公开(公告)号：US20120048467A1

公开(公告)日：2012-03-01

申请号：US13040149

申请日：2011-03-03

Applicant: Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

Inventor： Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

IPC: C23F1/08 ,  F28F27/00 ,  G05D7/06 ,  G05D23/19 ,  B05C11/00 ,  C23C16/52

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

公开(公告)号：US20110031216A1

公开(公告)日：2011-02-10

申请号：US12851606

申请日：2010-08-06

Applicant: BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

Inventor： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

IPC: C23F1/00

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

公开(公告)号：US07848840B2

公开(公告)日：2010-12-07

申请号：US12052024

申请日：2008-03-20

Applicant: Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D Nguyen ,  Chunlei Zhang

Inventor： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D Nguyen ,  Chunlei Zhang

IPC: G06F19/00 ,  G05B13/00 ,  G05B11/42 ,  G05D23/00

CPC classification number: G05D23/1904 ,  G05B11/42 ,  H01L21/67098 ,  H01L21/67248

Abstract: Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

Abstract translation: 半导体制造设备中自动控制工艺参数的方法和系统。 一个实施例提供了PID控制器在配方步骤中的增益调度。 一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度， 一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。 方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。

公开(公告)号：US20090297374A1

公开(公告)日：2009-12-03

申请号：US12127216

申请日：2008-05-27

Applicant: Brady Gallwey ,  Roy Tilford Jackson ,  Duy D. Nguyen ,  C. Tom Brannon

Inventor： Brady Gallwey ,  Roy Tilford Jackson ,  Duy D. Nguyen ,  C. Tom Brannon

IPC: F04B39/00 ,  F01B9/00

CPC classification number: F04B9/042 ,  F04B39/0027

Abstract: In at least some embodiments, a pump includes a turning member and a reciprocating member coupled to the turning member, the reciprocating member performing a pumping motion as the turning member turns. The pump also includes at least one stabilization component in contact with the reciprocating member to stabilize the pumping motion.

Abstract translation: 在至少一些实施例中，泵包括转动构件和联接到转动构件的往复运动构件，往复运动构件随着转动构件转动而执行泵送运动。 泵还包括与往复运动件接触的至少一个稳定部件，以稳定泵送运动。

公开(公告)号：US20090177310A1

公开(公告)日：2009-07-09

申请号：US12052024

申请日：2008-03-20

Applicant: Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D. Nguyen ,  Chunlei Zhang

Inventor： Ritchie Dao ,  Derek Brodie ,  Scott Olszewski ,  Duy D. Nguyen ,  Chunlei Zhang

IPC: G06F17/00 ,  G05D23/32

CPC classification number: G05D23/1904 ,  G05B11/42 ,  H01L21/67098 ,  H01L21/67248

Abstract: Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

Abstract translation: 半导体制造设备中自动控制工艺参数的方法和系统。 一个实施例提供了PID控制器在配方步骤中的增益调度。 一个实施例提供了一种用于在半导体制造过程中控制卡盘温度的方法，该方法在PID控制器中采用第一组比例积分微分（PID）值来控制第一设定点的卡盘温度， 一个过程配方，并且在该PID控制器中采用第二组PID值来控制在第二设定点不同于第一设定点的卡盘温度。 方法和系统提供了减少的控制器响应时间，其中过程配方的步骤之间的过程参数设定范围广泛。