Card structure, socket structure, and assembly structure thereof
    12.
    发明授权
    Card structure, socket structure, and assembly structure thereof 有权
    卡结构,插座结构及其组装结构

    公开(公告)号:US08687373B2

    公开(公告)日:2014-04-01

    申请号:US12759671

    申请日:2010-04-13

    Abstract: A card structure includes a first element and a second element. The first element includes a first peripheral portion and a plurality of first contact points exposed by the first peripheral portion. The second element includes a second peripheral portion and a plurality of second contact points corresponding to the first contact points of the first element and exposed by the second peripheral portion. When the first and second elements are joined with each other, the first peripheral portion of the first element and the second peripheral portion of the second element are adjacent to each other, to juxtapose the first contact points of the first element and the second contact points of the second element to each other. The juxtaposed first and second contact points of the first and second elements are coupled to each other by a welding portion.

    Abstract translation: 卡结构包括第一元件和第二元件。 第一元件包括第一周边部分和由第一周边部分暴露的多个第一接触点。 第二元件包括第二周边部分和对应于第一元件的第一接触点并由第二周边部分露出的多个第二接触点。 当第一和第二元件彼此接合时,第一元件的第一周边部分和第二元件的第二周边部分彼此相邻,以将第一元件和第二接触点的第一接触点并置 的第二个元素。 第一和第二元件的并置的第一和第二接触点通过焊接部分彼此联接。

    Display panel
    14.
    发明授权
    Display panel 有权
    显示面板

    公开(公告)号:US08670102B2

    公开(公告)日:2014-03-11

    申请号:US13005538

    申请日:2011-01-13

    Abstract: A display panel includes an active device array substrate, an opposite substrate, and a liquid crystal layer. The active device array substrate includes a substrate and further includes a pixel array, signal lines, and first and second repairing lines all disposed on the substrate. The signal lines electrically connect the pixel array. The first repairing line includes first and second line segments respectively located on first and second sides of the pixel array. The first side is substantially perpendicular to the second side. The first and second line segments are electrically connected. The second repairing line includes third and fourth line segments respectively located on third and second sides of the pixel array. The third side is substantially parallel to the first side. The fourth and third line segments are electrically connected. The opposite substrate above the active device array substrate does not cover the first and third line segments.

    Abstract translation: 显示面板包括有源器件阵列衬底,相对衬底和液晶层。 有源器件阵列衬底包括衬底,并且还包括像素阵列,信号线以及全部设置在衬底上的第一和第二修复线。 信号线电连接像素阵列。 第一修复线包括分别位于像素阵列的第一和第二侧上的第一和第二线段。 第一侧基本垂直于第二侧。 第一和第二线段电连接。 第二修复线包括分别位于像素阵列的第三和第二侧上的第三和第四线段。 第三侧基本上平行于第一侧。 第四和第三线段电连接。 有源器件阵列衬底上方的相对衬底不覆盖第一和第三线段。

    Method and apparatus for supporting location services with roaming
    17.
    发明授权
    Method and apparatus for supporting location services with roaming 有权
    支持定位服务漫游的方法和装置

    公开(公告)号:US08548500B2

    公开(公告)日:2013-10-01

    申请号:US13369176

    申请日:2012-02-08

    CPC classification number: H04W4/02 H04W8/12 H04W64/00

    Abstract: Techniques for supporting location services with roaming are described. A method of supporting location services (LCS) for a mobile station roaming from a home network and communicating with a visited network includes receiving a domain name system (DNS) query at a DNS of the home network from a packet data serving node (PDSN) of the home network. The method also includes sending to the mobile station from the DNS of the home network an address of a serving position determining entity (S-PDE) in the visited network.

    Abstract translation: 描述了用于支持漫游的位置服务的技术。 支持从家庭网络漫游并与受访网络通信的移动站的位置服务(LCS)的方法包括:从分组数据服务节点(PDSN)接收家庭网络的DNS的域名系统(DNS)查询, 的家庭网络。 该方法还包括从归属网络的DNS向移动台发送访问网络中的服务位置确定实体(S-PDE)的地址。

    Method for forming semiconductor structure having protection layer for preventing laser damage
    18.
    发明授权
    Method for forming semiconductor structure having protection layer for preventing laser damage 有权
    用于形成具有用于防止激光损伤的保护层的半导体结构的方法

    公开(公告)号:US08541264B2

    公开(公告)日:2013-09-24

    申请号:US13548039

    申请日:2012-07-12

    CPC classification number: H01L23/5258 H01L2924/0002 H01L2924/00

    Abstract: A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

    Abstract translation: 提供一种用于形成半导体结构的方法,以防止用于吹送形成在半导体衬底上的金属层上的至少一个熔丝的能量引起对结构的损坏。 半导体结构包括器件,保护环,保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上,以将能量限制在其中。 保护层形成在密封环内,在设备和保险丝之间的至少一个金属层上,用于屏蔽器件不会直接暴露于能量。

    INFRARED ABSORBING FILTER AND LENS MODULE HAVING SAME
    19.
    发明申请
    INFRARED ABSORBING FILTER AND LENS MODULE HAVING SAME 失效
    带红外线吸收滤光片和镜头模块

    公开(公告)号:US20130222894A1

    公开(公告)日:2013-08-29

    申请号:US13454109

    申请日:2012-04-24

    CPC classification number: G02B5/22 G02B5/208 G02B13/14

    Abstract: An infrared absorbing filter includes a glass plate molded by melting a composition of raw materials and cooling the melted composition. The composition of raw materials includes 28-33 by percentage weight (wt %) of phosphorus pentoxide (P2O5), 14-33 wt % of A oxide (A2O), 0.15-4 wt % of B oxide (BO), 2.5-8 wt % of copper oxide (CuO), 1.4-1.65 wt % of aluminum oxide (Al2O3). Wherein A is one of alkali metals, A2O is one of oxidizing alkali metals, B is one of alkaline earth metals, BO is one of oxidizing alkaline earth metals.

    Abstract translation: 红外吸收滤光器包括通过熔化原料组合物并冷却熔融的组合物而模制的玻璃板。 原料的组成包括五氧化二磷(P 2 O 5)的重量百分比(wt%),氧化铝(A2O)为14-33wt%,氧化硼(BO)为0.15-4wt%,氧化硼(BO))为2.5-8wt% 重量百分比的氧化铜(CuO),1.4-1.65%(重量)的氧化铝(Al2O3)。 其中A为碱金属之一,A2O为氧化性碱金属之一,B为碱土金属之一,BO为氧化碱土金属之一。

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