摘要:
An open cell foam with thermal memory characteristic is used as an indicator for heat damage to an article containing heat sensitive contents packaged in a carton. The foam material may be a polyurethane-based thermoplastic polymer referred to as “Cold Hibernated Elastic Memory” (CHEM) foam. The thermal memory foam can be produced in compressed form and used as inserts in the carton. Upon exposure to a temperature at or above the foam glass transition temperature, the foam insert expands to substantially its original shape (volume) so as to apply a compressive force against the article, making it difficult to remove from the carton. Alternatively, the expanded foam will deform the carton walls, providing an external indication of heat damage. The foam can also be used as a heat-indicating element in an inspection panel of the carton, which ruptures so as to provide external indication of heat damage.
摘要:
A method and apparatus for obtaining a desired nip pressure distribution profile in the cross direction of a paper web. The paper web passes through a nip, the latter defined by at least one elastomer covered roll, the covered roll having polarizable particles or magnetic particles embedded therein. A plurality of spaced plates or spaced coils each generate a local field (respectively electric or magnetic) which acts upon individual spaced zones or regions along the covered roll. The field may thus be an electric field or a magnetic filed. The affect of the field is to change the effective modulus of the elastomer by acting on the particles. In turn, this action varies the nip pressure pulse as to exert a desired pressure at each of a plurality of spaced zones or regions on the paper web, to thus create or process a more uniform product in the nip. The method and apparatus can be used, for example, to improve web moisture profiles in the press section of paper machines.
摘要:
A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.
摘要:
A method and apparatus for obtaining a desired nip pressure distribution profile in the cross direction of a paper web. The paper web passes through a nip, the latter defined by at least one elastomer covered roll, the covered roll having polarizable particles or magnetic particles embedded therein. A plurality of spaced plates or spaced coils each generate a local field (respectively electric or magnetic) which acts upon individual spaced zones or regions along the covered roll. The field may thus be an electric field or a magnetic filed. The effect of the field is to change the effective modulus of the elastomer by acting on the particles. In turn, this action varies the nip pressure pulse as to exert a desired pressure at each of a plurality of spaced zones or regions on the paper web, to thus create or process a more uniform product in the nip. The method and apparatus can be used, for example, to improve web moisture profiles in the press section of paper machines.
摘要:
A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A follower amplifier is connected to each floating gate storage device and drives an analog output voltage bus. A capacitor is connected to each analog output storage bus. An analog pass gate is connected between each analog output voltage bus and a common monitor/dynamic load bus. Each analog pass gate is driven by a strobe signal.
摘要:
An electronic circuit is disclosed having a sample/hold amplifier connected to an adaptive amplifier. A plurality of such electronic cicuits may be configured in an array of rows and columns. An input voltage vector may be compared with an analog voltage vector stored in a row or column of the array and the stored vector closest to the applied input vector may be identified and further processed.
摘要:
An MOS current mirror includes a floating node onto which and from which electrons may be transported by control signals and electrical semiconductor structures in order to adapt the current mirror to supply a desired output current when a particular input calibration current is present.
摘要:
An electronic circuit is disclosed having a sample/hold amplifier connected to an adaptive amplifier. A plurality of such electronic circuits may be configured in an array of rows and columns. An input voltage vector may be compared with an analog voltage vector stored in a row or column of the array and the stored vector closest to the applied input vector may be identified and further processed.
摘要:
A semiconductor structure for long-term learning includes a p-type silicon substrate or well having first and second spaced apart n-type regions formed therein. A polysilicon floating gate is separated from the surface of the silicon substrate by a layer of gate oxide. One edge of the polysilicon floating gate is aligned with the edge of the first n-type region such that the polysilicon floating gate does not appreciably overly the n-type region. The second n-type region lies beyond the edge of the polysilicon floating gate. The first n-type region, the silicon substrate, and the second n-type region form the collector, base, and emitter, respectively, of a lateral bipolar transistor.An alternate embodiment of a semiconductor long-term learning structure includes an n-type silicon substrate having a p-well region formed therein. An n-type region is formed within the well region. A polysilicon floating gate is separated from the surface of the silicon substrate by a gate oxide and is positioned above the well region. One edge of the polysilicon floating gate is aligned with the edge of the n-type region within the well region such that the polysilicon floating gate does not appreciably overly the n-type region. The substrate, the well, and the n-type region, respectively, form the emitter, base, and collector of a bipolar transistor.
摘要:
This invention relates to a paper substrate containing high surface sizing and low internal sizing and having high dimensional stability, as well as methods of making and using the composition.