公开(公告)号：US07750353B2

公开(公告)日：2010-07-06

申请号：US11350751

申请日：2006-02-10

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC: H01L21/00

CPC classification number: H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US20100108984A1

公开(公告)日：2010-05-06

申请号：US12534226

申请日：2009-08-03

Applicant: Kyung Sang CHO ,  Byoung Lyong CHOI ,  Eun Kyung LEE

Inventor： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Eun Kyung LEE

IPC: H01L33/00 ,  H01L21/28

CPC classification number: H05B33/14 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/502 ,  H01L51/5048

Abstract: A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.

Abstract translation: 一种量子点电致发光器件，包括衬底，设置在衬底上的量子点发光层，将电荷载流子注入量子点发光层的第一电极，注入电荷载流子的第二电极，其具有相反的 电荷比由第一电极注入的电荷载流子进入量子点发光层，设置在第一电极和量子点发光层之间的空穴传输层和设置在第二电极和量子点发光层之间的电子传输层 量子点发光层，其中量子点发光层具有与空穴传输层接触的第一表面和与电子传输层接触的第二表面，并且其中第一表面具有有机配体分布 不同于第二表面的有机配体分布。

公开(公告)号：US07692029B2

公开(公告)日：2010-04-06

申请号：US11116326

申请日：2005-04-28

Applicant: Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

Inventor： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

IPC: C07D409/14 ,  C07D417/14 ,  C07D413/14 ,  H01L51/00

CPC classification number: H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

Abstract: A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

Abstract translation: 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

公开(公告)号：US07675059B2

公开(公告)日：2010-03-09

申请号：US11976127

申请日：2007-10-22

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

IPC: H01L35/24 ,  H01L51/00

CPC classification number: C08F212/32 ,  C08F212/14 ,  H01L51/0036 ,  H01L51/052 ,  C08F222/36 ,  C08F2222/404

Abstract: Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor.

Abstract translation: 本文公开了共聚物，其可以包括侧链，其可以降低绝缘层的表面能，从而改善半导体材料的对准，以及包括具有增加的交联度的光反应性官能团的侧链，从而改善 使用其制造的有机薄膜晶体管的特征，包括共聚物的有机绝缘层组合物，有机绝缘层，有机薄膜晶体管，包含该共聚物的有机绝缘层组合物，包含其的电子器件及其制造方法。 根据实施例的共聚物，可以降低绝缘层的表面能，从而可以提高半导体材料的取向，从而提高阈值电压和电荷迁移率并减少驱动时的滞后产生 晶体管。

公开(公告)号：US07649192B2

公开(公告)日：2010-01-19

申请号：US11369859

申请日：2006-03-08

Applicant: Byoung-lyong Choi ,  Eun-kyung Lee

Inventor： Byoung-lyong Choi ,  Eun-kyung Lee

IPC: H01L29/06

CPC classification number: B82Y30/00 ,  C30B11/12 ,  C30B29/605 ,  Y10S977/721 ,  Y10S977/762 ,  Y10S977/768 ,  Y10S977/789 ,  Y10S977/81 ,  Y10S977/938

Abstract: Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Abstract translation: 提供纳米线及其制造方法。 该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层以形成催化剂，将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

公开(公告)号：US07625812B2

公开(公告)日：2009-12-01

申请号：US11362897

申请日：2006-02-27

Applicant: Byoung-lyong Choi ,  Wan-jun Park ,  Eun-kyung Lee ,  Jao-woong Hyun

Inventor： Byoung-lyong Choi ,  Wan-jun Park ,  Eun-kyung Lee ,  Jao-woong Hyun

IPC: H01L21/38

CPC classification number: B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/861

Abstract: A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Abstract translation: 一种制造硅纳米线的方法，包括在硅衬底的表面上形成微槽，在硅衬底上形成掺杂有第一掺杂剂的第一掺杂层，并在第一掺杂层和第一掺杂层之间形成掺杂有第二掺杂剂的第二掺杂层 在硅衬底上形成金属层，通过加热硅衬底的微槽内的金属层并使用热处理在催化剂和硅衬底之间生长纳米线，形成催化剂。

公开(公告)号：USD601603S1

公开(公告)日：2009-10-06

申请号：US29314366

申请日：2009-03-24

Applicant: Seung-ho Jang ,  Eun-kyung Lee ,  Ki-jin Kwon

Designer： Seung-ho Jang ,  Eun-kyung Lee ,  Ki-jin Kwon

公开(公告)号：US20090206330A1

公开(公告)日：2009-08-20

申请号：US12219195

申请日：2008-07-17

Applicant: Eun Kyung Lee ,  Joo Young Kim ,  Jong Baek Seon

Inventor： Eun Kyung Lee ,  Joo Young Kim ,  Jong Baek Seon

IPC: H01L51/00 ,  C08F26/06

CPC classification number: H01L51/052

Abstract: An organic insulator composition according to example embodiments may include an organic insulating polymer and an epoxy-based crosslinking agent. The epoxy-based crosslinking agent may have an alkyl group or a fluorine-based side chain. The organic insulator composition may be used to form an organic insulating layer having increased chemical resistance. The organic insulating layer may be used in an organic thin film transistor as a gate insulating layer. Consequently, the occurrence of hysteresis may be reduced or prevented during the operation of the organic thin film transistor, thus resulting in relatively homogeneous properties.

Abstract translation: 根据示例性实施方案的有机绝缘体组合物可以包括有机绝缘聚合物和环氧基交联剂。 环氧类交联剂可以具有烷基或氟类侧链。 有机绝缘体组合物可用于形成具有增加的耐药性的有机绝缘层。 有机绝缘层可以用作有机薄膜晶体管作为栅极绝缘层。 因此，在有机薄膜晶体管的操作期间可以减少或防止滞后的发生，从而导致相对均匀的特性。

公开(公告)号：USD596218S1

公开(公告)日：2009-07-14

申请号：US29310173

申请日：2008-07-30

Applicant: Tae-hwan Kim ,  Eun-kyung Lee

Designer： Tae-hwan Kim ,  Eun-kyung Lee

公开(公告)号：US20090008628A1

公开(公告)日：2009-01-08

申请号：US12031287

申请日：2008-02-14

Applicant: Byoung Lyong CHOI ,  Kyung Sang CHO ,  Eun Kyung LEE ,  O Gweon SEO

Inventor： Byoung Lyong CHOI ,  Kyung Sang CHO ,  Eun Kyung LEE ,  O Gweon SEO

IPC: H01L33/00 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L51/5296 ,  B82Y20/00 ,  H01L51/0545 ,  H01L51/5012 ,  H01L51/5203

Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

Abstract translation: 公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层， 与这些电极平行的方向。 在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命 发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。