公开(公告)号：US06657270B2

公开(公告)日：2003-12-02

申请号：US10127364

申请日：2002-04-22

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

IPC分类号： H01L2982

CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semiconductor substrate; an MTJ cell positioned at the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; and a word line provided on the MTJ cell. The MRAM may also include a bit line contacting the collector; and a reference voltage line contacting the emitter. As a result, the constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

摘要翻译： 公开了一种磁性随机存取存储器（MRAM）。 MRAM可以包括用作双极结晶体管的基极的半导体衬底; 设置在半导体衬底的有源区的双极结型晶体管的发射极和集电极; 位于发射极和集电极之间的有源区域的MTJ单元与发射极和集电极分开预定距离; 和在MTJ单元上提供的字线。 MRAM还可以包括接收收集器的位线; 以及与发射极接触的参考电压线。 结果，简化了MRAM的结构和制造过程，以提高设备的生产率和性能。

公开(公告)号：US06542398B2

公开(公告)日：2003-04-01

申请号：US10033320

申请日：2001-12-27

申请人： Chang Yong Kang ,  Chang-Shuk Kim

发明人： Chang Yong Kang ,  Chang-Shuk Kim

IPC分类号： G11C1702

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

摘要： A magnetic random access memory (MRAM) is disclosed. In order to achieve high integration, the MRAM includes a word line formed in an active region of a semiconductor substrate, and used as a read line and a write line; a ground line and a lower read layer positioned on opposite sides of the active region of the semiconductor substrate; a seed layer contacting the lower read layer, and being overlapped with the upper portion of the word line; an MTJ cell contacting the upper portion of the seed layer at the upper portion of the word line; and a bit line contacting the MTJ cell, and crossing the word line in a vertical direction.

公开(公告)号：US20100103720A1

公开(公告)日：2010-04-29

申请号：US12606015

申请日：2009-10-26

申请人： Hee Bok KANG ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok KANG ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/02

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR to (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR至（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器，包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 （或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

公开(公告)号：US06909129B2

公开(公告)日：2005-06-21

申请号：US10287383

申请日：2002-11-04

申请人： Chang Shuk Kim ,  Hyeok Je Jeong

发明人： Chang Shuk Kim ,  Hyeok Je Jeong

IPC分类号： H01L21/82 ,  G11C11/15 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/5607

摘要： A magnetic random access memory includes a plurality of multi-layered memory structures that are formed within a single memory unit and connected in one of a series and a parallel configuration. Each of the plurality of multi-layered memory structures has a resistance that varies based on a magnetization direction of a ferromagnetic layer. A transistor is operatively coupled to each of the plurality of multi-layered memory structures to perform one of a memory read and a memory write operation based on a conduction state of the transistor.

摘要翻译： 磁性随机存取存储器包括形成在单个存储器单元内并以串联和并联配置之一连接的多个多层存储器结构。 多个多层存储结构中的每一个具有基于铁磁层的磁化方向而变化的电阻。 晶体管可操作地耦合到多个多层存储器结构中的每一个，以基于晶体管的导通状态执行存储器读取和存储器写入操作之一。

公开(公告)号：US06839274B2

公开(公告)日：2005-01-04

申请号：US10335437

申请日：2002-12-30

申请人： In Woo Jang ,  Young Jin Park ,  Kye Nam Lee ,  Chang Shuk Kim ,  Hee Kyung

发明人： In Woo Jang ,  Young Jin Park ,  Kye Nam Lee ,  Chang Shuk Kim ,  Hee Kyung

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

摘要： A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.

摘要翻译： 这里描述了使用公共线的磁性随机存取存储器（MRAM）。 MTJ元素位于MRAM的公共线上。 连接到晶体管源的公共线传输用于读取数据的接地电平电压，并提供写入数据的电流。