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公开(公告)号：US07141866B1
公开(公告)日：2006-11-28
申请号：US10826056
申请日：2004-04-16
Applicant: M. Saif Islam , Gun Young Jung , Yong Chen , R. Stanley Williams
Inventor： M. Saif Islam , Gun Young Jung , Yong Chen , R. Stanley Williams
IPC: H01L29/04 , H01L31/036
CPC classification number: H01L21/76838 , H01L21/0337
Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.
Abstract translation: 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。 该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。 使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。
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公开(公告)号：US20120243075A1
公开(公告)日：2012-09-27
申请号：US13486291
申请日：2012-06-01
Applicant: Shih-Yuan WANG , M. Saif ISLAM , Philip J. KUEKES , Nobuhiko KOBAYASHI
Inventor： Shih-Yuan WANG , M. Saif ISLAM , Philip J. KUEKES , Nobuhiko KOBAYASHI
CPC classification number: H01S5/341 , B82Y20/00 , H01L31/035281 , H01L31/09 , H01L31/1025 , H01S5/021 , H01S5/125 , H01S5/3412 , H01S5/4031 , H01S5/5018 , H01S5/5072 , H01S2301/14 , Y02E10/50 , Y10S977/762
Abstract: A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.
Abstract translation: 增益钳位半导体光放大器包括：至少一个第一表面; 至少一个第二表面，每个第二表面面对并与相应的第一表面电隔离; 多个纳米线以桥接形式连接每个相对的第一和第二表面对; 以及与纳米线重叠的信号波导，使得沿着信号波导传播的光信号通过由纳米线的电激励提供的能量被放大。
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13.发明申请METHOD AND APPARATUS FOR FABRICATING OPTOELECTROMECHANICAL DEVICES BY STRUCTURAL TRANSFER USING RE-USABLE SUBSTRATE 审中-公开通过使用可重复使用的基板的结构转移来制造光电器件的方法和装置公开(公告)号：US20110036396A1
公开(公告)日：2011-02-17
申请号：US12990481
申请日：2009-04-30
Applicant: Logeeswaran Veerayah Jayaraman , Aaron M. Katzenmeyer , M. Saif Islam
Inventor： Logeeswaran Veerayah Jayaraman , Aaron M. Katzenmeyer , M. Saif Islam
IPC: H01L31/0352 , H01L21/50 , H01L31/18
CPC classification number: H01L31/0352 , B82Y10/00 , H01L21/02603 , H01L21/02606 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/125
Abstract: One embodiment of the present invention provides a process for fabricating multiple devices on a single substrate based on a structure transfer process. During operation, the process starts by forming structures of multiple devices on a first substrate. The process then bonds the structures of the multiple devices onto a second substrate. Next, the process transfers the multiple devices from the first substrate onto the second substrate by fracturing the structures of the multiple devices off the first substrate, wherein the transferred devices preserve physical orientation and material properties of the said fabricated structures.
Abstract translation: 本发明的一个实施例提供了一种基于结构转移过程在单个衬底上制造多个器件的工艺。 在操作期间，该过程通过在第一衬底上形成多个器件的结构而开始。 然后，该过程将多个器件的结构粘合到第二衬底上。 接下来，该过程通过将多个器件的结构从第一衬底断开而将多个器件从第一衬底转移到第二衬底上，其中所转移的器件保持所述制造结构的物理取向和材料特性。
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公开(公告)号：US07692840B2
公开(公告)日：2010-04-06
申请号：US12156876
申请日：2008-06-04
Applicant: Philip J Kuekes , Shih-Yuan Wang , Raymond G Beausoleil , Alexandre M. Bratkovski , Wei Wu , M. Saif Islam
Inventor： Philip J Kuekes , Shih-Yuan Wang , Raymond G Beausoleil , Alexandre M. Bratkovski , Wei Wu , M. Saif Islam
CPC classification number: H01Q15/0086 , G02F1/0126 , G02F1/29 , H01Q3/44 , Y10T29/4902 , Y10T29/49798
Abstract: An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to a wavelength of the incident electromagnetic radiation. At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells is temporally controllable to allow temporal control of an associated effective refractive index encountered by the incident electromagnetic radiation while propagating through the composite material.
Abstract translation: 描述了一种用于控制入射电磁辐射传播的装置，其包括具有相对于入射电磁辐射的波长的小尺寸的电磁反应池的复合材料。 电磁反应池中的至少一个的电容和电感特性中的至少一个在时间上是可控制的，以允许在传播通过复合材料时临时控制由入射电磁辐射遇到的相关联的有效折射率。
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公开(公告)号：US07507293B2
公开(公告)日：2009-03-24
申请号：US11096669
申请日：2005-03-31
Applicant: Zhiyong Li , R. Stanley Williams , M. Saif Islam , Philip J. Kuekes
Inventor： Zhiyong Li , R. Stanley Williams , M. Saif Islam , Philip J. Kuekes
IPC: C30B25/02
CPC classification number: C30B11/12 , B82Y10/00 , B82Y30/00 , C30B11/00 , C30B29/605 , Y10S977/762 , Y10S977/813
Abstract: Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire material. Spaces between the nanowires are filled with a slab material, the patterned array of nanowires defining a patterned array of channels in the slab material. The nanowire material is then removed from the channels.
Abstract translation: 描述了光子晶体的制造。 形成纳米线的图案阵列，纳米线从表面向外延伸，纳米线包含催化生长的纳米线材料。 在纳米线之间的空间填充有板坯材料，图案化的纳米线阵列在板坯材料中限定了图案化的通道阵列。 然后从通道中除去纳米线材料。
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Patent Agency Ranking
公开(公告)号：US20080239462A1
公开(公告)日：2008-10-02
申请号：US12156876
申请日：2008-06-04
Applicant: Philip J. Kuekes , Shih-Yuan Wang , Raymond G. Beausoleil , Alexandre M. Bratkovski , Wei Wu , M. Saif Islam
Inventor： Philip J. Kuekes , Shih-Yuan Wang , Raymond G. Beausoleil , Alexandre M. Bratkovski , Wei Wu , M. Saif Islam
IPC: G02F1/29
CPC classification number: H01Q15/0086 , G02F1/0126 , G02F1/29 , H01Q3/44 , Y10T29/4902 , Y10T29/49798
Abstract: An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to a wavelength of the incident electromagnetic radiation. At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells is temporally controllable to allow temporal control of an associated effective refractive index encountered by the incident electromagnetic radiation while propagating through the composite material.
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公开(公告)号：US07368395B2
公开(公告)日：2008-05-06
申请号：US11601084
申请日：2006-11-16
Applicant: M. Saif Islam , Gun Young Jung , Yong Chen , R. Stanley Williams
Inventor： M. Saif Islam , Gun Young Jung , Yong Chen , R. Stanley Williams
IPC: H01L21/461
CPC classification number: H01L21/76838 , H01L21/0337
Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.
Abstract translation: 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。 该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。 使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。
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公开(公告)号：US07329115B2
公开(公告)日：2008-02-12
申请号：US11061226
申请日：2005-02-18
Applicant: Shih-Yuan Wang , M. Saif Islam
Inventor： Shih-Yuan Wang , M. Saif Islam
IPC: B29C59/00
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00
Abstract: A nanoimprint mold is described, comprising a plurality of alternating layers of distinct materials differentially etched along an edge thereof, said layers having spatially varying thicknesses along said edge such that nanolines patterned with said nanoimprint mold have corresponding spatially varying pitches.
Abstract translation: 描述了纳米压印模具，其包括沿其边缘差异蚀刻的多个不同材料的交替层，所述层沿着所述边缘具有空间变化的厚度，使得用所述纳米压印模具图案化的纳米线具有相应的空间变化的间距。
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公开(公告)号：US07289690B2
公开(公告)日：2007-10-30
申请号：US11107098
申请日：2005-04-15
Applicant: Zhiyong Li , Raymond G. Beausoleil , Philip J. Kuekes , Shih-Yuan Wang , M. Saif Islam
Inventor： Zhiyong Li , Raymond G. Beausoleil , Philip J. Kuekes , Shih-Yuan Wang , M. Saif Islam
IPC: G02B6/00
CPC classification number: G02B6/1225 , B82Y20/00 , G02B2006/1215
Abstract: An apparatus for sensing at least one property of a fluid is described. A first photonic crystal structure and a second photonic crystal structure are defined in a dielectric slab. The first and second photonic crystal structures comprise differently patterned arrays of channels extending through the dielectric slab. The apparatus further comprises a fluid introduction device configured to introduce a common volume of the fluid into the channels of the first and second photonic crystal structures. The at least one property of the fluid can be sensed by measuring the propagation of radiation through the first and second photonic crystal structures.
Abstract translation: 描述了用于感测流体的至少一个性质的装置。 在介质板中限定第一光子晶体结构和第二光子晶体结构。 第一和第二光子晶体结构包括延伸穿过电介质板的不同图案的通道阵列。 该装置还包括流体引入装置，其构造成将共同体积的流体引入第一和第二光子晶体结构的通道中。 可以通过测量通过第一和第二光子晶体结构的辐射的传播来感测流体的至少一个性质。
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公开(公告)号：US07151599B2
公开(公告)日：2006-12-19
申请号：US11044421
申请日：2005-01-27
Applicant: M. Saif Islam , Shih-Yuan Wang , Wei Wu , Zhiyong Li , R. Stanley Williams
Inventor： M. Saif Islam , Shih-Yuan Wang , Wei Wu , Zhiyong Li , R. Stanley Williams
CPC classification number: G01N21/658 , G01N2201/0873
Abstract: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.
Abstract translation: 公开了用于增强拉曼光谱和超拉曼的装置，系统和方法。 用于执行拉曼光谱的分子分析装置包括设置在基板上的基板和激光源。 激光源可以被配置为发射激光辐射，其可照射设置在拉曼增强结构上的分析物。 拉曼增强结构可以设置在波导中。 该分子分析装置还包括布置在基板上的波长解复用器和辐射传感器，并且被配置为用于接收可以通过分析物的照射和拉曼增强结构产生的拉曼散射辐射。
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