公开(公告)号：US07031186B2

公开(公告)日：2006-04-18

申请号：US10651027

申请日：2003-08-29

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

公开(公告)号：US06707085B2

公开(公告)日：2004-03-16

申请号：US10331286

申请日：2002-12-30

申请人： In Woo Jang ,  Young Jin Park ,  Kye Nam Lee ,  Chang Shuk Kim

发明人： In Woo Jang ,  Young Jin Park ,  Kye Nam Lee ,  Chang Shuk Kim

IPC分类号： H01L31119

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.

摘要翻译： 公开了一种磁性随机存取存储器（MRAM），其通过形成用作一对MRAM的两条写入线的第二字线来实现高集成度。 通过将第二字线连接到形成在位线上方的金属线形成接触插塞。 结果，位线和接触插头用于驱动装置，从而实现装置的高集成度。

公开(公告)号：US07333361B2

公开(公告)日：2008-02-19

申请号：US11357214

申请日：2006-02-21

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

公开(公告)号：US06788570B2

公开(公告)日：2004-09-07

申请号：US10277429

申请日：2002-10-22

申请人： Chang Shuk Kim ,  Kye Nam Lee ,  In Woo Jang ,  Kyoung Sik Im

发明人： Chang Shuk Kim ,  Kye Nam Lee ,  In Woo Jang ,  Kyoung Sik Im

IPC分类号： G11C1114

CPC分类号： G11C11/15 ,  G11C11/5607

摘要： Magnetic random access memories (MRAM) are disclosed. The MRAM stores multi-level data by electronically coupling one diode and a plurality of resistance transfer devices, thereby improving a storage capacity and property of the device and achieving high integration thereof. The MRAM may also include a diode, a word line electrically coupled to the diode, a connection layer electrically coupled to the diode; and a plurality of connection pairs each comprising a resistance transfer device and a bit line electrically coupled to the resistance transfer device. One of the connection pairs may be formed on the connection layer, and the bit line of another connection pair may be perpendicular to the bit line of the first connection pair.

摘要翻译： 磁性随机存取存储器（MRAM）被公开。 MRAM通过电子耦合一个二极管和多个电阻传输装置来存储多电平数据，从而提高装置的存储容量和性能并实现其高集成度。 MRAM还可以包括二极管，电耦合到二极管的字线，电耦合到二极管的连接层; 以及多个连接对，每个连接对包括电阻传输装置和电耦合到电阻传输装置的位线。 连接对中的一个可以形成在连接层上，另一个连接对的位线可以垂直于第一连接对的位线。

公开(公告)号：US06750540B2

公开(公告)日：2004-06-15

申请号：US10320048

申请日：2002-12-16

申请人： Chang Shuk Kim

发明人： Chang Shuk Kim

IPC分类号： H01L27095

CPC分类号： H01L27/224

摘要： A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the Schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.

摘要翻译： 公开了使用肖特基二极管的磁性随机存取存储器（MRAM）。 为了实现存储器件的高度集成，在半导体衬底上形成字线而不使用连接层，并且在字线上形成包括MTJ单元，半导体层和位线的堆叠结构，从而形成 在MTJ单元和位线之间的肖特基二极管。 结果，简化了装置的结构，并且由于重复堆叠，装置可以高度集成。

公开(公告)号：US06664579B2

公开(公告)日：2003-12-16

申请号：US10139890

申请日：2002-05-06

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

IPC分类号： H01L2976

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

摘要翻译： 具有位于字线和栅极氧化膜之间的MTJ单元的磁性随机存取存储器（MRAM），源极结区域中的参考电压线以及漏极结区域中的连接线。 简化MRAM的结构和制造过程，以提高设备的生产率和性能。

公开(公告)号：US08174879B2

公开(公告)日：2012-05-08

申请号：US12606015

申请日：2009-10-26

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电气特性分离相邻材料的成分。

公开(公告)号：US07609547B2

公开(公告)日：2009-10-27

申请号：US11963614

申请日：2007-12-21

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

公开(公告)号：US06914003B2

公开(公告)日：2005-07-05

申请号：US10334879

申请日：2002-12-31

申请人： Kye Nam Lee ,  Young Jin Park ,  Chang Shuk Kim ,  In Woo Jang ,  Hee Kyung

发明人： Kye Nam Lee ,  Young Jin Park ,  Chang Shuk Kim ,  In Woo Jang ,  Hee Kyung

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/033 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  H01L21/302

CPC分类号： H01L43/12 ,  H01L21/0331 ,  Y10S438/95

摘要： A method for manufacturing a magnetic random access memory is disclosed. An interlayer insulating film is formed on a lower read layer, a cell region of the interlayer insulating film is etched according to a photo etching process using a cell mask, and a MTJ layer is formed on the lower read layer of the cell region and the interlayer insulating film of a peripheral circuit region. The sidewall of the interlayer insulating film is exposed, the MTJ layer is left merely in the cell region by lifting off the interlayer insulating film, and a bit line which is an upper read layer connected to the MTJ layer is formed in a succeeding process. Accordingly, an effective area of an MTJ cell is obtained and the properties and reliability of the MRAM are improved.

摘要翻译： 公开了一种用于制造磁随机存取存储器的方法。 在下读取层上形成层间绝缘膜，根据使用细胞掩模的光蚀刻工艺对层间绝缘膜的单元区域进行蚀刻，在单元区域的下读取层上形成MTJ层， 外围电路区域的层间绝缘膜。 层间绝缘膜的侧壁被露出，通过剥离层间绝缘膜而将MTJ层仅留在单元区域中，并且在后续处理中形成作为连接到MTJ层的上部读取层的位线。 因此，获得了MTJ单元的有效面积，提高了MRAM的性能和可靠性。

公开(公告)号：US06768670B2

公开(公告)日：2004-07-27

申请号：US10316662

申请日：2002-12-11

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Christine H. Kyung ,  In Woo Jang

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Christine H. Kyung ,  In Woo Jang

IPC分类号： G11C1158

CPC分类号： G11C11/16

摘要： A writing method for a magnetic random access memory (MRAM) using a bipolar junction transistor is disclosed. The writing method is for use with the MRAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method for the MRAM using the bipolar junction transistor writes data by applying current from the emitter to the collector, and changing a magnetization direction of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current. The magnetization direction can be varied in a shorter distance than a distance between the MTJ cell and the bit line, thereby reducing current consumption. It is thus possible to improve a property and reliability of the semiconductor device.

摘要翻译： 公开了一种使用双极结型晶体管的磁性随机存取存储器（MRAM）的写入方法。 写入方法用于使用双极结型晶体管的MRAM，包括：用作双极结型晶体管的基极的半导体衬底; 形成在所述半导体衬底的有源区中的所述双极结型晶体管的发射极和集电极; 位于发射极和集电极之间的有源区域中的MTJ单元与发射极和集电极分开预定距离; 在MTJ单元上形成的字线; 与收集器连接的位线; 以及连接到发射极的参考电压线。 使用双极结晶体的MRAM的写入方法通过从发射极施加电流到集电极来写入数据，并且通过由电流产生的磁场来改变MTJ电池的自由铁磁层的磁化方向。 磁化方向可以在比MTJ单元和位线之间的距离更短的距离内变化，从而减少电流消耗。 因此可以提高半导体器件的性能和可靠性。