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    Magnetic random access memory
    1.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US06909129B2

    公开(公告)日：2005-06-21

    申请号：US10287383

    申请日：2002-11-04

    申请人： Chang Shuk Kim ,  Hyeok Je Jeong

    发明人： Chang Shuk Kim ,  Hyeok Je Jeong

    IPC分类号： H01L21/82 ,  G11C11/15 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L29/76

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/5607

    摘要： A magnetic random access memory includes a plurality of multi-layered memory structures that are formed within a single memory unit and connected in one of a series and a parallel configuration. Each of the plurality of multi-layered memory structures has a resistance that varies based on a magnetization direction of a ferromagnetic layer. A transistor is operatively coupled to each of the plurality of multi-layered memory structures to perform one of a memory read and a memory write operation based on a conduction state of the transistor.

    摘要翻译： 磁性随机存取存储器包括形成在单个存储器单元内并以串联和并联配置之一连接的多个多层存储器结构。 多个多层存储结构中的每一个具有基于铁磁层的磁化方向而变化的电阻。 晶体管可操作地耦合到多个多层存储器结构中的每一个，以基于晶体管的导通状态执行存储器读取和存储器写入操作之一。

    Magnetic random access memory
    3.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US06707085B2

    公开(公告)日：2004-03-16

    申请号：US10331286

    申请日：2002-12-30

    申请人： In Woo Jang ,  Young Jin Park ,  Kye Nam Lee ,  Chang Shuk Kim

    发明人： In Woo Jang ,  Young Jin Park ,  Kye Nam Lee ,  Chang Shuk Kim

    IPC分类号： H01L31119

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.

    摘要翻译： 公开了一种磁性随机存取存储器（MRAM），其通过形成用作一对MRAM的两条写入线的第二字线来实现高集成度。 通过将第二字线连接到形成在位线上方的金属线形成接触插塞。 结果，位线和接触插头用于驱动装置，从而实现装置的高集成度。

    BIOSENSOR AND SENSING CELL ARRAY USING THE SAME
    4.
    发明申请
    BIOSENSOR AND SENSING CELL ARRAY USING THE SAME 有权
    生物传感器和感光细胞阵列使用它

    公开(公告)号：US20100103720A1

    公开(公告)日：2010-04-29

    申请号：US12606015

    申请日：2009-10-26

    申请人： Hee Bok KANG ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

    发明人： Hee Bok KANG ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/02

    CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

    摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR to (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

    摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR至（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器，包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 （或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

    Biosensor and sensing cell array using the same
    6.
    发明授权
    Biosensor and sensing cell array using the same 有权
    生物传感器和感应单元阵列使用相同的

    公开(公告)号：US07333361B2

    公开(公告)日：2008-02-19

    申请号：US11357214

    申请日：2006-02-21

    申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

    发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

    IPC分类号： G11C11/15

    CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

    摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

    摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

    Magnetic random access memory
    7.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US06788570B2

    公开(公告)日：2004-09-07

    申请号：US10277429

    申请日：2002-10-22

    申请人： Chang Shuk Kim ,  Kye Nam Lee ,  In Woo Jang ,  Kyoung Sik Im

    发明人： Chang Shuk Kim ,  Kye Nam Lee ,  In Woo Jang ,  Kyoung Sik Im

    IPC分类号： G11C1114

    CPC分类号： G11C11/15 ,  G11C11/5607

    摘要： Magnetic random access memories (MRAM) are disclosed. The MRAM stores multi-level data by electronically coupling one diode and a plurality of resistance transfer devices, thereby improving a storage capacity and property of the device and achieving high integration thereof. The MRAM may also include a diode, a word line electrically coupled to the diode, a connection layer electrically coupled to the diode; and a plurality of connection pairs each comprising a resistance transfer device and a bit line electrically coupled to the resistance transfer device. One of the connection pairs may be formed on the connection layer, and the bit line of another connection pair may be perpendicular to the bit line of the first connection pair.

    摘要翻译： 磁性随机存取存储器（MRAM）被公开。 MRAM通过电子耦合一个二极管和多个电阻传输装置来存储多电平数据，从而提高装置的存储容量和性能并实现其高集成度。 MRAM还可以包括二极管，电耦合到二极管的字线，电耦合到二极管的连接层; 以及多个连接对，每个连接对包括电阻传输装置和电耦合到电阻传输装置的位线。 连接对中的一个可以形成在连接层上，另一个连接对的位线可以垂直于第一连接对的位线。

    Magnetic random access memory using schottky diode
    8.
    发明授权
    Magnetic random access memory using schottky diode 有权
    使用肖特基二极管的磁性随机存取存储器

    公开(公告)号：US06750540B2

    公开(公告)日：2004-06-15

    申请号：US10320048

    申请日：2002-12-16

    申请人： Chang Shuk Kim

    发明人： Chang Shuk Kim

    IPC分类号： H01L27095

    CPC分类号： H01L27/224

    摘要： A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the Schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.

    摘要翻译： 公开了使用肖特基二极管的磁性随机存取存储器（MRAM）。 为了实现存储器件的高度集成，在半导体衬底上形成字线而不使用连接层，并且在字线上形成包括MTJ单元，半导体层和位线的堆叠结构，从而形成 在MTJ单元和位线之间的肖特基二极管。 结果，简化了装置的结构，并且由于重复堆叠，装置可以高度集成。

    Magnetic random access memory using bipolar junction transistor
    9.
    发明授权
    Magnetic random access memory using bipolar junction transistor 有权
    磁性随机存取存储器采用双极结型晶体管

    公开(公告)号：US06664579B2

    公开(公告)日：2003-12-16

    申请号：US10139890

    申请日：2002-05-06

    申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

    发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

    IPC分类号： H01L2976

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607

    摘要： A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

    摘要翻译： 具有位于字线和栅极氧化膜之间的MTJ单元的磁性随机存取存储器（MRAM），源极结区域中的参考电压线以及漏极结区域中的连接线。 简化MRAM的结构和制造过程，以提高设备的生产率和性能。

    Biosensor and sensing cell array using the same
    10.
    发明授权
    Biosensor and sensing cell array using the same 有权
    生物传感器和感应单元阵列使用相同的

    公开(公告)号：US08174879B2

    公开(公告)日：2012-05-08

    申请号：US12606015

    申请日：2009-10-26

    申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

    发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

    IPC分类号： G11C11/15

    CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

    摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

    摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电气特性分离相邻材料的成分。