Packaging method using elastic memory foam as safety indicator for heat damage

    公开(公告)号:US06532720B2

    公开(公告)日:2003-03-18

    申请号:US09797455

    申请日:2001-03-01

    申请人: D. W. Anderson

    发明人: D. W. Anderson

    IPC分类号: B65B2322

    CPC分类号: B65D79/02

    摘要: An open cell foam with thermal memory characteristic is used as an indicator for heat damage to an article containing heat sensitive contents packaged in a carton. The foam material may be a polyurethane-based thermoplastic polymer referred to as “Cold Hibernated Elastic Memory” (CHEM) foam. The thermal memory foam can be produced in compressed form and used as inserts in the carton. Upon exposure to a temperature at or above the foam glass transition temperature, the foam insert expands to substantially its original shape (volume) so as to apply a compressive force against the article, making it difficult to remove from the carton. Alternatively, the expanded foam will deform the carton walls, providing an external indication of heat damage. The foam can also be used as a heat-indicating element in an inspection panel of the carton, which ruptures so as to provide external indication of heat damage.

    Method and apparatus for controlling cross directional nip dynamics
    12.
    发明授权
    Method and apparatus for controlling cross directional nip dynamics 失效
    用于控制交叉定向压区动力学的方法和装置

    公开(公告)号:US06257133B1

    公开(公告)日:2001-07-10

    申请号:US09267353

    申请日:1999-03-15

    申请人: D. W. Anderson

    发明人: D. W. Anderson

    IPC分类号: B30B304

    摘要: A method and apparatus for obtaining a desired nip pressure distribution profile in the cross direction of a paper web. The paper web passes through a nip, the latter defined by at least one elastomer covered roll, the covered roll having polarizable particles or magnetic particles embedded therein. A plurality of spaced plates or spaced coils each generate a local field (respectively electric or magnetic) which acts upon individual spaced zones or regions along the covered roll. The field may thus be an electric field or a magnetic filed. The affect of the field is to change the effective modulus of the elastomer by acting on the particles. In turn, this action varies the nip pressure pulse as to exert a desired pressure at each of a plurality of spaced zones or regions on the paper web, to thus create or process a more uniform product in the nip. The method and apparatus can be used, for example, to improve web moisture profiles in the press section of paper machines.

    摘要翻译: 一种用于在纸幅的横向上获得期望的辊隙压力分布轮廓的方法和装置。 纸幅通过辊隙,后者由至少一个弹性体覆盖的辊限定,该覆盖辊具有嵌入其中的可极化颗粒或磁性颗粒。 多个间隔开的板或隔开的线圈每个产生一个局部场(分别是电的或磁的),其作用在沿着被覆盖的辊的各个间隔的区域或区域上。 因此,该场可以是电场或磁场。 该领域的影响是通过作用于颗粒来改变弹性体的有效模量。 反过来,这种作用改变了压区脉冲,以便在纸幅上的多个间隔的多个区域或区域中的每一个处施加所需的压力,从而在压区中产生或处理更均匀的产品。 该方法和装置可用于例如改进造纸机的压榨部中的纸幅湿度分布。

    Writable analog reference voltage storage device
    13.
    发明授权
    Writable analog reference voltage storage device 失效
    可写模拟参考电压存储器件

    公开(公告)号:US5166562A

    公开(公告)日:1992-11-24

    申请号:US697410

    申请日:1991-05-09

    摘要: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.

    摘要翻译: 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 跟随放大器连接到每个浮动栅极存储装置并驱动模拟输出电压总线。 电容器连接到每个模拟输出存储总线。 每个模拟输出电压总线和公共监视器/动态负载总线之间连接一个模拟传输门。 每个模拟传输门由选通信号驱动。

    Elastomer roll for papermaking machine
    14.
    发明授权
    Elastomer roll for papermaking machine 失效
    造纸机弹性辊

    公开(公告)号:US06544156B2

    公开(公告)日:2003-04-08

    申请号:US09843735

    申请日:2001-04-30

    申请人: D. W. Anderson

    发明人: D. W. Anderson

    IPC分类号: B23P1500

    摘要: A method and apparatus for obtaining a desired nip pressure distribution profile in the cross direction of a paper web. The paper web passes through a nip, the latter defined by at least one elastomer covered roll, the covered roll having polarizable particles or magnetic particles embedded therein. A plurality of spaced plates or spaced coils each generate a local field (respectively electric or magnetic) which acts upon individual spaced zones or regions along the covered roll. The field may thus be an electric field or a magnetic filed. The effect of the field is to change the effective modulus of the elastomer by acting on the particles. In turn, this action varies the nip pressure pulse as to exert a desired pressure at each of a plurality of spaced zones or regions on the paper web, to thus create or process a more uniform product in the nip. The method and apparatus can be used, for example, to improve web moisture profiles in the press section of paper machines.

    摘要翻译: 一种用于在纸幅的横向上获得期望的辊隙压力分布轮廓的方法和装置。 纸幅通过辊隙,后者由至少一个弹性体覆盖的辊限定,该覆盖辊具有嵌入其中的可极化颗粒或磁性颗粒。 多个间隔开的板或隔开的线圈每个产生一个局部场(分别是电的或磁的),其作用在沿着被覆盖的辊的各个间隔的区域或区域上。 因此,该场可以是电场或磁场。 该领域的作用是通过作用于颗粒来改变弹性体的有效模量。 反过来,该作用改变了压区脉冲,以便在纸幅上的多个间隔的多个区域或区域中的每一个处施加所需的压力,从而在压区中产生或处理更均匀的产品。 该方法和装置可用于例如改进造纸机的压榨部中的纸幅湿度分布。

    Writable analog reference voltage storage device
    15.
    发明授权
    Writable analog reference voltage storage device 失效
    可写模拟参考电压存储器件

    公开(公告)号:US5243554A

    公开(公告)日:1993-09-07

    申请号:US961785

    申请日:1992-10-15

    摘要: A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.

    摘要翻译: 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电子注入电路用于将电子注入到上面,并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 跟随放大器连接到每个浮动栅极存储装置并驱动模拟输出电压总线。 电容器连接到每个模拟输出存储总线。 每个模拟输出电压总线和公共监视器/动态负载总线之间连接一个模拟传输门。 每个模拟传输门由选通信号驱动。

    Synaptic element and array
    16.
    发明授权
    Synaptic element and array 失效
    突触元素和数组

    公开(公告)号:US5120996A

    公开(公告)日:1992-06-09

    申请号:US535283

    申请日:1990-06-06

    IPC分类号: G06N3/063 G11C15/04 G11C27/02

    摘要: An electronic circuit is disclosed having a sample/hold amplifier connected to an adaptive amplifier. A plurality of such electronic cicuits may be configured in an array of rows and columns. An input voltage vector may be compared with an analog voltage vector stored in a row or column of the array and the stored vector closest to the applied input vector may be identified and further processed.

    摘要翻译: 公开了一种具有连接到自适应放大器的采样/保持放大器的电子电路。 多个这样的电子线路可​​以被配置成行和列的阵列。 可以将输入电压矢量与存储在阵列的行或列中的模拟电压矢量进行比较,并且可以识别并进一步处理最接近所施加的输入向量的存储向量。

    Synaptic element and array
    18.
    发明授权
    Synaptic element and array 失效
    突触元素和数组

    公开(公告)号:US5083044A

    公开(公告)日:1992-01-21

    申请号:US357520

    申请日:1989-05-25

    IPC分类号: G06N3/063 G11C15/04 G11C27/02

    CPC分类号: G11C15/04 G06N3/063 G11C27/02

    摘要: An electronic circuit is disclosed having a sample/hold amplifier connected to an adaptive amplifier. A plurality of such electronic circuits may be configured in an array of rows and columns. An input voltage vector may be compared with an analog voltage vector stored in a row or column of the array and the stored vector closest to the applied input vector may be identified and further processed.

    摘要翻译: 公开了一种具有连接到自适应放大器的采样/保持放大器的电子电路。 多个这样的电子电路可以被配置成行和列的阵列。 可以将输入电压矢量与存储在阵列的行或列中的模拟电压矢量进行比较,并且可以识别并进一步处理最接近所施加的输入向量的存储向量。

    MOS device for long-term learning
    19.
    发明授权
    MOS device for long-term learning 失效
    MOS器件长期学习

    公开(公告)号:US4953928A

    公开(公告)日:1990-09-04

    申请号:US363678

    申请日:1989-06-09

    IPC分类号: H01L29/788 H01L29/861

    摘要: A semiconductor structure for long-term learning includes a p-type silicon substrate or well having first and second spaced apart n-type regions formed therein. A polysilicon floating gate is separated from the surface of the silicon substrate by a layer of gate oxide. One edge of the polysilicon floating gate is aligned with the edge of the first n-type region such that the polysilicon floating gate does not appreciably overly the n-type region. The second n-type region lies beyond the edge of the polysilicon floating gate. The first n-type region, the silicon substrate, and the second n-type region form the collector, base, and emitter, respectively, of a lateral bipolar transistor.An alternate embodiment of a semiconductor long-term learning structure includes an n-type silicon substrate having a p-well region formed therein. An n-type region is formed within the well region. A polysilicon floating gate is separated from the surface of the silicon substrate by a gate oxide and is positioned above the well region. One edge of the polysilicon floating gate is aligned with the edge of the n-type region within the well region such that the polysilicon floating gate does not appreciably overly the n-type region. The substrate, the well, and the n-type region, respectively, form the emitter, base, and collector of a bipolar transistor.

    摘要翻译: 用于长期学习的半导体结构包括在其中形成有第一和第二间隔开的n型区的p型硅衬底或阱。 多晶硅浮栅通过一层栅极氧化物与硅衬底的表面分离。 多晶硅浮动栅极的一个边缘与第一n型区域的边缘对准,使得多晶硅浮置栅极不明显地超过n型区域。 第二n型区域位于多晶硅浮栅的边缘之上。 第一n型区域,硅衬底和第二n型区域分别形成横向双极晶体管的集电极,基极和发射极。 半导体长期学习结构的替代实施例包括其中形成有p阱区的n型硅衬底。 在阱区内形成n型区域。 多晶硅浮置栅极通过栅极氧化物与硅衬底的表面分离并且位于阱区域之上。 多晶硅浮置栅极的一个边缘与阱区域内的n型区域的边缘对齐,使得多晶硅浮栅不明显地超过n型区域。 衬底,阱和n型区域分别形成双极晶体管的发射极,基极和集电极。