公开(公告)号：US20050067374A1

公开(公告)日：2005-03-31

申请号：US10675697

申请日：2003-09-30

Applicant: Ananda Baer ,  Marie-Claire Cyrilla ,  Frederick Dill ,  Benjamin Wang ,  Charngye Hwang ,  Mustafa Pinarbasi

Inventor： Ananda Baer ,  Marie-Claire Cyrilla ,  Frederick Dill ,  Benjamin Wang ,  Charngye Hwang ,  Mustafa Pinarbasi

IPC: G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  B44C1/22

CPC classification number: G11B5/3903 ,  G11B5/3163

Abstract: A method of making a read sensor which defines its stripe height before its trackwidth using photoresist layers formed without undercuts is disclosed. The photoresist layers are removed using chemical-mechanical polishing (CMP) lift-off techniques instead of using conventional solvents. In particular, a first photoresist layer is formed in a central region over a plurality of read sensor layers. End portions of the read sensor layers around the first photoresist layer are removed by ion milling to define the stripe height for the read sensor. Next, insulator layers are deposited where the end portions of the read sensor layers were removed. The first photoresist layer is then removed through mechanical interaction with a CMP pad. In subsequently defining the trackwidth for the read sensor, a second photoresist layer is formed in a central region over the remaining read sensor layers. End portions of the read sensor layers around the second photoresist layer are then removed by ion milling to define the trackwidth for the read sensor. Next, hard bias and lead layers are deposited where the end portions of the read sensor layers were removed. The second photoresist layer is then removed through mechanical interaction with the CMP pad. Preferably, protective layers (e.g. carbon) between the photoresist layers and the read sensor layers are formed prior to photoresist removal. Thus, problems including those inherent with use of photoresist structures having undercuts are eliminated.

Abstract translation: 公开了一种制造读取传感器的方法，该读取传感器在其没有底切形成的光致抗蚀剂层之前在其轨道宽度之前限定其条纹高度。 使用化学机械抛光（CMP）剥离技术而不是使用常规溶剂来除去光致抗蚀剂层。 特别地，在多个读取传感器层上的中心区域中形成第一光致抗蚀剂层。 通过离子研磨去除第一光致抗蚀剂层周围的读取传感器层的端部，以限定读取传感器的条带高度。 接下来，沉积读取传感器层的端部的绝缘体层被去除。 然后通过与CMP垫的机械相互作用去除第一光致抗蚀剂层。 随后定义读取传感器的轨道宽度，在剩余的读取传感器层上的中心区域中形成第二光致抗蚀剂层。 然后通过离子铣削去除第二光致抗蚀剂层周围的读取传感器层的端部，以限定读取传感器的轨道宽度。 接下来，在读取传感器层的端部被去除的地方沉积硬偏压和引线层。 然后通过与CMP垫的机械相互作用去除第二光致抗蚀剂层。 优选地，在光致抗蚀剂去除之前形成光致抗蚀剂层和读取传感器层之间的保护层（例如碳）。 因此，消除了包括使用具有底切的光致抗蚀剂结构固有的那些问题。

公开(公告)号：US06423240B1

公开(公告)日：2002-07-23

申请号：US09479859

申请日：2000-01-07

Applicant: Benjamin Wang ,  Cherngye Hwang

Inventor： Benjamin Wang ,  Cherngye Hwang

IPC: G11B560

CPC classification number: G11B5/6005 ,  Y10T29/49046 ,  Y10T29/49048

Abstract: A method of altering the topography of a trailing edge of a slider is disclosed, the slider having a substrate surface, at least one magnetic recording head imbedded in an alumina undercoat, and a vertical axis relative to the substrate surface. The steps include first applying an alumina overcoat to at least the trailing edge, followed by lapping at least the trailing edge of the slider. The slider (or sliders) is then placed on a pallet that rotates, exposing the trailing edge to an ion beam. The ion beam is generated using an etchant gas such as Argon, or a mixture of gases such as Argon and Hydrogen, or Argon and CHF3. The trailing edge (or trailing edges) are then exposed at least once to the ion beam at a predetermined milling angle and predetermined time, the milling angle being the angle made by the ion beam relative to the vertical axis. The milling angle is typically between 0° and 85°.

Abstract translation: 公开了一种改变滑块的后缘的形状的方法，滑块具有衬底表面，嵌入在氧化铝底涂层中的至少一个磁记录头和相对于衬底表面的垂直轴。 所述步骤包括首先将至少后缘施加氧化铝外涂层，然后研磨滑块的至少后缘。 然后将滑块（或滑块）放置在旋转的托盘上，将后缘暴露于离子束。 使用诸如氩气的蚀刻剂气体或诸如氩气和氢气的氩气和CHF 3的气体混合物产生离子束。 然后将后缘（或后缘）以预定的研磨角度和预定时间至少暴露于离子束一次，铣削角度是由离子束相对于垂直轴线制成的角度。 铣削角度通常在0°至85°之间。

公开(公告)号：US20100305621A1

公开(公告)日：2010-12-02

申请号：US12792072

申请日：2010-06-02

Applicant: Benjamin WANG ,  Srilakshmi VISHNUBHOTLA

Inventor： Benjamin WANG ,  Srilakshmi VISHNUBHOTLA

IPC: A61B17/86 ,  B23P11/00

CPC classification number: A61B17/8605 ,  A61B17/7037 ,  A61B17/7038

Abstract: A limited angulation bone screw assembly adapted to couple a spinal rod with a vertebra including a bone screw, a bushing and a housing. The pedicle screw having a shaft and an upper head portion, the upper head portion comprising a spherical surface with flats disposed on opposite sides of the upper head portion. The bushing comprising a lower rounded surface for mating with the spherical surface and flats of the upper head portion to restrict the angular movement of the bone screw. The coupled bone screw and bushing are inserted into the housing in a first orientation and then rotated to a second orientation to secure the coupled bone screw and bushing to complete the housing.

Abstract translation: 适于将脊椎杆与包括骨螺钉，衬套和壳体的椎骨联接的有限角度骨螺钉组件。 椎弓根螺钉具有轴和上头部，上头部包括球形表面，平面布置在上头部的相对侧上。 衬套包括用于与球形表面配合的下圆形表面和上头部的平面以限制骨螺钉的角运动。 联接的骨螺钉和衬套以第一方向插入壳体中，然后旋转到第二方向以固定联接的骨螺钉和衬套以完成壳体。

公开(公告)号：US20060207966A1

公开(公告)日：2006-09-21

申请号：US11081222

申请日：2005-03-15

Applicant: Shawn Hernandez ,  Wipul Jayasekara ,  Timothy Minvielle ,  Benjamin Wang ,  Howard Zolla

Inventor： Shawn Hernandez ,  Wipul Jayasekara ,  Timothy Minvielle ,  Benjamin Wang ,  Howard Zolla

IPC: B44C1/22

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  Y10T29/26 ,  Y10T29/49028 ,  Y10T29/49044 ,  Y10T29/49052

Abstract: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.

Abstract translation: 提出了一种用于制造具有读取头传感器和硬偏压/引线层的读取头的方法，该读取头传感器和硬偏置/引线层包括在传感器材料区域中沉积传感器材料条，以及在第一和第二快速接头中沉积快速铣削介电材料的条带， 研磨与传感器材料区域相邻的介电材料区域。 保护层和掩蔽材料层沉积在传感器材料条和快速铣削电介质材料条上，以提供掩蔽区域和暴露区域。 提供成形源，例如离子铣削源，其形成暴露的区域。 然后将硬偏置/引线材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成第一和第二引线和盖。 然后从这些区域中的每一个去除硬偏压/铅材料的盖和掩模材料。

公开(公告)号：US20050235231A1

公开(公告)日：2005-10-20

申请号：US10823981

申请日：2004-04-14

Applicant: Robin Almes ,  Mark Church ,  Mary Gutberlet ,  Jiunn Tsay ,  Benjamin Wang

Inventor： Robin Almes ,  Mark Church ,  Mary Gutberlet ,  Jiunn Tsay ,  Benjamin Wang

IPC: G03F7/20 ,  G06F17/50 ,  G11B5/31 ,  G11B5/39

CPC classification number: G11B5/3903 ,  G03F1/78 ,  G11B5/3163

Abstract: A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.

Abstract translation: 电荷平衡，连续写入掩模和晶片处理将磁阻照相分辨步骤改变为双掩模步骤操作。 临界图像以非常小的电子束斑尺寸写在一个掩模层上，并且非相关图像以相对较大的电子束斑尺寸写在第二掩模层上。 将两个掩模层放置在相同的玻璃基板上，其中临界掩模层位于基板上最精确的位置。 非关键图像可以被放置在外围场中。 在晶片处理中，临界场对准并暴露在晶片上，然后非关键场对准和暴露。

公开(公告)号：US20050045580A1

公开(公告)日：2005-03-03

申请号：US10652053

申请日：2003-08-29

Applicant: Amanda Baer ,  Marie-Claire Cyrille ,  Frederick Dill ,  Wipul Jayasekara ,  Jui-Lung Li ,  Hugo Santini ,  Benjamin Wang

Inventor： Amanda Baer ,  Marie-Claire Cyrille ,  Frederick Dill ,  Wipul Jayasekara ,  Jui-Lung Li ,  Hugo Santini ,  Benjamin Wang

IPC: G11B5/31 ,  G11B5/39 ,  B44C1/22

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01J2237/3114

Abstract: A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.

Abstract translation: 一种铣削结构的方法。 将未切割的单层或多层抗蚀剂加入要研磨的结构的表面，待研磨的表面限定一个平面。 进行铣削加工，例如离子铣削。 铣削过程包括以高发射率铣削结构并铣削结构。 铣削加工只能执行一次，或重复多次。 可以将高入射率定义为从被研磨表面的平面约65度至约90度。 闪电发生率可以定义为距被研磨表面的平面约0至约30度。