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    METHOD FOR WRITING IN A MAGNETIC DEVICE
    12.
    发明申请
    METHOD FOR WRITING IN A MAGNETIC DEVICE 有权

    公开(公告)号：US20170249982A1

    公开(公告)日：2017-08-31

    申请号：US15516085

    申请日：2015-10-02

    申请人： CROCUS Technology SA

    发明人： Yann Conraux

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/1673 ,  G11C11/1693

    摘要： Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.

    SELF-REFERENCED MRAM CELL AND MAGNETIC FIELD SENSOR COMPRISING THE SELF-REFERENCED MRAM CELL
    13.
    发明申请
    SELF-REFERENCED MRAM CELL AND MAGNETIC FIELD SENSOR COMPRISING THE SELF-REFERENCED MRAM CELL 有权

    公开(公告)号：US20170243625A1

    公开(公告)日：2017-08-24

    申请号：US15516098

    申请日：2015-09-24

    申请人： CROCUS Technology SA

    发明人： Quentin Stainer

    IPC分类号： G11C11/16 ,  G01R33/09

    CPC分类号： G11C11/1675 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1673

    摘要： A self-referenced MRAM cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when MRAM cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. The present disclosure further concerns a magnetic field sensor including a plurality of the self-referenced MRAM cell and a method for programming the magnetic field sensor.

    MULTI-BIT MRAM CELL AND METHOD FOR WRITING AND READING TO SUCH MRAM CELL
    16.
    发明申请
    MULTI-BIT MRAM CELL AND METHOD FOR WRITING AND READING TO SUCH MRAM CELL 有权
    用于写入和读取这些MRAM细胞的多位MRAM细胞和方法

    公开(公告)号：US20170076771A1

    公开(公告)日：2017-03-16

    申请号：US15309229

    申请日：2015-04-23

    申请人： CROCUS Technology SA

    发明人： Quentin STAINER

    IPC分类号： G11C11/16 ,  G11C11/56

    CPC分类号： G11C11/161 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/5607

    摘要： A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells.

    摘要翻译： 一种包括磁性隧道结的多位磁随机存取存储器（MRAM）单元，包括：第一磁存储层，第二磁存储层，磁感应层，第一磁存储层与​​磁感应之间的第一间隔层 层，以及在第二磁存储层和感测层之间的第二间隔层。 第一和第二存储磁化可在m个方向之间切换以存储对应于m2逻辑状态之一的数据，其中m> 2。 本公开还涉及用于写入和读取到MRAM单元和包括多位MRAM单元的存储器件的方法。

    Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
    17.
    发明授权
    Magnetic random access memory cell with a dual junction for ternary content addressable memory applications 有权
    具有用于三元内容可寻址存储器应用的双结的磁性随机存取存储器单元

    公开(公告)号：US09548094B2

    公开(公告)日：2017-01-17

    申请号：US15190499

    申请日：2016-06-23

    申请人： Crocus Technology SA

    发明人： Bertrand Cambou

    IPC分类号： G11C15/02 ,  G11C11/16

    CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

    摘要： A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.

    摘要翻译： MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层。 第二隧道势垒层位于软铁磁层和第二硬铁磁层之间，并具有第二存储磁化。 第一存储磁化可以在第一高预定温度阈值自由定向，并且第二存储磁化可以在第二预定高温阈值自由定向。 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。

    MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS
    19.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS 有权
    用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元

    公开(公告)号：US20160322092A1

    公开(公告)日：2016-11-03

    申请号：US15190499

    申请日：2016-06-23

    申请人： Crocus Technology SA

    发明人： Bertrand Cambou

    IPC分类号： G11C11/16 ,  G11C15/02

    CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

    摘要： A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.

    摘要翻译： MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层。 第二隧道势垒层位于软铁磁层和第二硬铁磁层之间，并具有第二存储磁化。 第一存储磁化可以在第一高预定温度阈值自由定向，并且第二存储磁化可以在第二预定高温阈值自由定向。 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。