SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME
    12.
    发明申请
    SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME 审中-公开
    太阳能电池基板,其制造方法和使用该太阳能电池的太阳能电池

    公开(公告)号:US20140124028A1

    公开(公告)日:2014-05-08

    申请号:US14124867

    申请日:2012-06-08

    IPC分类号: H01L31/0216 H01L31/18

    摘要: One aspect of the present invention is a solar cell substrate, comprising: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other can be different metals. Additionally, a solar cell, which is another aspect of the present invention, comprises: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other comprise solar cell substrates which are of different metals; p-type light absorption layers formed on said solar cell substrates; n-type buffer layers formed on said light absorption layers; transparent windows formed on said buffer layers; and upper electrodes formed on said transparent windows.

    摘要翻译: 本发明的一个方面是太阳能电池基板,包括:下基板; 以及形成在所述下基板的上部的下电极,其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜,并且如果两个或更多个金属 形成层,彼此相邻的金属层可以是不同的金属。 此外,作为本发明的另一方面的太阳能电池包括:下基板; 以及形成在所述下基板的上部的下电极,其中在所述下基板和所述下电极之间包括具有至少一个或两个或更多个金属层的金属防扩散膜,并且如果两个或更多个金属 形成层,彼此相邻的金属层包括具有不同金属的太阳能电池基板; 形成在所述太阳能电池基板上的p型光吸收层; 形成在所述光吸收层上的n型缓冲层; 形成在所述缓冲层上的透明窗; 和形成在所述透明窗口上的上电极。

    Organic light emitting diode display and method of manufacturing the same
    14.
    发明授权
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US08455876B2

    公开(公告)日:2013-06-04

    申请号:US12805702

    申请日:2010-08-16

    IPC分类号: H01L33/16 H01L29/786

    摘要: An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.

    摘要翻译: 一种OLED显示器,包括:基板主体; 第一栅电极和第二半导体层; 在第一栅电极和第二半导体层上的栅极绝缘层; 分别覆盖所述第一栅电极和所述第二半导体层的第一半导体层和第二栅电极; 蚀刻阻挡层接触第一半导体层的部分; 在所述第一半导体层和所述第二栅电极上的层间绝缘层,并且包括分别暴露所述多个蚀刻停止层的接触孔; 层间绝缘层上的第一源电极和第一漏电极,并且所述接触孔经由所述蚀刻停止层间接地连接到所述第一半导体层,或者直接连接到所述第一半导体层; 并且所述层间绝缘层上的第二源极和第二漏极连接到所述第二半导体层。

    Thin Film Transistor, Method of Fabricating the Same and Organic Light Emitting Diode Display Device Having the Same
    17.
    发明申请
    Thin Film Transistor, Method of Fabricating the Same and Organic Light Emitting Diode Display Device Having the Same 有权
    薄膜晶体管,其制造方法和具有相同功能的有机发光二极管显示装置

    公开(公告)号:US20110207268A1

    公开(公告)日:2011-08-25

    申请号:US13100979

    申请日:2011-05-04

    IPC分类号: H01L21/336

    CPC分类号: H01L29/4908 H01L29/66757

    摘要: A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.

    摘要翻译: 具有改进的特性的薄膜晶体管,其制造方法和具有该薄膜晶体管的有机发光二极管(OLED)显示装置。 薄膜晶体管包括:衬底,设置在衬底上并包括沟道区的半导体层,以及源极和漏极区,掺杂有杂质的沟道区,设置在半导体层上的热氧化物层,设置有氮化硅层 在所述热氧化物层上,设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极,设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极 。

    Halftone mask and manufacturing method thereof and method for forming film using the same
    20.
    发明授权
    Halftone mask and manufacturing method thereof and method for forming film using the same 有权
    半色调掩模及其制造方法和使用其形成膜的方法

    公开(公告)号:US08367278B2

    公开(公告)日:2013-02-05

    申请号:US12824086

    申请日:2010-06-25

    IPC分类号: G03F1/32

    CPC分类号: G03F1/50

    摘要: Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.

    摘要翻译: 实施例涉及可以在彼此间隔开的两个区域中均匀地形成下层的高度的半色调掩模,其制造方法和使用其形成膜的方法。 半色调掩模包括第一遮光单元和第二遮光单元,以及邻近第二遮光单元的一侧设置的半透射单元。 第一和第二光阻挡单元阻挡光并以预定间隔彼此间隔开。 半透射单元位于远离第一遮光单元的一侧,并且减小光的强度。 第二遮光单元的第二长度和半透射单元的第三长度之和大于第一遮光单元的第一长度。