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公开(公告)号：US08562842B2
公开(公告)日：2013-10-22
申请号：US13181660
申请日：2011-07-13
Applicant: Du-hyun Lee , Byung-kyu Lee , Woong Ko
Inventor： Du-hyun Lee , Byung-kyu Lee , Woong Ko
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0017
Abstract: A method of fabricating a nanoimprint stamp includes forming a resist pattern having a nano size width on a stamp substrate by performing imprint processes repeatedly. In the imprint processes, resist layers that are selectively etched are sequentially used. The stamp substrate is etched using the resist pattern as an etch mask.
Abstract translation: 制造纳米压印印模的方法包括通过重复进行压印处理，在印模基板上形成具有纳米尺寸宽度的抗蚀剂图案。 在压印工艺中，依次使用被选择性蚀刻的抗蚀剂层。 使用抗蚀剂图案作为蚀刻掩模蚀刻印模基板。
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12.发明授权Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters 有权交叉点存储器阵列，其制造方法，用于压印处理的主机以及制造主机的方法公开(公告)号：US08105884B2
公开(公告)日：2012-01-31
申请号：US12588107
申请日：2009-10-05
Applicant: Byung-kyu Lee , Du-hyun Lee , Myoung-jae Lee
Inventor： Byung-kyu Lee , Du-hyun Lee , Myoung-jae Lee
IPC: H01L21/82
CPC classification number: G11C13/0007 , G11C13/00 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/16
Abstract: A cross point memory array includes a structure in which holes are formed in an insulating layer and a storage node is formed in each of the holes. The storage node may include a memory resistor and a switching structure. The master for an imprint process used to form the cross-point memory array includes various pattern shapes, and the method of manufacturing the master uses various etching methods.
Abstract translation: 交叉点存储器阵列包括其中在绝缘层中形成空穴并且在每个孔中形成存储节点的结构。 存储节点可以包括存储器电阻器和开关结构。 用于形成交叉点存储器阵列的压印处理的主机包括各种图案形状，并且制造母版的方法使用各种蚀刻方法。
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公开(公告)号：US20090029298A1
公开(公告)日：2009-01-29
申请号：US11939766
申请日：2007-11-14
Applicant: Du-hyun LEE , Sung-hoon CHOA , Jin-seung SOHN
Inventor： Du-hyun LEE , Sung-hoon CHOA , Jin-seung SOHN
IPC: G03G5/16
CPC classification number: G11B5/855
Abstract: Provided is a method of manufacturing a patterned magnetic recording medium. The method includes (a) forming a patterned recording layer on an underlayer of a first substrate; (b) coating a polymer layer on a surface of a second substrate; (c) transferring the polymer layer on the patterned recording layer; and (d) exposing the surface of the patterned recording layer.
Abstract translation: 提供了制造图案化磁记录介质的方法。 该方法包括（a）在第一衬底的底层上形成图案化记录层; （b）在第二基板的表面上涂覆聚合物层; （c）将所述聚合物层转移到所述图案化记录层上; 和（d）曝光图案化记录层的表面。
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公开(公告)号：US20080061214A1
公开(公告)日：2008-03-13
申请号：US11710431
申请日：2007-02-26
Applicant: Du Hyun Lee , Jin Seung Sohn , Byung Kyu Lee , Eun Hyoung Cho
Inventor： Du Hyun Lee , Jin Seung Sohn , Byung Kyu Lee , Eun Hyoung Cho
CPC classification number: B29C59/022 , B29C33/424 , B29C33/56 , B29C35/0888 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: A nano-imprint mold and a method of manufacturing the same are provided, which can be used for replicating a nano-scaled structure to a polymer layer. The nano-imprint mold comprises: a substrate; a pattern portion having a prominence and depression pattern formed on the substrate; a hard layer formed of a material with a hardness higher than the pattern portion on a surface of the pattern portion; and a separation layer formed on a surface of the hard layer. In the nano-imprint mold of the present invention, an original pattern can be uniformly replicated even on a substrate with an irregular surface. Further, the pattern can be prevented from being damaged by pressure and being contaminated by synthetic resin, resulting in better accuracy and durability of the pattern.
Abstract translation: 提供了纳米压印模具及其制造方法，其可用于将纳米级结构复制到聚合物层。 纳米压印模具包括：基底; 图案部分，具有形成在所述基板上的突起和凹陷图案; 由图案部分的表面上的图案部分硬度高的材料形成的硬质层; 以及形成在所述硬质层的表面上的分离层。 在本发明的纳米压印模具中，即使在具有不规则表面的基板上也可以均匀地复制原始图案。 此外，可以防止图案被压力损坏并被合成树脂污染，导致图案更好的精度和耐久性。
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公开(公告)号：US20120152887A1
公开(公告)日：2012-06-21
申请号：US13170766
申请日：2011-06-28
Applicant: Byung-kyu Lee , Du-hyun Lee , Woong Ko
Inventor： Byung-kyu Lee , Du-hyun Lee , Woong Ko
CPC classification number: B41C1/02 , B29C33/3842 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0015
Abstract: Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
Abstract translation: 提供制造纳米压印印模的方法。 该方法可以包括在母板的表面上形成图案，在印模基板的表面上沉积蚀刻阻挡层，在主基板和印模基板的一个表面上涂覆光致抗蚀剂，在其上具有蚀刻阻挡层 形成光刻胶图案，通过将母版基板压靠在印模基板上，通过使用光致抗蚀剂图案蚀刻蚀刻阻挡层形成硬掩模，并使用硬掩模作为蚀刻掩模蚀刻印模基板。
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Patent Agency Ranking
公开(公告)号：US20120056355A1
公开(公告)日：2012-03-08
申请号：US13298404
申请日：2011-11-17
Applicant: Eun-Hyoung CHO , Sung Hoon CHOA , Jin Seung SOHN , Byung Kyu LEE , Du Hyun LEE
Inventor： Eun-Hyoung CHO , Sung Hoon CHOA , Jin Seung SOHN , Byung Kyu LEE , Du Hyun LEE
IPC: B29C59/16
CPC classification number: B05D5/02 , B29C47/92 , B82Y10/00 , B82Y40/00 , G03F7/00 , G03F7/0002 , Y10S977/887
Abstract: A process and an apparatus for performing a UV nano-imprint lithography are provided. The process uses a polymer pad which allows a uniform application of pressure to a patterned template and an easy removal of a residual resin layer. The apparatus includes a tilt and decentering corrector which allows an accurate alignment of layers during the nano-imprint lithography process.
Abstract translation: 提供了一种用于进行UV纳米压印光刻的工艺和设备。 该方法使用聚合物垫，其允许对图案化模板均匀施加压力并容易地除去残留的树脂层。 该设备包括倾斜和偏心校正器，其允许在纳米压印光刻工艺期间精确地对准层。
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17.发明授权公开(公告)号：US08029681B2
公开(公告)日：2011-10-04
申请号：US12470778
申请日：2009-05-22
Applicant: Kyoung-won Na , Sang-chul Sul , Du-hyun Lee , Myung-bok Lee , Hae-sung Kim , Jin-seung Sohn
Inventor： Kyoung-won Na , Sang-chul Sul , Du-hyun Lee , Myung-bok Lee , Hae-sung Kim , Jin-seung Sohn
CPC classification number: G11B5/865 , G11B5/855 , Y10S977/856 , Y10S977/887
Abstract: Provided are a master recording medium and a method of manufacturing the master recording medium. The master recording medium includes: a plate; and a magnetic layer which is formed on the plate for magnetically transferring of a servo pattern that is to be formed on a magnetic recording medium. The method of manufacturing a master recording medium includes: engraving a polymer layer by nano imprinting to form an engraved pattern corresponding to a servo pattern to be formed on a magnetic recording medium; forming a magnetic layer which fills in the engraved pattern of the polymer layer; forming a back plate layer on the magnetic layer; and performing processing to expose the servo pattern on a surface of the magnetic layer that is opposite a surface of the magnetic layer on which the back plate layer is formed.
Abstract translation: 提供了主记录介质和制造主记录介质的方法。 主记录介质包括：板; 以及磁性层，其形成在用于磁性传送待形成在磁记录介质上的伺服图案的板上。 制造主记录介质的方法包括：通过纳米压印雕刻聚合物层以形成对应于要形成在磁记录介质上的伺服图案的雕刻图案; 形成填充聚合物层的雕刻图案的磁性层; 在所述磁性层上形成背板层; 以及执行处理以在与形成有背板层的磁性层的表面相对的磁性层的表面上露出伺服图案。
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公开(公告)号：US07819652B2
公开(公告)日：2010-10-26
申请号：US11710431
申请日：2007-02-26
Applicant: Du Hyun Lee , Jin Seung Sohn , Byung Kyu Lee , Eun Hyoung Cho
Inventor： Du Hyun Lee , Jin Seung Sohn , Byung Kyu Lee , Eun Hyoung Cho
IPC: B29C59/00
CPC classification number: B29C59/022 , B29C33/424 , B29C33/56 , B29C35/0888 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: A nano-imprint mold and a method of manufacturing the same are provided, which can be used for replicating a nano-scaled structure to a polymer layer. The nano-imprint mold comprises: a substrate; a pattern portion having a prominence and depression pattern formed on the substrate; a hard layer formed of a material with a hardness higher than the pattern portion on a surface of the pattern portion; and a separation layer formed on a surface of the hard layer. In the nano-imprint mold of the present invention, an original pattern can be uniformly replicated even on a substrate with an irregular surface. Further, the pattern can be prevented from being damaged by pressure and being contaminated by synthetic resin, resulting in better accuracy and durability of the pattern.
Abstract translation: 提供了纳米压印模具及其制造方法，其可用于将纳米级结构复制到聚合物层。 纳米压印模具包括：基底; 图案部分，具有形成在所述基板上的突起和凹陷图案; 由图案部分的表面上的图案部分硬度高的材料形成的硬质层; 以及形成在所述硬质层的表面上的分离层。 在本发明的纳米压印模具中，即使在具有不规则表面的基板上也可以均匀地复制原始图案。 此外，可以防止图案被压力损坏并被合成树脂污染，导致图案更好的精度和耐久性。
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公开(公告)号：US20090061035A1
公开(公告)日：2009-03-05
申请号：US12035702
申请日：2008-02-22
Applicant: Eun-hyoung CHO , Sung-hoon CHOA , Jin-seung SOHN , Du-hyun LEE
Inventor： Eun-hyoung CHO , Sung-hoon CHOA , Jin-seung SOHN , Du-hyun LEE
IPC: B29C35/08
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00
Abstract: Provided is a dual-side imprinting lithography system that includes a medium supporting unit that supports a medium wherein both surfaces of the medium are coated with a ultraviolet (UV) hardening resin; a first mold supporting unit and a second mold supporting unit that respectively support a first mold and a second mold, disposed respectively above the medium supporting unit and under the medium supporting unit; a vertical moving device that moves vertically at least one of the medium supporting unit, the first mold supporting unit, and the second mold supporting unit; a first UV radiating device that is installed above the first mold supporting unit to radiate UV rays; and a second UV radiating device that is installed under the second mold supporting unit to radiate UV rays.
Abstract translation: 提供了一种双面压印光刻系统，其包括支撑介质的介质支撑单元，其中介质的两个表面都涂覆有紫外线（UV）硬化树脂; 第一模具支撑单元和第二模具支撑单元，其分别支撑分别位于介质支撑单元的上方和介质支撑单元下方的第一模具和第二模具; 垂直移动装置，其垂直移动介质支撑单元，第一模具支撑单元和第二模具支撑单元中的至少一个; 第一UV辐射装置，其安装在第一模具支撑单元上方以辐射紫外线; 以及第二UV辐射装置，其安装在所述第二模具支撑单元的下方以辐射紫外线。
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20.发明授权公开(公告)号：US09180608B2
公开(公告)日：2015-11-10
申请号：US13489968
申请日：2012-06-06
Applicant: Woong Ko , Ki-yeon Yang , Byung-kyu Lee , Du-hyun Lee , Jae-kwan Kim
Inventor： Woong Ko , Ki-yeon Yang , Byung-kyu Lee , Du-hyun Lee , Jae-kwan Kim
CPC classification number: B29C33/424 , B29C43/021 , B29C2043/025
Abstract: A stamp includes at least one protrusion on a protrusion pattern, and an end portion of the at least one protrusion may have a non-planarized surface. The end portion of the protrusion may have a concave structure, that is, the end portion includes a center region and an edge region, and the edge region is higher than the center region.
Abstract translation: 印模包括在突起图案上的至少一个突起，并且所述至少一个突起的端部可以具有非平坦化表面。 突起的端部可以具有凹形结构，即，端部包括中心区域和边缘区域，并且边缘区域高于中心区域。
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