公开(公告)号：US5995188A

公开(公告)日：1999-11-30

申请号：US9741

申请日：1998-01-20

申请人： Seizaburo Shimizu ,  Hiroki Iwanaga ,  Katsuyuki Naito ,  Kazuyuki Sunohara ,  Shintaro Enomoto ,  Atsushi Sugahara

发明人： Seizaburo Shimizu ,  Hiroki Iwanaga ,  Katsuyuki Naito ,  Kazuyuki Sunohara ,  Shintaro Enomoto ,  Atsushi Sugahara

IPC分类号： G02F1/1333 ,  G02F1/1334 ,  G02F1/1343 ,  G02F1/1347 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  G09F9/46

CPC分类号： G02F1/1347 ,  G02F1/1334 ,  G02F1/13475

摘要： The liquid crystal display device comprises a first substrate, a second substrate opposite to the first substrate, a plurality of switching elements formed on a face of the first substrate, which is opposite to the second substrate, a common electrode formed on a face of the second substrate, the face being opposite to the first substrate, a plurality of liquid crystal layers stacked on the second substrate to hold the common electrode between the layers and the second substrate, and arranged between the first and second substrates a plurality of projection electrodes selectively formed on the liquid crystal layers and a plurality of pixel electrode each formed on a corresponding one of the liquid crystal layers. The pixel electrodes respectively formed between a corresponding couple of the liquid crystal layers are connected to a corresponding one of the switching elements formed on the first substrate through one or several of the protrusion electrode/electrodes. The several protrusion electrodes are brought into contact at each of the boundaries of the adjacent liquid crystal layers and connected in cascade.

摘要翻译： 液晶显示装置包括第一基板，与第一基板相对的第二基板，形成在与第二基板相对的第一基板的表面上的多个开关元件，形成在第一基板的表面上的公共电极 第二基板，所述面与所述第一基板相对，多个液晶层，堆叠在所述第二基板上，以将所述公共电极保持在所述层与所述第二基板之间，并且在所述第一和第二基板之间布置多个突起电极， 形成在液晶层上的多个像素电极，各自形成在相应的一个液晶层上。 分别形成在相应的液晶层之间的像素电极通过一个或几个突起电极/电极连接到形成在第一基板上的相应一个开关元件。 几个突起电极在相邻液晶层的每个边界处接触并且级联连接。

公开(公告)号：US5869420A

公开(公告)日：1999-02-09

申请号：US674861

申请日：1996-07-03

申请人： Katsuyuki Naito

发明人： Katsuyuki Naito

IPC分类号： B41M5/30 ,  B41M5/333 ,  B41M5/34

CPC分类号： B41M5/3333 ,  B41M5/305 ,  B41M5/3335 ,  B41M5/3336

摘要： A rewritable thermal recording medium comprises a recording material containing a color former and a developer. Recording-erasing of information is performed on the basis of a change in the state of the recording material. The developer is formed of a compound capable of forming a liquid crystal phase and/or represented by general formula (I) given below ##STR1## wherein Ar denotes a noncondensed polycyclic structure consisting of a plurality of ring structures connected to each other via any of a single bond, a vinylene bond and an ethynylene bond or a condensation polycyclic structure, X denotes an ether bond, a thioether bond, an ester bond or an amide bond, Y is an acidic group, R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a substituted or unsubstituted alkynyl group, m is an integer of 1 to 3, and n is 0 or 1.

摘要翻译： 可重写的热记录介质包括含有着色剂和显影剂的记录材料。 基于记录材料的状态的改变来进行信息的记录擦除。 显影剂由能够形成液晶相和/或由下面给出的通式（I）表示的化合物形成，其中Ar表示由彼此连接的多个环结构组成的非缩合多环结构 通过单键，亚乙烯基键和亚乙炔基键或缩合多环结构中的任一个，X表示醚键，硫醚键，酯键或酰胺键，Y是酸性基团，R是取代或未取代的 烷基，取代或未取代的烯基或取代或未取代的炔基，m为1〜3的整数，n为0或1。

公开(公告)号：US07924678B2

公开(公告)日：2011-04-12

申请号：US11495591

申请日：2006-07-31

申请人： Koichi Kubo ,  Hiroshi Watanabe ,  Katsuyuki Naito ,  Takahiro Hirai

发明人： Koichi Kubo ,  Hiroshi Watanabe ,  Katsuyuki Naito ,  Takahiro Hirai

IPC分类号： G11B7/00

CPC分类号： G11B9/08 ,  B82Y10/00 ,  G11B9/1409 ,  G11B9/1472 ,  G11B11/08

摘要： A recording/reproducing head includes a laminated body facing to a recording medium, the body including a first conductive layer, a first insulating layer and a second conductive layer which are sequentially stacked. The first conductive layer generates electrons and injects the electrons into the recording medium through the first insulating layer.

摘要翻译： 记录/再现头包括面向记录介质的层叠体，该主体包括依次层叠的第一导电层，第一绝缘层和第二导电层。 第一导电层产生电子并通过第一绝缘层将电子注入到记录介质中。

公开(公告)号：US07883930B2

公开(公告)日：2011-02-08

申请号：US12184428

申请日：2008-08-01

申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

IPC分类号： H01L21/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

摘要： A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

摘要翻译： 一种相变存储器，至少包括存储单元，该存储单元包括第一电极，设置在第一电极上的导电部分，并且具有设置在第一电极上的具有大致相同形状的至少两个导电体，导电体间隔开 通过具有高电阻的高电阻膜，设置在导电部分上并具有相变材料的记录层，其可以在具有第一电阻率的第一相位状态和第二相位状态之间变化，具有不同于第二电阻率的第二电阻率 第一电阻率和设置在记录层上的第二电极。

公开(公告)号：US20100264019A1

公开(公告)日：2010-10-21

申请号：US12829450

申请日：2010-07-02

申请人： Yoshiyuki Kamata ,  Katsuyuki Naito ,  Akira Kikitsu ,  Masatoshi Sakurai ,  Masahiro Oka

发明人： Yoshiyuki Kamata ,  Katsuyuki Naito ,  Akira Kikitsu ,  Masatoshi Sakurai ,  Masahiro Oka

IPC分类号： C23C14/46

CPC分类号： C23F4/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  H01J2237/30466 ,  H01J2237/3174

摘要： According to one embodiment, a method for manufacturing a magnetic recording medium includes forming patterns having protrusions and recesses of a ferromagnetic material onto a recording track section and a servo section on a substrate, forming a flattening film, a top surface of which is higher than that of the protrusion of the ferromagnetic material, onto the ferromagnetic material, and performing ion beam etching onto the flattening film up to a top surface of the protrusion of the ferromagnetic material, and determining an end point of flattening etching on the basis of a change in the total number of incident particles by means of an ion counter installed so as to be at an angle θ with respect to a perpendicular direction to the substrate in accordance with a material of the flattening film.

摘要翻译： 根据一个实施例，一种制造磁记录介质的方法包括将具有铁磁材料的突起和凹陷的图案形成在记录轨道部分和基板上的伺服部分上，形成平坦化膜，其顶表面高于 将铁磁材料的突出部分突出到铁磁材料上，并且对平坦化膜进行离子束蚀刻直到铁磁材料的突起的顶表面，并且基于变化确定平坦化蚀刻的终点 在通过以与角度为角度安装的离子计数器的入射颗粒的总数中; 相对于基板的垂直方向，根据平坦化膜的材料。

公开(公告)号：US20090042340A1

公开(公告)日：2009-02-12

申请号：US12249688

申请日：2008-10-10

申请人： Yuichi MOTOI ,  Katsuyuki Naito

发明人： Yuichi MOTOI ,  Katsuyuki Naito

IPC分类号： H01L21/82

CPC分类号： G11C17/16 ,  G11C16/0483 ,  G11C17/18 ,  H01L27/115 ,  H01L27/11568

摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

摘要翻译： 非易失性存储装置包括在基板上沿列方向配置的多个位线21， 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

公开(公告)号：US07266034B2

公开(公告)日：2007-09-04

申请号：US11366465

申请日：2006-03-03

申请人： Takahiro Hirai ,  Katsuyuki Naito ,  Koichi Kubo ,  Yuichi Motoi ,  Hiroshi Watanabe

发明人： Takahiro Hirai ,  Katsuyuki Naito ,  Koichi Kubo ,  Yuichi Motoi ,  Hiroshi Watanabe

IPC分类号： G11C7/00

CPC分类号： G11C16/3418 ,  G11C13/0033 ,  G11C13/0069 ,  G11C16/30 ,  G11C16/3431

摘要： An data recording device according to an aspect of the present invention includes a memory cell array in a memory chip, a refresh circuit which executes a refreshing of the memory cell array, a refresh control circuit which executes refreshing at a time interval which is shorter than a data hold time and manages a data hold time, and an internal power source which supplies a power source electric potential to the refresh circuit and the refresh control circuit in a state in which the data recording device is removed from an external device.

公开(公告)号：US20070140001A1

公开(公告)日：2007-06-21

申请号：US11533648

申请日：2006-09-20

申请人： Yuichi Motoi ,  Katsuyuki Naito

发明人： Yuichi Motoi ,  Katsuyuki Naito

IPC分类号： G11C11/34

CPC分类号： G11C17/16 ,  G11C16/0483 ,  G11C17/18 ,  H01L27/115 ,  H01L27/11568

摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

摘要翻译： 非易失性存储装置包括在基板上沿列方向配置的多个位线21， 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

公开(公告)号：US20070030747A1

公开(公告)日：2007-02-08

申请号：US11366465

申请日：2006-03-03

申请人： Takahiro Hirai ,  Katsuyuki Naito ,  Koichi Kubo ,  Yuichi Motoi ,  Hiroshi Watanabe

发明人： Takahiro Hirai ,  Katsuyuki Naito ,  Koichi Kubo ,  Yuichi Motoi ,  Hiroshi Watanabe

IPC分类号： G11C7/00

CPC分类号： G11C16/3418 ,  G11C13/0033 ,  G11C13/0069 ,  G11C16/30 ,  G11C16/3431

摘要： An data recording device according to an aspect of the present invention includes a memory cell array in a memory chip, a refresh circuit which executes a refreshing of the memory cell array, a refresh control circuit which executes refreshing at a time interval which is shorter than a data hold time and manages a data hold time, and an internal power source which supplies a power source electric potential to the refresh circuit and the refresh control circuit in a state in which the data recording device is removed from an external device.

摘要翻译： 根据本发明的一个方面的数据记录装置包括存储芯片中的存储单元阵列，执行存储单元阵列刷新的刷新电路，刷新控制电路，其以比 数据保持时间并管理数据保持时间;以及在从外部设备移除数据记录装置的状态下向刷新电路和刷新控制电路提供电源电位的内部电源。

公开(公告)号：US20060261379A1

公开(公告)日：2006-11-23

申请号：US11272751

申请日：2005-11-15

申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

IPC分类号： H01L29/768

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。