公开(公告)号：US09543475B2

公开(公告)日：2017-01-10

申请号：US14940720

申请日：2015-11-13

申请人： Jin-young Lim ,  Tan Sakong ,  Byoung-kyun Kim ,  Jong-hak Kim

发明人： Jin-young Lim ,  Tan Sakong ,  Byoung-kyun Kim ,  Jong-hak Kim

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L21/66 ,  G01R31/26 ,  H01L33/24 ,  H01L33/32 ,  H01L33/22 ,  H01L33/06 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.

摘要翻译： 发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，并且具有多个V型阱。 发光装置还包括在第一导电类型半导体层和第二导电类型半导体层之间的层质量改进层，并且具有多个V形凹坑，其具有与多个V形凹坑大致相同的尺寸和形状 活性层，其中层质量改进层是包括Al或In的III-V族III族半导体层。 由于改善的层质量，发光器件的发光质量得到改善。

公开(公告)号：US09349541B2

公开(公告)日：2016-05-24

申请号：US14239421

申请日：2012-12-18

申请人： Jong-Hak Kim ,  Jung-Tae Park ,  Harim Jeon ,  Sang Jin Kim

发明人： Jong-Hak Kim ,  Jung-Tae Park ,  Harim Jeon ,  Sang Jin Kim

IPC分类号： C01G23/047 ,  H01G9/20 ,  H01L31/18 ,  C01G23/053

CPC分类号： H01L31/042 ,  C01G23/047 ,  C01G23/0536 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/64 ,  C01P2006/12 ,  H01G9/2031 ,  H01L31/18 ,  Y02E10/542

摘要： Disclosed is a method for producing a mesoporous titanium dioxide thin film from a titanium precursor by using a polymer-grafted alumina composite as a support. The porous titanium dioxide thin film is obtained by using the polymer-grafted hybrid alumina composite as a support for sol-gel reaction, and thus it has a mesoporous structure and high surface area, thereby providing a high dye adsorption ratio. Therefore, a dye-sensitized solar cell using the mesoporous titanium dioxide thin film as a photoelectrode material has high energy conversion efficiency. In addition, it is possible to improve the long-term stability of a dye-sensitized solar cell through efficient infiltration of high-viscosity polymer and solid electrolyte as well as liquid electrolyte.

摘要翻译： 公开了一种通过使用聚合物接枝氧化铝复合材料作为载体从钛前体制备介孔二氧化钛薄膜的方法。 通过使用聚合物接枝的杂化氧化铝复合物作为溶胶 - 凝胶反应的载体，获得多孔二氧化钛薄膜，因此其具有介孔结构和高表面积，从而提供高的染料吸附比。 因此，使用介孔二氧化钛薄膜作为光电极材料的染料敏化太阳能电池具有高的能量转换效率。 此外，通过高粘度聚合物和固体电解质以及液体电解质的有效渗透，可以提高染料敏化太阳能电池的长期稳定性。

公开(公告)号：US20110156214A1

公开(公告)日：2011-06-30

申请号：US13062557

申请日：2009-09-07

申请人： Euijoon Yoon ,  Kookheon Char ,  Jong Hak Kim ,  Sewon Oh ,  Heeje Woo

发明人： Euijoon Yoon ,  Kookheon Char ,  Jong Hak Kim ,  Sewon Oh ,  Heeje Woo

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

摘要： Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.

摘要翻译： 提供一种氮化物薄膜结构及其形成方法。 如果氮化物薄膜形成在不是氮化物的衬底上，则衬底和氮化物薄膜之间的晶格常数差异会产生许多缺陷。 此外，存在由于基板和氮化物薄膜之间的热膨胀系数的差异使基板翘曲的问题。 为了解决这些问题，本发明提出了一种薄膜结构，其中在其上涂覆中空颗粒，即衬底上的中空结构，其上生长氮化物薄膜的方法和形成薄膜结构的方法。 根据本发明，由于可以通过中空结构获得外延横向过度生长（ELO）效应，因此可以形成高质量的氮化物薄膜。 由于调整薄膜结构中的折射率，所以在将薄膜结构体制造成诸如发光二极管（LED）的发光装置时，具有提高光提取效率的效果。 此外，当基板的热膨胀系数大于氮化物薄膜的热膨胀系数时，氮化物薄膜的总应力根据氮化物薄膜中的中空结构的压缩而降低，使得还具有防止 基材翘曲。