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公开(公告)号：US20120315762A1
公开(公告)日：2012-12-13
申请号：US13315143
申请日：2011-12-08
IPC分类号： H01L21/306
CPC分类号： H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
摘要： The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminium to form aluminium gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminium gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
摘要翻译： 本发明公开了半导体器件的制造方法。 在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，铝浇口的暴露表面用H 2 O 2溶液氧化以形成氧化铝膜，并且清洁半导体器件。
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公开(公告)号：US20120205336A1
公开(公告)日：2012-08-16
申请号：US13318281
申请日：2011-06-27
申请人： Fenglin Han , Mingqi Li
发明人： Fenglin Han , Mingqi Li
IPC分类号： B66C23/64
CPC分类号： B66C23/70
摘要： The present invention relates to a crane jib transition structure, mainly including a jib section, a transition section and a supporting structure, wherein, said jib section matches with said transition section, and they fixedly connect to each other, the upper end of said supporting structure fixedly connects to the upper end of the side of said jib section, the bottom end of said supporting structure fixedly connects to the bottom end of the corresponding side of the transition section, the middle part of said supporting structure fixedly connects to the connection point between the side of jib section and the corresponding side of transition section. Therefore, the crane jib transition structure of the present invention can not only achieve the strength of a crane jib transition structure, but also achieve the strength and the overall stability of a crane jib, by using a supporting structure connecting to between the crane jib section and transition section, which have simpler structure, easier installation, lower production cost and can be widely used in various types of cranes.
摘要翻译： 本发明涉及一种主要包括起重臂部分，过渡部分和支撑结构的起重机起重臂过渡结构，其中，所述起重段与所述过渡部分相配合，并且它们彼此固定连接，所述支撑件的上端 结构固定地连接到所述起重臂部分的侧面的上端，所述支撑结构的底端固定地连接到过渡部分的相应侧的底端，所述支撑结构的中间部分固定地连接到连接点 在悬臂部分的侧面和过渡部分的相应侧之间。 因此，本发明的起重臂起重臂过渡结构不仅可以实现起重臂起重臂过渡结构的强度，而且可以通过使用连接在起重臂悬臂部分之间的支撑结构来实现起重机吊臂的强度和整体稳定性 过渡段，结构简单，安装方便，生产成本低，可广泛应用于各种起重机。
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公开(公告)号：US20120164922A1
公开(公告)日：2012-06-28
申请号：US13163667
申请日：2011-06-17
IPC分类号： B24B53/00
CPC分类号： B24B53/017
摘要： A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
摘要翻译： 一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。 在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。
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14.发明申请公开(公告)号：US20120156595A1
公开(公告)日：2012-06-21
申请号：US13297261
申请日：2011-11-15
申请人： Joon-Seok OH , Deyan WANG , Cong LIU , Mingqi LI , Chunyi WU , Cheng-Bai XU
发明人： Joon-Seok OH , Deyan WANG , Cong LIU , Mingqi LI , Chunyi WU , Cheng-Bai XU
CPC分类号： G03F7/0392 , G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sugar substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种具有糖替代的材料。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。
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公开(公告)号：US20120142150A1
公开(公告)日：2012-06-07
申请号：US13176678
申请日：2011-07-05
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/31053 , H01L29/6653 , H01L29/7833
摘要： The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.
摘要翻译： 本发明提供一种用于形成金属栅极的方法和用于形成MOS晶体管的方法。 形成金属栅极的方法包括：提供基板; 在所述基板上形成牺牲氧化物层和多晶硅栅极; 在所述牺牲氧化物层和所述多晶硅栅极的侧壁上形成氧化硅层; 形成覆盖所述基板的停止层; 去除隔离物中的一部分停止层; 形成覆盖所述第一层间电介质层，所述间隔物和所述多晶硅栅极的第二层间电介质层; 抛光所述第二层间电介质层以暴露所述间隔物和所述多晶硅栅极; 去除多晶硅栅极以形成沟槽; 去除沟槽中的牺牲氧化物层; 并在沟槽中形成金属栅极。 本发明防止了凹槽中的金属桥和凹陷中的金属残留物。
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公开(公告)号：US20110284490A1
公开(公告)日：2011-11-24
申请号：US12893787
申请日：2010-09-29
申请人： Jinjiang LIU , Mingqi LI , Jianguo LIAO , Yuquan LIU , Guowei YU , Zhengmao SUN
发明人： Jinjiang LIU , Mingqi LI , Jianguo LIAO , Yuquan LIU , Guowei YU , Zhengmao SUN
IPC分类号： B66C23/64
CPC分类号： B66C23/70
摘要： The present invention provides a crane boom with multi main chord consisting of an underpart boom sections, an insert jib section and a boom head connected in turn. Said underpart boom sections and insert jib section are multi-main-chord boom sections, there is a main-chord on each of the angle part of the cross-section of the multi-main-chord boom section. Said main-chords are connected one another by several belly bars. Add at least one main-chord on the angle part of the cross section along the width or the height of said multi-main-chord boom, and the added main-chord parallels to the original main-chord. The crane boom with multi main chord of the present invention, without changing the size of the boom sections during transporting, the cross-sectional area of the main-chord is increased and the integral stiffness of the boom is strengthened by increasing main-chord number of boom, thus fold increasing the structural carrying capacity of the boom which is suitable for large crane.
摘要翻译： 本发明提供了一种具有多个主弦的起重机吊臂，其由下部悬臂部分，插入臂部分和悬臂头组成。 所述底部臂部和插入臂部分是多主弦臂部分，多主弦杆部分的横截面的每个角部分上都有一个主弦。 所述主弦通过几个腹部条连接。 沿着所述多主弦杆的宽度或高度在横截面的角部上添加至少一个主弦，并且所添加的主弦与原始主弦平行。 本发明的具有多主弦的起重机吊臂在运输期间不改变起重臂部分的尺寸，主弦的横截面面积增加，并且通过增加主弦数量来增强悬臂的整体刚度 从而使适用于大型起重机的起重臂的结构承载能力增加。
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公开(公告)号：US09720321B2
公开(公告)日：2017-08-01
申请号：US13297031
申请日：2011-11-15
申请人： Emad Aqad , Mingqi Li , Cheng-Bai Xu , Cong Liu
发明人： Emad Aqad , Mingqi Li , Cheng-Bai Xu , Cong Liu
IPC分类号： G03F7/004 , C07D493/08 , G03F7/039
CPC分类号： G03F7/0045 , C07D493/08 , G03F7/0046 , G03F7/0397
摘要： New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise each PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic device.
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公开(公告)号：US09507259B2
公开(公告)日：2016-11-29
申请号：US13482595
申请日：2012-05-29
申请人： Mingqi Li , Emad Aqad , Cong Liu , Ching-Lung Chen , Shintaro Yamada , Cheng-bai Xu , Joseph Mattia
发明人： Mingqi Li , Emad Aqad , Cong Liu , Ching-Lung Chen , Shintaro Yamada , Cheng-bai Xu , Joseph Mattia
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0397
摘要： A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.
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公开(公告)号：US08808063B2
公开(公告)日：2014-08-19
申请号：US13308526
申请日：2011-11-30
IPC分类号： B24B21/18
CPC分类号： B24B53/001 , B24B37/04 , B24B37/046 , B24B53/017 , C25D17/001 , H01L21/02074 , H01L21/304 , H01L21/67051
摘要： A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.
摘要翻译： 提供了去除抛光副产物的方法和抛光装置。 该方法包括将正极安装在研磨台板的中心和负极上，在研磨台板的边缘上，在金属抛光处理完成之后，在正极和负极之间施加电压，并旋转抛光 压板并用去离子水或化学清洁溶液冲洗抛光垫以除去在抛光过程中形成的抛光副产物。 离心力和电动势的组合增加了抛光副产物的去除率。
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公开(公告)号：US08748279B2
公开(公告)日：2014-06-10
申请号：US13323489
申请日：2011-12-12
IPC分类号： H01L21/336 , H01L21/00
CPC分类号： H01L21/28123
摘要： The present invention discloses a method of manufacturing semiconductor devices. The method includes a step of performing a chemical mechanical planarization processing on a poly-silicon layer before fabricating a poly-silicon gate such that the poly-silicon gates obtained in subsequent fabrication process are kept at the same height, which thus avoids the silicon nitride residues issue that occurs in the prior art. Therefore, the present invention is capable of enhancing product yield of semiconductor devices and improving device performances.
摘要翻译： 本发明公开了半导体器件的制造方法。 该方法包括在制造多晶硅栅极之前对多晶硅层进行化学机械平面化处理的步骤，使得在随后的制造工艺中获得的多晶硅栅极保持在相同的高度，从而避免了氮化硅 在现有技术中发生的残留问题。 因此，本发明能够提高半导体器件的产量，提高器件性能。
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