公开(公告)号：US20110223736A1

公开(公告)日：2011-09-15

申请号：US12720476

申请日：2010-03-09

Applicant: Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

Inventor： Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

IPC: H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/823821

Abstract: A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.

Abstract translation: 一种形成半导体结构的方法包括在衬底的表面提供包括鳍的衬底，以及形成鳍状场效应晶体管（FinFET），其还包括在鳍上形成栅叠层; 在所述栅极堆叠的侧壁上形成薄的间隔物; 并从翅片开始外延生长外延区域。 在外延生长外延区域的步骤之后，在间隔物的外边缘上形成主间隔物。 在形成主间隔物的步骤之后，进行深源极/漏极注入以形成用于FinFET的深源极/漏极区域。

公开(公告)号：US20110147765A1

公开(公告)日：2011-06-23

申请号：US12640700

申请日：2009-12-17

Applicant: Li-Ping Huang ,  Chih-Hsiang Huang ,  Ka-Hing Fung ,  Chung-Cheng Wu ,  Haiting Wang

Inventor： Li-Ping Huang ,  Chih-Hsiang Huang ,  Ka-Hing Fung ,  Chung-Cheng Wu ,  Haiting Wang

IPC: H01L29/24 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L27/0207 ,  H01L21/28123 ,  H01L21/823878 ,  H01L27/092

Abstract: The present disclosure provides an integrated circuit. The integrated circuit includes a first operational device having a first transistor of a first composition; a second operational device having a second transistor of the first composition; and an isolation transistor disposed between the first and second transistors, the isolation transistor having a second composition different from the first composition.

Abstract translation: 本发明提供集成电路。 集成电路包括具有第一组成的第一晶体管的第一操作装置; 第二操作装置，具有第一组合物的第二晶体管; 以及设置在所述第一和第二晶体管之间的隔离晶体管，所述隔离晶体管具有不同于所述第一组成的第二组成。

公开(公告)号：US07855586B2

公开(公告)日：2010-12-21

申请号：US12347074

申请日：2008-12-31

Applicant: Chen-Hsung Wang ,  Wei-Liang Kung ,  Chung-Cheng Wu

Inventor： Chen-Hsung Wang ,  Wei-Liang Kung ,  Chung-Cheng Wu

IPC: H03K3/017

CPC classification number: H03K3/017 ,  H03K3/84 ,  H03K4/502

Abstract: A frequency jitter generator and a frequency jitter PWM controller are provided for overcoming the shortcoming that a conventional PWM controller reduces the electromagnetic interference issue by means of varying the operating frequency of the PWM controller based on an input voltage, while resulting in the uncertainty of the range of frequency jitter and the difficulty circuit design due to the effect of the input voltage and the load. The frequency jitter generator and PWM controller adjust the range of frequency jitter by using a signal within a fixed voltage range. The invention not only gets rid of the effect of the input voltage and the loading, but also simplifies the circuit design by fixing the range of frequency jitter no greater than a predetermined percentage regardless of the operating frequency of the PWM controller.

Abstract translation: 提供了一种频率抖动发生器和频率抖动PWM控制器来克服传统PWM控制器通过基于输入电压改变PWM控制器的工作频率来减少电磁干扰问题的缺点，同时导致不确定性 由于输入电压和负载的影响，频率抖动范围和电路设计难度大。 频率抖动发生器和PWM控制器通过使用固定电压范围内的信号来调整频率抖动的范围。 本发明不仅消除了输入电压和负载的影响，而且通过将频率抖动的范围固定为不大于预定百分比来简化电路设计，而不管PWM控制器的工作频率如何。

公开(公告)号：US07187046B2

公开(公告)日：2007-03-06

申请号：US10831868

申请日：2004-04-26

Applicant: Chung-Cheng Wu ,  Shye-Lin Wu

Inventor： Chung-Cheng Wu ,  Shye-Lin Wu

IPC: H01L29/76

CPC classification number: H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/6681 ,  Y10S438/962

Abstract: A method of forming a FINFET CMOS device structure featuring an N channel device and a P channel device formed in the same SOI layer, has been developed. The method features formation of two parallel SOI fin type structures, followed by gate insulator growth on the sides of the SOI fin type structures, and definition of a conductive gate structure formed traversing the SOI fin type structures while interfacing the gate insulator layer. A doped insulator layer of a first conductivity type is formed on the exposed top surfaces of a first SOI fin type shape, while a second doped insulator layer of a second conductivity type is formed on the exposed top surfaces of the second SOI fin type shape. An anneal procedure results creation of a source/drain region of a first conductivity type in portions of the first SOI fin type shape underlying the first doped insulator layer, and creation of a source/drain region of a second conductivity type in portions of the second SOI fin type shape underlying the second doped insulator layer. Selective deposition of tungsten on exposed top surface of the source/drain regions is then employed to decrease source/drain resistance.

Abstract translation: 已经开发了形成具有N沟道器件和形成在同一SOI层中的P沟道器件的FINFET CMOS器件结构的方法。 该方法特征是形成两个平行的SOI鳍式结构，随后在SOI鳍型结构的侧面上形成栅极绝缘体，并且界定在栅极绝缘体层之间穿过SOI鳍型结构的导电栅极结构。 在第一SOI鳍型形状的暴露的顶表面上形成第一导电类型的掺杂绝缘体层，而在第二SOI鳍型形状的暴露的顶表面上形成第二导电类型的第二掺杂绝缘体层。 退火程序导致在第一掺杂绝缘体层下面的第一SOI鳍型形状的部分中产生第一导电类型的源极/漏极区域，并且在第二导电类型的部分中产生第二导电类型的源极/漏极区域 第二掺杂绝缘体层下方的SOI鳍型。 然后选择性沉积钨在源极/漏极区域的暴露的顶表面上，以降低源极/漏极电阻。

公开(公告)号：US07173404B2

公开(公告)日：2007-02-06

申请号：US10915398

申请日：2004-08-11

Applicant: Chung Cheng Wu

Inventor： Chung Cheng Wu

IPC: G05F1/56

CPC classification number: H02M3/156 ,  Y10S323/901

Abstract: An auto-switching converter with PWM and PFM selection supplies a boosted DC power to a load through a power switch unit. A starter outputs a starting-enabling signal. An auto PWM/PFM controller is connected to the starter for outputting a selection signal. A controller and a PFM controller are connected to the auto PWM/PFM controller, the power switch unit and the load for transmitting a PWM control signal and a PFM control signal to the power switch unit, respectively, for controlling the switching action of the power switch unit.

Abstract translation: 具有PWM和PFM选择的自动切换转换器通过电源开关单元为负载提供升压直流电源。 起动器输出启动信号。 自动PWM / PFM控制器连接到起动器，用于输出选择信号。 控制器和PFM控制器分别连接到自动PWM / PFM控制器，电源开关单元和用于将PWM控制信号和PFM控制信号传输到电源开关单元的负载，用于控制电源的开关动作 开关单元。

公开(公告)号：US07109692B1

公开(公告)日：2006-09-19

申请号：US11286321

申请日：2005-11-25

Applicant: Chung-Cheng Wu ,  Qin Huang ,  Xiao-Ming Duan

Inventor： Chung-Cheng Wu ,  Qin Huang ,  Xiao-Ming Duan

IPC: G05F1/40

CPC classification number: H02M3/157 ,  H02M1/44 ,  H02M3/1563

Abstract: A high-speed PWM control apparatus with adaptive voltage position and a driving signal generating method thereof is provided. The present invention automatically detects a change in the loading and adjusts the voltage position instantaneously for stabilizing the voltage and reducing the loading output power consumption. The present invention does not require a clock signal to generate a driving signal and does not require an error amplifier to control the modulation. Therefore, the present invention has a fast transient response that responds to the change of the loading instantaneously and has a stabilizing effect. When the apparatus is on a continuous conduction mode (CCM), the switching frequency of the controller is still fixed even though the input voltage Vin and the output voltage Vout are changed. The electrical-magnetic noise disturbance is improved.

Abstract translation: 提供一种具有自适应电压位置的高速PWM控制装置及其驱动信号产生方法。 本发明自动检测负载变化并且瞬时调节电压位置以稳定电压并降低负载输出功率消耗。 本发明不需要时钟信号来产生驱动信号，并且不需要误差放大器来控制调制。 因此，本发明具有快速瞬时响应，其瞬时响应负载变化并且具有稳定效果。 当设备处于连续导通模式（CCM）时，即使输入电压Vin和输出电压Vout改变，控制器的开关频率仍然是固定的。 电磁噪声干扰得到改善。

公开(公告)号：US20060079068A1

公开(公告)日：2006-04-13

申请号：US11288858

申请日：2005-11-29

Applicant: Yi-Ming Sheu ,  Da-Wen Lin ,  Cheng-Ku Chen ,  Po-Ying Yeh ,  Shi-Shung Peng ,  Chung-Cheng Wu

Inventor： Yi-Ming Sheu ,  Da-Wen Lin ,  Cheng-Ku Chen ,  Po-Ying Yeh ,  Shi-Shung Peng ,  Chung-Cheng Wu

IPC: H01L21/76

CPC classification number: H01L28/40 ,  H01L21/31144 ,  H01L21/76237 ,  H01L21/823481 ,  H01L27/10835 ,  H01L27/10861 ,  H01L27/1087

Abstract: A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A photoresist plug is formed in the shallow trench and is recessed below the top of the substrate to expose the top portion of the oxide liner. An angled indium implant through the oxide liner into the substrate is then performed. The plug is removed and an insulator is deposited to fill the trenches. After planarization and wet etch steps, formation of a gate dielectric layer and a patterned gate layer, the NMOS transistor exhibits an improved Vt roll-off of 40 to 45 mVolts for both long and short channels. The improvement is achieved with no degradation in junction or isolation performance. The indium implant dose and angle may be varied to provide flexibility to the process.

公开(公告)号：US20050161069A1

公开(公告)日：2005-07-28

申请号：US10762454

申请日：2004-01-23

Applicant: Chung-Cheng Wu

Inventor： Chung-Cheng Wu

IPC: E04H15/28 ,  E04H15/36

CPC classification number: E04H15/28

Abstract: A tent comprising a shaft, a protective cover, a handle and a plurality number of supporting ribs; the upper, lower shaft design and the supporting ribs is easy for storage; a running ring below the runner is on the upper shaft, two ropes connecting to the runner and running ring respectively stretch out from a cap and connect to an opening ring and a closing ring respectively as the open and close switches, a zipper door is on one side of the protective cover, a ground mats covering ground stretches from the bottom of the protective cover, the ground mats has a tri-directional zipper.

Abstract translation: 帐篷，包括轴，保护罩，手柄和多个支撑肋; 上，下轴设计和支撑肋容易存放; 跑道下方的跑步环位于上轴上，连接到跑步者和跑步环的两根绳子分别从盖子伸出，并分别连接到开环和闭合圈作为开闭开关，拉链门处于 保护罩的一侧，覆盖地面的地垫从保护罩的底部延伸，地垫具有三向拉链。

公开(公告)号：US06914299B2

公开(公告)日：2005-07-05

申请号：US10437092

申请日：2003-05-13

Applicant: Chung-Cheng Wu

Inventor： Chung-Cheng Wu

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/01 ,  H01L27/12 ,  H01L29/76 ,  H01L29/94 ,  H01L31/0392

CPC classification number: H01L29/42392 ,  H01L29/0657 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78696

Abstract: A horizontal surrounding gate MOSFET comprises a monolithic structure formed in an upper silicon layer of a semiconductor substrate which is essentially a silicon-on-insulator (SOI) wafer, the monolithic structure comprising a source and drain portion oppositely disposed on either end of a cylindrical channel region longitudinally disposed between the source and drain. The channel is covered with a gate dielectric and an annular gate electrode is formed circumferentially covering the channel.

Abstract translation: 水平周围栅极MOSFET包括形成在半导体衬底的上硅层中的整体结构，其基本上是绝缘体上硅（SOI）晶片，所述整体结构包括相对地设置在圆柱形 通道区域纵向设置在源极和漏极之间。 通道被栅极电介质覆盖，并且环形栅电极沿周向覆盖通道。

公开(公告)号：US20050012173A1

公开(公告)日：2005-01-20

申请号：US10619114

申请日：2003-07-14

Applicant: Yi-Ming Sheu ,  Da-Wen Lin ,  Cheng-Ku Chen ,  Po-Ying Yeh ,  Shi-Shung Peng ,  Chung-Cheng Wu

Inventor： Yi-Ming Sheu ,  Da-Wen Lin ,  Cheng-Ku Chen ,  Po-Ying Yeh ,  Shi-Shung Peng ,  Chung-Cheng Wu

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/76 ,  H01L21/337 ,  H01L29/00

CPC classification number: H01L21/823481 ,  H01L21/26586 ,  H01L21/76237

Abstract: A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A photoresist plug is formed in the shallow trench and is recessed below the top of the substrate to expose the top portion of the oxide liner. An angled indium implant through the oxide liner into the substrate is then performed. The plug is removed and an insulator is deposited to fill the trenches. After planarization and wet etch steps, formation of a gate dielectric layer and a patterned gate layer, the NMOS transistor exhibits an improved Vt roll-off of 40 to 45 mVolts for both long and short channels. The improvement is achieved with no degradation in junction or isolation performance. The indium implant dose and angle may be varied to provide flexibility to the process.

Abstract translation: 描述了一种在NMOS晶体管中减小反向窄宽度效应的方法。 氧化物衬垫沉积在形成为隔离衬底中的有源区域的浅沟槽中。 在浅沟槽中形成光致抗蚀剂插塞，并且在衬底的顶部下方凹入以暴露氧化物衬垫的顶部部分。 然后进行通过氧化物衬垫到衬底中的成角度的铟植入物。 去除插头并沉积绝缘体以填充沟槽。 在平坦化和湿蚀刻步骤之后，形成栅极介电层和图案化栅极层，NMOS晶体管对于长沟道和短沟道都表现出改善的Vt滚降为40至45毫伏。 在不会降低结或隔离性能的情况下实现改进。 可以改变铟注入剂量和角度以提供该过程的灵活性。