Abstract:
In a flat panel display device and a method of manufacturing the same, the flat panel display device is manufactured by forming a display unit on a substrate, forming a hydrophobic barrier layer for preventing a material of an organic layer from flowing around the display unit, and forming a thin film sealing layer by alternately stacking an inorganic layer and the organic layer on the display unit. Accordingly, formation of an edge tail of the organic layer is prevented, thereby preventing penetration of external moisture.
Abstract:
Provided are a light emitting device and a light emitting device package. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a first electrode on the first conductive type semiconductor layer, the first electrode being electrically connected to the first conductive type semiconductor layer; a plurality of reflective islands on the second conductive type semiconductor layer; a second electrode on the second conductive type semiconductor layer and the plurality of reflective islands, the second electrode being electrically connected to the second conductive type semiconductor layer; and a conductive support member on the second electrode.
Abstract:
A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic film on one substrate of the first substrate and a second substrate, forming a sealing member by coating a sealing material that includes an inorganic sealant and an organic compound on an edge of the second substrate, removing the organic compound of the sealing member by baking the sealing member, layering the second substrate on the first substrate so that the sealing member contacts the first substrate, dissolving the sealing member by using a laser beam, solidifying the sealing member, attaching the sealing member to the first substrate, and removing the second substrate from the sealing member.
Abstract:
Disclosed herein is a tape measure with a self-regulating speed control mechanism. In the present invention, when a bobbin rotates, a rubber roller rotatably provided on a movable mounting plate alternately comes into contact with an inner surface of a support ring and a rubber acceleration prevention member provided on the inner surface of the support ring, so that the speed of the bobbin can be smoothly and reliably reduced.
Abstract:
A foldable extension pipe is provided which consists of upper and lower pipe sections which are folded and unfolded. The operation input from the upper side is transmitted towards the lower side by means of the transmission rods of the upper and lower pipe sections being magnetic-coupled by first and second magnetic couplings. The measuring wheel unit and the spraying wheel unit having the foldable extension pipe are carried or stored with ease, and when a user inputs an operation via the upper portion of the extension pipe, particularly the operation input portion such as an operation lever at the grip portion of the upper portion, the operation output portion manipulates the reset switch of the counter, manipulates the nozzle section of the spray can for spraying paint, or brakes the rotary wheel.
Abstract:
A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO) Formula 1 wherein, about 0.75≦x/z≦ about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.
Abstract translation:半导体器件可以包括由下面的式1表示的复合物作为有源层。 x(Ga 2 O 3)·y(In 2 O 3)·z(ZnO)式1其中约0.75< 1E; x / z& 约3.15,约0.55≦̸ y / z≦̸ 约1.70。 可以通过调节与锌(Zn)氧化物混合的镓(Ga)氧化物和铟(In))的量来提高驱动晶体管的开关特性并提高光学灵敏度。
Abstract:
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
Abstract:
A measuring apparatus is conveniently used without a support such as a tripod, and simply measures a relative distance between two arbitrary points, i.e. two arbitrary measurement target objects, without restriction as to the positions of the measurement target objects. Further, the measuring apparatus realizes a very simple measurement process, so that a user can have faith in the measured distance. The measuring apparatus allows first and second indicators to be easily oriented towards the two points that the user wants to measure using the manipulation of the first and second indicators.
Abstract:
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. The CMOS device comprises an epi-layer that may be formed on a substrate; a first semiconductor layer and a second semiconductor layer that may be formed on different regions of the epi-layer, respectively; and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively.
Abstract:
Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.