形电板，L形电板下面的栅绝缘层和L形电板上的第一电极。 第二场板包括第一电极的一部分和在第一电极的部分和第一导电型外延层之间的绝缘层。 绝缘层覆盖沟槽的尾部，完全覆盖L形电板。

公开(公告)号：US09209699B1

公开(公告)日：2015-12-08

申请号：US14613410

申请日：2015-02-04

申请人： Excelliance MOS Corporation

发明人： Sheng Chieh Wu

IPC分类号： H02M1/32 ,  H02M3/335 ,  H02M1/44

CPC分类号： H02M3/33507 ,  H02M1/32 ,  H02M1/4258 ,  H02M1/44 ,  Y02B70/126

摘要： A power supply is provided, including a bridge rectifier, a film capacitor and a DC-to-DC converter. The bridge rectifier rectifies an input voltage of an AC power supply to produce a full-wave rectified voltage. The film capacitor filters the full-wave rectified voltage to produce a first pulsating DC voltage. A control circuit of the DC-to-DC converter attenuates the first pulsating DC voltage to produce a second pulsating DC voltage, detects a peak value and a valley value of the second pulsating DC voltage, and produces an OCP compensation value of −(Vx−VH)+PH accordingly, where Vx refers to the second pulsating DC voltage, VH refers to the valley value, and PH refers to the peak value. The control circuit provides an OCP function and a constant output power limitation for the DC-to-DC converter according to a compensated OCP setting value produced by adding the OCP compensation value to an OCP setting value.

摘要翻译： 提供电源，包括桥式整流器，薄膜电容器和DC-DC转换器。 桥式整流器对交流电源的输入电压进行整流，以产生全波整流电压。 薄膜电容器对全波整流电压进行滤波以产生第一脉动直流电压。 DC-DC转换器的控制电路衰减第一脉动直流电压以产生第二脉动直流电压，检测第二脉动直流电压的峰值和谷值，并产生 - （Vx -VH）+ PH，其中Vx表示第二脉动直流电压，VH表示谷值，PH表示峰值。 根据通过将OCP补偿值与OCP设定值相加而产生的补偿OCP设定值，控制电路为DC-DC转换器提供OCP功能和恒定输出功率限制。

公开(公告)号：US08933678B2

公开(公告)日：2015-01-13

申请号：US13723206

申请日：2012-12-21

申请人： Excelliance MOS Corporation

发明人： Pao-Chuan Lin ,  Su-Yuan Lin ,  Hung-Che Chou

IPC分类号： H02M3/158 ,  H02M3/156 ,  H02M1/32

CPC分类号： H02M3/156 ,  H02M1/32 ,  H02M3/1588 ,  H02M2003/1566 ,  Y02B70/1466

摘要： A buck voltage converting apparatus is disclosed. The buck voltage converting apparatus includes a first transistor, a second transistor, an inductor, a controller and a switch. The first transistor receives an input voltage. A first terminal of the inductor is coupled to the first and second transistors. A second terminal of the inductor is coupled to an output terminal of the buck voltage converting apparatus for generating an output voltage. The controller receives the output voltage, and generates a detection voltage according to voltage amplitude of the output voltage. The switch is coupled between a first terminal of the first transistor and a control terminal of the second transistor. The switch is turned on or off according to the detection voltage.

摘要翻译： 公开了降压电压转换装置。 降压电压转换装置包括第一晶体管，第二晶体管，电感器，控制器和开关。 第一晶体管接收输入电压。 电感器的第一端子耦合到第一和第二晶体管。 电感器的第二端子耦合到降压电压转换装置的输出端，用于产生输出电压。 控制器接收输出电压，并根据输出电压的电压幅度产生检测电压。 开关耦合在第一晶体管的第一端和第二晶体管的控制端之间。 开关根据检测电压开启或关闭。

公开(公告)号：US20140253060A1

公开(公告)日：2014-09-11

申请号：US13787822

申请日：2013-03-07

申请人： EXCELLIANCE MOS CORPORATION

发明人： Pao-Chuan Lin ,  Li-Chieh Chen ,  Hung-Che Chou

IPC分类号： G05F1/10

CPC分类号： G05F1/10 ,  H02M3/156 ,  H02M2001/0025

摘要： A voltage converter includes a constant on time signal generator, a first transistor, a second transistor, an inductor, and a ripple injection circuit. The constant on time signal generator generates a first driving signal and a second driving signal. The ripple injection circuit receives an output signal and generates a ripple injection signal. The constant on time signal generator generates the first and second driving signals according to the ripple injection signal, the output signal, and a reference signal.

摘要翻译： 电压转换器包括恒定的导通时间信号发生器，第一晶体管，第二晶体管，电感器和纹波注入电路。 恒定的导通时间信号发生器产生第一驱动信号和第二驱动信号。 纹波注入电路接收输出信号并产生纹波注入信号。 恒定的导通时间信号发生器根据纹波注入信号，输出信号和参考信号产生第一和第二驱动信号。