公开(公告)号：US5789761A

公开(公告)日：1998-08-04

申请号：US645816

申请日：1996-05-14

申请人： Hirofumi Ihara ,  Kohji Nakashima ,  Susumu Ohi ,  Shin Koide

发明人： Hirofumi Ihara ,  Kohji Nakashima ,  Susumu Ohi ,  Shin Koide

IPC分类号： G02B5/20 ,  G02B1/11 ,  G02B1/113 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  H01L21/336 ,  H01L29/786 ,  G02F1/1343 ,  H01L29/04 ,  H01L37/036

CPC分类号： H01L29/78633 ,  G02F1/136209 ,  G02F1/133502 ,  G02F1/133512 ,  G02F1/1368

摘要： A thin-film transistor (TFT) array for preventing the light reflected inside a liquid crystal panel from entering a channel layer, while suppressing an increase of stray capacitance. A light shading film and an antireflection film atop source and drain electrodes are made of semiconductor layers and are spaced from each other on a TFT. The reduction in reflected light prevents an increase in an off current and therefore improves the quality of a liquid crystal display.

摘要翻译： 一种薄膜晶体管（TFT）阵列，用于防止在液晶面板内反射的光进入沟道层，同时抑制杂散电容的增加。 源极和漏极顶部的遮光膜和抗反射膜由半导体层制成并且在TFT上彼此间隔开。 反射光的减少防止了截止电流的增加，从而提高了液晶显示器的质量。

公开(公告)号：US20080074586A1

公开(公告)日：2008-03-27

申请号：US11787013

申请日：2007-04-13

申请人： Michiaki Sakamoto ,  Takahiko Watanabe ,  Hirofumi Ihara ,  Hironori Kikkawa ,  Mamoru Okamoto ,  Shinichi Nakata ,  Yuji Yamamoto ,  Masayoshi Suzuki ,  Teruaki Suzuki ,  Toshiya Ishii ,  Hiroshi Kanoh

发明人： Michiaki Sakamoto ,  Takahiko Watanabe ,  Hirofumi Ihara ,  Hironori Kikkawa ,  Mamoru Okamoto ,  Shinichi Nakata ,  Yuji Yamamoto ,  Masayoshi Suzuki ,  Teruaki Suzuki ,  Toshiya Ishii ,  Hiroshi Kanoh

IPC分类号： G02F1/1335

CPC分类号： G02F1/134363

摘要： In a liquid crystal display device comprising a first substrate 101 having a color filter, a second substrate 131 and a liquid crystal layer disposed therebetween, a color filter layer 110 is disposed on a protection film 108 of a thin film transistor formed on the first substrate 101 so as to be partitioned by a light shielding portion 111, and a common electrode 103 is disposed thereon. A pixel electrode to be connected to a source electrode 107 is disposed through a through hole formed in an overcoat layer (interlayer separation film) 112. On the first substrate below the color filter layer 110 are provided plural scan signal electrodes, plural video signal electrodes crossing the scan signal electrodes in a matrix form, plural thin film transistors formed in association with the crossing points between the electrodes. Each pixel is provided with a common electrode 103 which is connected over plural pixels through a common electrode wire to supply reference potential, and a pixel electrode 114 which is connected to the corresponding thin film transistor and disposed so as to confront the common electrode in the pixel area.

摘要翻译： 在包括具有滤色器的第一基板101，第二基板131和设置在其间的液晶层的液晶显示装置中，滤色器层110设置在形成在第一基板上的薄膜晶体管的保护膜108上 101被遮光部分111分隔，并且公共电极103设置在其上。 要连接到源电极107的像素电极通过形成在外涂层（层间隔离膜）112中的通孔布置。 在滤色器层110下面的第一基板上设置有多个扫描信号电极，以矩阵形式与扫描信号电极交叉的多个视频信号电极，与电极之间的交叉点相关联地形成的多个薄膜晶体管。 每个像素设置有公共电极103，其通过公共电极线连接在多个像素上以提供参考电位;以及像素电极114，其连接到相应的薄膜晶体管，并且被设置为在面对公共电极的情况下 像素区域。

公开(公告)号：US07088401B1

公开(公告)日：2006-08-08

申请号：US09609169

申请日：2000-06-30

申请人： Hirofumi Ihara ,  Wakahiko Kaneko ,  Takayasu Iida

发明人： Hirofumi Ihara ,  Wakahiko Kaneko ,  Takayasu Iida

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1333 ,  H01L29/04

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/124

摘要： A liquid crystal display device includes first and second electrodes and an insulating film. The first electrode is formed on a substrate as one of two electrodes of an accumulation capacitor and applied with a voltage. The insulating film is formed on the first electrode to cover the first electrode. The second electrode is formed on the first electrode via the insulating film as the other electrode of the accumulation capacitor and including a first conductive film and a second conductive film formed on the first conductive film.

摘要翻译： 液晶显示装置包括第一和第二电极和绝缘膜。 第一电极形成在作为累积电容器的两个电极中的一个的衬底上并施加电压。 绝缘膜形成在第一电极上以覆盖第一电极。 第二电极通过作为积累电容器的另一个电极的绝缘膜形成在第一电极上，并且包括形成在第一导电膜上的第一导电膜和第二导电膜。

公开(公告)号：US06890783B2

公开(公告)日：2005-05-10

申请号：US10242011

申请日：2002-09-12

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/84 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/036

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极， 通过蚀刻除去沟道间隙的+非晶硅层。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06870592B1

公开(公告)日：2005-03-22

申请号：US09594721

申请日：2000-06-16

申请人： Yuji Yamamoto ,  Mamoru Okamoto ,  Michiaki Sakamoto ,  Takahiko Watanabe ,  Hirofumi Ihara ,  Hironori Kikkawa ,  Shinichi Nakata

发明人： Yuji Yamamoto ,  Mamoru Okamoto ,  Michiaki Sakamoto ,  Takahiko Watanabe ,  Hirofumi Ihara ,  Hironori Kikkawa ,  Shinichi Nakata

IPC分类号： G02F1/133 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/136227 ,  G02F1/13394

摘要： In a liquid-crystal display panel, columnar spacers are formed on a substrate on the transparent electrode side in minimally a part of the pixel parts of a plurality of pixel parts, in which there is little variation in the film thickness of a plurality of films formed over the substrate.

摘要翻译： 在液晶显示面板中，在多个像素部的像素部分的最少部分的透明电极侧的基板上形成柱状间隔物，其中多个膜的膜厚变化很小 形成在基板上。

公开(公告)号：US20050041991A1

公开(公告)日：2005-02-24

申请号：US10896939

申请日：2004-07-23

申请人： Hirofumi Ihara ,  Tomoyuki Noguchi ,  Yasuhiro Nonaka ,  Tadayuki Kajiwara ,  Masahiro Samei ,  Hideki Tatematsu

发明人： Hirofumi Ihara ,  Tomoyuki Noguchi ,  Yasuhiro Nonaka ,  Tadayuki Kajiwara ,  Masahiro Samei ,  Hideki Tatematsu

IPC分类号： G03G15/20

CPC分类号： G03G15/2039 ,  G03G2215/2016 ,  G03G2215/2032

摘要： A heat generating member for fixing a toner image onto a recording medium, an induction heating means arranged to oppose to the heat generating member, for generating heat in the heat generating member by electromagnetic induction, an inverter circuit for driving the induction heating means, a power controlling means for controlling a power value that is output from the inverter circuit, a power-value calculating means for calculating the power value, a power-value sensing means for acquiring the power value output from the power controlling means, and a temperature sensing means for sensing a temperature at least at one point of the heat generating member are provided, and thus either the power value sensed by the power-value sensing means or a temperature value sensed by the temperature sensing means is used as a reference value used to calculate the power value by the power-value calculating means. Therefore, the image fixing device can be controlled with the high reliability.

摘要翻译： 一种用于将调色剂图像定影到记录介质上的发热部件，与发热部件相对的感应加热部件，用于通过电磁感应产生发热部件的热量;驱动感应加热机构的逆变器电路; 用于控制从逆变器电路输出的功率值的功率控制装置，用于计算功率值的功率值计算装置，用于获取从功率控制装置输出的功率值的功率值感测装置和温度感测 提供用于感测至少在发热元件的一个点处的温度的装置，因此由功率值检测装置检测到的功率值或由温度感测装置感测的温度值被用作用于 通过功率值计算装置计算功率值。 因此，可以高可靠性地控制图像定影装置。

公开(公告)号：US06632696B2

公开(公告)日：2003-10-14

申请号：US09745657

申请日：2000-12-20

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： H01L2100

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到 提供TFT部分的半导体层。 在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸 形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。 在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06429917B1

公开(公告)日：2002-08-06

申请号：US09513758

申请日：2000-02-25

申请人： Mamoru Okamoto ,  Yuji Yamamoto ,  Michiaki Sakamoto ,  Shinichi Nakata ,  Hironori Kikkawa ,  Takahiko Watanabe ,  Hirofumi Ihara

发明人： Mamoru Okamoto ,  Yuji Yamamoto ,  Michiaki Sakamoto ,  Shinichi Nakata ,  Hironori Kikkawa ,  Takahiko Watanabe ,  Hirofumi Ihara

IPC分类号： G02F11333

CPC分类号： G02F1/136227 ,  G02F1/133509 ,  G02F1/1339 ,  G02F2001/136222

摘要： This invention provides a color liquid-crystal panel comprising the first substrate having pixel electrodes on which are formed a thin-film transistor as a switching element for each pixel, which is covered by a passivation film, and a color filter layer and a black matrix on the passivation film, which are covered by an overcoat layer, and where the first substrate and the second substrate having a transparent common electrode facing the first substrate are put together via a sealer, forming an inner space which is filled with a liquid-crystal material, wherein a frame-shaped black matrix is formed on the first substrate, covering the periphery of the first substrate.

摘要翻译： 本发明提供了一种彩色液晶面板，包括具有像素电极的第一基板，在其上形成薄膜晶体管作为每个像素的开关元件，被钝化膜覆盖，滤色器层和黑矩阵 在由覆盖层覆盖的钝化膜上，并且其中具有面向第一基板的透明公共电极的第一基板和第二基板经由密封件放置在一起，形成填充有液晶的内部空间 材料，其中在所述第一基板上形成框状黑矩阵，覆盖所述第一基板的周边。

公开(公告)号：US5546205A

公开(公告)日：1996-08-13

申请号：US249624

申请日：1994-05-25

申请人： Osamu Sukegawa ,  Hirofumi Ihara

发明人： Osamu Sukegawa ,  Hirofumi Ihara

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/133

CPC分类号： G02F1/136213

摘要： In an active matrix liquid crystal display panel, each pixel electrode is connected to a first drain bus line through a thin film transistor which is formed adjacent to an intersection between the first drain bus line and an orthogonal gate bus line. A compensating capacitor lower electrode extends from the gate bus line at a position near to a second drain bus line which is adjacent to the pixel electrode in such a manner that the pixel electrode is positioned between the first and second drain bus lines. A compensating capacitor upper electrode is formed integrally with a source electrode of the thin film transistor, to extend along the pixel electrode so as to overlap above the compensating capacitor lower electrode through an insulator layer. Thus, a compensating capacitor is formed of the compensating capacitor lower and upper electrodes and is connected to a gate-source capacitance of the thin film transistor. A change in the gate-source capacitance caused by the positional deviation in the alignment between a gate electrode and the source electrode of the thin film transistor can be compensated by the inverse change in the capacitance of the associated compensating capacitor, without decreasing the aperture ratio of the pixel.

摘要翻译： 在有源矩阵液晶显示面板中，每个像素电极通过与第一排出母线和正交栅极总线之间的交点相邻形成的薄膜晶体管连接到第一漏极总线。 补偿电容器下电极在靠近与像素电极相邻的第二漏极总线的位置处从栅极总线延伸，使得像素电极位于第一和第二漏极总线之间。 补偿电容器上电极与薄膜晶体管的源电极一体形成，沿着像素电极延伸，以通过绝缘体层与补偿电容器下电极重叠。 因此，补偿电容器由补偿电容器下电极和上电极形成，并连接到薄膜晶体管的栅极 - 源极电容。 由薄膜晶体管的栅电极和源电极之间的对准位置偏移引起的栅源电容的变化可以通过相关的补偿电容器的电容的反向变化来补偿，而不会降低开口率 的像素。

公开(公告)号：US5426313A

公开(公告)日：1995-06-20

申请号：US231482

申请日：1994-04-22

申请人： Osamu Sukegawa ,  Hirofumi Ihara

发明人： Osamu Sukegawa ,  Hirofumi Ihara

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/78 ,  H01L29/786 ,  G02F1/133

CPC分类号： G02F1/136209

摘要： In a thin film transistor formed by a gate electrode formed on a transparent insulating substrate, a semiconductor active layer opposing the gate electrode, a drain electrode, and a source electrode connected to a transparent pixel electrode, an optical shield layer is located so as to approximately surround the semiconductor active layer.

摘要翻译： 在由形成在透明绝缘基板上的栅电极形成的薄膜晶体管中，与栅电极相对的半导体有源层，漏电极和与透明像素电极连接的源电极，光屏蔽层位于 大致围绕半导体活性层。