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公开(公告)号：US20150085732A1
公开(公告)日：2015-03-26
申请号：US14008616
申请日：2012-03-05
Applicant: Dongshan Bao , Li Jun Pan , Hui juan Yao , Yubao Zhou , Xiaoyan Yu , Jun Lei , Jing Wang , Shenfa Liu , Zhigang Yan
Inventor： Dongshan Bao , Li Jun Pan , Hui juan Yao , Yubao Zhou , Xiaoyan Yu , Jun Lei , Jing Wang , Shenfa Liu , Zhigang Yan
CPC classification number: H04W52/10 , H04W4/06 , H04W52/12 , H04W52/146 , H04W52/226 , H04W52/241 , H04W52/242 , H04W52/262 , H04W72/042 , H04W72/0473
Abstract: A method for open loop uplink access power control comprises: estimating the uplink transmission path loss according to received signal power of a station (STA) and the transmit power of a central access point (CAP); determining the transmission bandwidth allocated by the CAP for uplink transmission and deviation adjustment of the CAP; determining a modulation-coding mode and determining requirements of the carrier-to-noise ratio corresponding to the modulation-coding mode; and calculating a target value for adjusting the transmit power of the STA. Also disclosed is a device for open loop uplink access power control.
Abstract translation: 一种用于开环上行链路接入功率控制的方法，包括：根据站（STA）的接收信号功率和中央接入点（CAP）的发射功率估计上行链路传输路径损耗; 确定由CAP分配的用于上行链路传输的传输带宽和CAP的偏差调整; 确定调制编码模式并确定与调制编码模式相对应的载波噪声比的要求; 以及计算用于调整所述STA的发送功率的目标值。 还公开了一种用于开环上行链路接入功率控制的装置。
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公开(公告)号：US08968821B2
公开(公告)日：2015-03-03
申请号：US11947079
申请日：2007-11-29
Applicant: Jing Wang , Chun Bae Park
Inventor： Jing Wang , Chun Bae Park
IPC: B05D5/00 , G02F1/1339
CPC classification number: G02F1/13392
Abstract: An apparatus for spraying spacers with an alignment liquid, including a container for transporting the alignment liquid mixed with the spacers therein and a plurality of nozzles provided on a bottom of the container. The alignment liquid with spacers mixed therein is sprayed through the plurality of nozzles under a same inner pressure, thereby forming an alignment layer on the substrate supported.
Abstract translation: 一种用于用对准液喷射间隔物的装置，包括用于输送与间隔物混合的对准液的容器和设置在容器底部的多个喷嘴。 混合有间隔物的取向液在相同的内压下通过多个喷嘴喷射，从而在被支撑的基板上形成取向层。
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公开(公告)号：US08860143B2
公开(公告)日：2014-10-14
申请号：US13202411
申请日：2011-08-02
Applicant: Mei Zhao , Renrong Liang , Jing Wang , Jun Xu
Inventor： Mei Zhao , Renrong Liang , Jing Wang , Jun Xu
IPC: H01L21/70 , H01L21/3115 , H01L21/8238 , H01L29/51 , H01L29/66
CPC classification number: H01L21/823842 , H01L21/31155 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/66659
Abstract: A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a gate dielectric layer formed on the substrate; a metal gate electrode layer formed on the gate dielectric layer; and at least one metal-containing adjusting layer for adjusting a work function of the semiconductor structure, in which an interfacial layer is formed between the substrate and the gate dielectric layer, and an energy of bond between a metal atom in the metal-containing adjusting layer and an oxygen atom is larger than that between an atom of materials forming the gate dielectric layer or the interfacial layer and an oxygen atom. Further, a method for forming the semiconductor structure is also provided.
Abstract translation: 提供半导体结构。 半导体结构包括：基板; 形成在所述基板上的栅介质层; 形成在栅介质层上的金属栅电极层; 以及至少一个用于调节半导体结构的功函数的含金属的调节层，其中在所述基底和所述栅极电介质层之间形成界面层，以及所述含金属调节中的金属原子之间的键的能量 层和氧原子大于形成栅极介电层或界面层的材料的原子和氧原子之间的氧原子。 此外，还提供了一种用于形成半导体结构的方法。
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公开(公告)号：US08860140B2
公开(公告)日：2014-10-14
申请号：US13147470
申请日：2011-06-24
Applicant: Renrong Liang , Ning Cui , Jing Wang , Jun Xu
Inventor： Renrong Liang , Ning Cui , Jing Wang , Jun Xu
IPC: H01L29/78 , H01L29/66 , H01L29/49 , H01L29/739
CPC classification number: H01L29/7391 , H01L29/4908 , H01L29/4983 , H01L29/66356
Abstract: The present disclosure provides a TFET, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; a gate stack formed on the channel region, wherein the gate stack comprises: a gate dielectric layer, and at least a first gate electrode and a second gate electrode distributed in a direction from the source region to the drain region and formed on the gate dielectric layer, and the first gate electrode and the second gate electrode have different work functions; and a first side wall and a second side wall formed on a side of the first gate electrode and on a side of the second gate electrode respectively.
Abstract translation: 本公开提供了一种TFET，其包括：基板; 形成在所述衬底中的沟道区，以及形成在所述沟道区的两侧的源极区和漏极区; 形成在所述沟道区上的栅极叠层，其中所述栅极堆叠包括：栅极电介质层，以及至少第一栅极电极和第二栅极电极，所述栅极电极和第二栅极电极沿着从所述源极区域到所述漏极区域的方向分布并形成在所述栅极电介质上 第一栅电极和第二栅电极具有不同的功函数; 以及分别形成在第一栅电极的一侧和第二栅极侧的第一侧壁和第二侧壁。
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公开(公告)号：US08849010B2
公开(公告)日：2014-09-30
申请号：US12874468
申请日：2010-09-02
CPC classification number: G06T5/006 , G06T3/0068 , G06T2207/10012
Abstract: The present invention relates to a method and a system for rectifying images. An original stereo image pair is obtained, and the epipolar lines corresponding to the original stereo image pair are parallelized to obtain a first transformed stereo image pair. Epipolar lines corresponding to the first transformed stereo image pair are collinearized to obtain a second transformed stereo image pair. The present invention parallelizes and collinearizes the epipolar lines corresponding to the stereo image pair after the images are rectified.
Abstract translation: 本发明涉及一种整流图像的方法和系统。 获得原始立体图像对，并且对应于原始立体图像对的对极线被并行以获得第一变换立体图像对。 对应于第一变换立体图像对的对极线共线以获得第二变换立体图像对。 本发明在对图像进行整流之后，对应于立体图像对的对极线并行化并共线。
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Patent Agency Ranking
16.发明授权Method, apparatus, and system for controlling conference including telepresence conferencing site 有权用于控制会议的方法，装置和系统，包括远程呈现会议现场公开(公告)号：US08848023B2
公开(公告)日：2014-09-30
申请号：US13484015
申请日：2012-05-30
Applicant: Jiaoli Wu , Honghong Su , Jing Wang , Xianyi Chen
Inventor： Jiaoli Wu , Honghong Su , Jing Wang , Xianyi Chen
Abstract: Embodiments of the present invention disclose a method, an apparatus, and a system for controlling a conference including a telepresence conference site, and relate to the field of network communications technologies. An embodiment of the present invention provides a method for controlling a conference site in a telepresence conference, including: receiving attribute information of a telepresence conference site sent by the telepresence conference site, where the telepresence conference site includes at least two video areas; and performing conference control according to the received attribute information of the telepresence conference site. Through application of the present invention, the conference control process of the telepresence conference site may be simplified.
Abstract translation: 本发明的实施例公开了一种用于控制会议的方法，装置和系统，所述会议包括远程呈现会议地点，并涉及网络通信技术领域。 本发明的实施例提供了一种用于控制远程呈现会议中的会议场所的方法，包括：接收由所述远程呈现会场发送的远程出席会议站点的属性信息，所述远程呈现会场包括至少两个视频区域; 并根据接收到的远程呈现会议的属性信息进行会议控制。 通过应用本发明，可以简化远程呈现会场的会议控制处理。
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公开(公告)号：US08837348B2
公开(公告)日：2014-09-16
申请号：US13387031
申请日：2010-07-14
Applicant: Jing Wang , Guangyi Liu , Xiaodong Shen
Inventor： Jing Wang , Guangyi Liu , Xiaodong Shen
CPC classification number: H04W72/0493 , H04B7/15542 , H04B7/15592 , H04B7/2606 , H04W72/04 , H04W84/047
Abstract: A relay transmission method, cell base station and relay station, for improving the average spectrum efficiency and throughput of a cell, are provided by the present invention. Said relay transmission method includes that when data transmission is performed between Access Points APs and each user, AP identification set groups which consist of the AP identification sets without intersection, are determined from the AP identification sets corresponding to the users, wherein the AP identification set comprises AP identifications of the APs which can provide services for the user; according to the determined AP identification set groups, same resources are allocated to the users corresponding to the AP identification sets in the same AP identification set group, and different resources are allocated to the users corresponding to the AP identification sets in the different AP identification set groups; and each AP in the AP identification set corresponding to each user is informed to provide services for the user by using the resources allocated to the user.
Abstract translation: 通过本发明提供了用于提高单元的平均频谱效率和吞吐量的中继传输方法，小区基站和中继站。 所述中继传输方法包括当从接入点AP和每个用户之间执行数据传输时，从与用户相对应的AP识别集确定AP无关的AP标识集合的AP识别集合组，其中，AP标识集 包括可以为用户提供服务的AP的AP标识; 根据确定的AP识别集组，将相同的资源分配给与同一AP识别集合中的AP识别集相对应的用户，并且将不同的资源分配给与不同AP识别集中的AP标识集相对应的用户 团体 并且通知对应于每个用户的AP识别集中的每个AP通过使用分配给用户的资源来为用户提供服务。
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公开(公告)号：US20140220919A1
公开(公告)日：2014-08-07
申请号：US14347914
申请日：2011-09-30
Applicant: Jun Yang , Yadunandana N Rao , Jing Wang , San-Shan Wang , Li Xiao
Inventor： Jun Yang , Yadunandana N Rao , Jing Wang , San-Shan Wang , Li Xiao
CPC classification number: H03J7/02 , H04B1/0028 , H04B1/16 , H04L27/16
Abstract: Embodiments include Direct-Conversion Receiver (DCR) apparatus, and methods for performing automatic frequency control based on a received signal. An initial frequency offset value is selected from a lookup table and applied to the receiver's local oscillator. Digital samples are generated based on the received signal, and stored in a buffer in sequential order. A DC estimator performs multiple iterations of a DC component estimation process. The process includes iteratively applying an analysis window to more recently-stored, buffered samples, in order to identify a set of the buffered samples. Within the set of buffered samples, an intermediate value between the amplitudes of two samples is determined (e.g., samples having the largest and smallest amplitudes). Between at least some of the multiple iterations, the number of samples that defines the size of the analysis window is increased.
Abstract translation: 实施例包括直接转换接收器（DCR）装置和基于接收信号进行自动频率控制的方法。 初始频率偏移值从查找表中选择并应用于接收机的本地振荡器。 数字样本是根据接收到的信号产生的，并按顺序存储在缓冲器中。 DC估计器执行DC分量估计过程的多次迭代。 该过程包括将分析窗口迭代地应用于最近存储的缓冲样本，以便识别一组缓冲样本。 在缓冲样本集合内，确定两个样本幅度之间的中间值（例如，具有最大和最小振幅的样本）。 在多个迭代中的至少一些之间，定义分析窗口的大小的样本数量增加。
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公开(公告)号：US08786017B2
公开(公告)日：2014-07-22
申请号：US13263222
申请日：2011-08-25
IPC: H01L27/12
CPC classification number: H01L29/78684 , H01L29/7846
Abstract: A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
Abstract translation: 提供了一种应变绝缘体上的结构，包括：硅衬底，其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层，其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层，形成在栅叠层下方的沟道区，以及形成在沟道区的侧面上的源极和漏极; 以及延伸到硅衬底中并填充有绝缘电介质材料以在沟道区域中产生应变的多个浅沟槽隔离结构。 此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。
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公开(公告)号：US08772873B2
公开(公告)日：2014-07-08
申请号：US13201903
申请日：2011-07-27
IPC: H01L27/12 , H01L21/336 , H01L29/786 , H01L21/28 , H01L21/762 , H01L29/66
CPC classification number: H01L29/78684 , H01L21/28255 , H01L21/76256 , H01L29/66742 , H01L29/78603
Abstract: A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided.
Abstract translation: 提供一种形成绝缘体上Ge结构的方法，包括以下步骤：在衬底（2000）上形成Ge层（1200）; 处理所述Ge层（1200）的第一表面以形成第一半导体金属 - 锗化物钝化层（1300）; 将第一半导体金属 - 锗化物钝化层（1300）与硅衬底（1100）接合，其中在所述硅衬底（1100）的表面上形成氧化物绝缘层; 并移除基板（2000）。 此外，还提供了通过该方法形成的绝缘体上Ge结构。
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