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    Nano-VCSEL device and fabrication thereof using nano-colonnades
    3.
    发明授权
    Nano-VCSEL device and fabrication thereof using nano-colonnades 有权
    纳米VCSEL器件及其制造使用纳米柱廊

    公开(公告)号：US07400665B2

    公开(公告)日：2008-07-15

    申请号：US11084886

    申请日：2005-03-21

    Applicant: Shih-Yuan Wang ,  M. Saif Islam ,  Raymond G. Beausoleil

    Inventor： Shih-Yuan Wang ,  M. Saif Islam ,  Raymond G. Beausoleil

    IPC: H01S5/183

    CPC classification number: H01S5/183 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01S5/026 ,  H01S5/041 ,  H01S5/18341 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  H01S5/423 ,  Y10S977/951

    Abstract: A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a second layer; and an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that a horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The VCSEL device further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, and distributed Bragg mirrors adjacent to opposite end of the nanowire column.

    Abstract translation: 纳米柱廊VCSEL器件和制造方法利用从第一层的（111）水平表面到第二层的另一水平表面几乎垂直地生长的纳米线柱，以连接这些层。 VCSEL器件包括具有（111）水平表面的第一层; 第二层; 以及在第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。 第二层的一部分伸出绝缘体支撑件，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面向第一层的（111）水平表面。 VCSEL器件还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线柱，以及与纳米线列的相对端相邻的分布式布拉格反射镜。

    Utilizing nanowire for generating white light
    5.
    发明授权
    Utilizing nanowire for generating white light 有权
    利用纳米线产生白光

    公开(公告)号：US08188494B2

    公开(公告)日：2012-05-29

    申请号：US11477298

    申请日：2006-06-28

    Applicant: Nobuhiko P. Kobayashi ,  Shih-Yuan Wang ,  M. Saif Islam

    Inventor： Nobuhiko P. Kobayashi ,  Shih-Yuan Wang ,  M. Saif Islam

    IPC: H01L33/00 ,  H01L21/00

    CPC classification number: H01L33/502 ,  B82Y20/00

    Abstract: One embodiment in accordance with the invention is an apparatus that can include a light emitting diode that is for of outputting light in the blue wavelength. Furthermore, the apparatus can also include a nanowire or nanoparticle coupled to a surface of the light emitting diode. Additionally, the apparatus can include an electrode coupled to the light emitting diode, wherein the nanowire or nanoparticle is for receiving and converting the light into red and green light that is output from the nanowire or nanoparticle.

    Abstract translation: 根据本发明的一个实施例是可以包括用于输出蓝色波长的光的发光二极管的装置。 此外，该装置还可以包括耦合到发光二极管的表面的纳米线或纳米颗粒。 此外，该装置可以包括耦合到发光二极管的电极，其中纳米线或纳米颗粒用于接收并将光转换成从纳米线或纳米颗粒输出的红色和绿色光。

    Fabricating arrays of metallic nanostructures
    7.
    发明授权
    Fabricating arrays of metallic nanostructures 失效
    制造金属纳米结构阵列

    公开(公告)号：US07989798B2

    公开(公告)日：2011-08-02

    申请号：US12509689

    申请日：2009-07-27

    Applicant: Philip J Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski

    Inventor： Philip J Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski

    IPC: H01L29/06

    CPC classification number: G02B6/107 ,  B82Y30/00 ,  Y10S977/712 ,  Y10S977/762 ,  Y10T29/41

    Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.

    Abstract translation: 描述了金属纳米结构的图案阵列及其制造。 一种器件包括从衬底垂直延伸的金属柱的图案化阵列。 根据纳米压印方法，通过在其上放置的种子点的预定横向图案上，从衬底催化生长的非金属纳米线阵列之一金属地涂覆每个金属柱。 还描述了用于制造金属纳米结构的图案化阵列的装置。

    Fabricating arrays of metallic nanostructures
    8.
    发明授权
    Fabricating arrays of metallic nanostructures 失效
    制造金属纳米结构阵列

    公开(公告)号：US07592255B2

    公开(公告)日：2009-09-22

    申请号：US11021615

    申请日：2004-12-22

    Applicant: Philip J Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski

    Inventor： Philip J Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovski

    IPC: H01L21/44

    CPC classification number: G02B6/107 ,  B82Y30/00 ,  Y10S977/712 ,  Y10S977/762 ,  Y10T29/41

    Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A plurality of nanowires is grown on a substrate, the plurality of nanowires being laterally arranged on the substrate in a predetermined array pattern. The plurality of nanowires is coated with a metal to generate a plurality of metal-coated nanowires. Vacancies between the metal-coated nanowires are filled in with a sacrificial material for stabilization, and the metal-coated nanowires are planarized. The sacrificial material is removed, the patterned array of metallic nanostructures being formed by the plurality of planarized metal-coated nanowires.

    Abstract translation: 描述了金属纳米结构的图案阵列及其制造。 多个纳米线在衬底上生长，多个纳米线以预定的阵列图案横向布置在衬底上。 多个纳米线被涂覆有金属以产生多个金属涂覆的纳米线。 金属涂覆的纳米线之间的空位填充有用于稳定化的牺牲材料，并且金属涂覆的纳米线被平坦化。 去除牺牲材料，金属纳米结构的图案化阵列由多个平坦化的金属涂覆的纳米线形成。

    Methods of bridging lateral nanowires and device using same
    9.
    发明授权
    Methods of bridging lateral nanowires and device using same 失效
    桥接横向纳米线的方法及其使用方法

    公开(公告)号：US07208094B2

    公开(公告)日：2007-04-24

    申请号：US10738176

    申请日：2003-12-17

    Applicant: M. Saif Islam ,  Theodore I. Kamins ,  Shashank Sharma

    Inventor： M. Saif Islam ,  Theodore I. Kamins ,  Shashank Sharma

    IPC: C23F1/00 ,  H01L21/00

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01L21/76838 ,  H01L23/53271 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/721 ,  Y10S977/742 ,  H01L2924/00

    Abstract: A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

    Abstract translation: 半导体纳米线横向生长。 生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。 横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。 连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。 桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。 自组装纳米线的方法在激活的电极对之间桥接纳米线。 控制纳米线生长的方法在垂直表面形成表面不规则性。 电子设备包括横向生长的纳米级互连。

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